摘要:
A solid-state image pickup apparatus (100) according to the present invention in which a first substrate (104) including a photoelectric conversion element (112) and a gate electrode (114) of a transistor, and a second substrate (108) including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer. By such a structure, using a simple structure, it becomes possible for a transistor at the peripheral circuit portion to operate at a higher speed, and a signal readout operation to be performed at a high speed while suppressing a reduction in the characteristics of the photoelectric conversion element.
摘要:
An image capturing apparatus includes a plurality of pixels arranged on a substrate, a temperature signal output unit arranged on the substrate and configured to output a temperature signal representing a temperature, and a reference signal output unit arranged on the substrate and configured to output a reference signal used to correct the temperature signal. The temperature signal output unit and the reference signal output unit are arranged in regions different from each other on the substrate.
摘要:
An image capturing apparatus includes a plurality of pixels arranged on a substrate, a temperature signal output unit arranged on the substrate and configured to output a temperature signal representing a temperature, and a reference signal output unit arranged on the substrate and configured to output a reference signal used to correct the temperature signal. The temperature signal output unit and the reference signal output unit are arranged in regions different from each other on the substrate.
摘要:
In a solid-state imaging device, a photoelectric conversion unit, a transfer transistor, and at least a part of electric charge holding unit, among pixel constituent elements, are disposed on a first semiconductor substrate. An amplifying transistor, a signal processing circuit other than a reset transistor, and a plurality of common output lines, to which signals are read out from a plurality of pixels, are disposed on a second semiconductor substrate.
摘要:
A solid-state imaging device includes a first detection pixel and a second detection pixel, each of the first detection pixel and the second detection pixel including a transfer transistor and an amplifier transistor connected to the transfer transistor via a first node, a voltage supply means that supplies a predetermined voltage, and a connection switch connected between the voltage supply means and a second node at which the transfer transistor of the first detection pixel and the transfer transistor of the second detection pixel are connected.
摘要:
A solid-state image pickup apparatus (100) according to the present invention in which a first substrate (104) including a photoelectric conversion element (112) and a gate electrode (114) of a transistor, and a second substrate (108) including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer (130). By such a structure, using a simple structure, it becomes possible for a transistor at the peripheral circuit portion to operate at a higher speed, and a signal readout operation to be performed at a high speed while suppressing a reduction in the characteristics of the photoelectric conversion element.
摘要:
An image capturing apparatus includes a plurality of pixels arranged on a substrate, a temperature signal output unit arranged on the substrate and configured to output a temperature signal representing a temperature, and a reference signal output unit arranged on the substrate and configured to output a reference signal used to correct the temperature signal. The temperature signal output unit and the reference signal output unit are arranged in regions different from each other on the substrate.