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公开(公告)号：EP3514831A3
公开(公告)日：2019-11-06
申请号：EP19155743.8
申请日：2009-12-26
IPC分类号： H01L27/146 , H04N5/335 , H04N5/374
摘要： A solid-state image pickup apparatus (100) according to the present invention in which a first substrate (104) including a photoelectric conversion element (112) and a gate electrode (114) of a transistor, and a second substrate (108) including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer. By such a structure, using a simple structure, it becomes possible for a transistor at the peripheral circuit portion to operate at a higher speed, and a signal readout operation to be performed at a high speed while suppressing a reduction in the characteristics of the photoelectric conversion element.
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公开(公告)号：EP2517248B1
公开(公告)日：2015-02-25
申请号：EP10807492.3
申请日：2010-12-22
IPC分类号： H01L27/146
CPC分类号： H01L27/14636 , H01L27/14632 , H01L27/14643 , H01L27/1465
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公开(公告)号：EP2518768B1
公开(公告)日：2019-03-20
申请号：EP09852595.9
申请日：2009-12-26
IPC分类号： H01L27/146 , H04N5/335 , H04N5/374
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公开(公告)号：EP2622637B1
公开(公告)日：2015-11-18
申请号：EP11828348.0
申请日：2011-09-20
IPC分类号： H04N5/335 , H01L27/146 , H04N5/3745 , H04N5/355
CPC分类号： H01L27/14623 , H01L27/14607 , H01L27/1463 , H01L27/14634 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/148 , H04N5/3559 , H04N5/372 , H04N5/37452 , H04N5/37455 , H04N5/378
摘要： In a solid-state imaging device, a photoelectric conversion unit, a transfer transistor, and at least a part of electric charge holding unit, among pixel constituent elements, are disposed on a first semiconductor substrate. An amplifying transistor, a signal processing circuit other than a reset transistor, and a plurality of common output lines, to which signals are read out from a plurality of pixels, are disposed on a second semiconductor substrate.
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公开(公告)号：EP3955303A2
公开(公告)日：2022-02-16
申请号：EP21194983.9
申请日：2009-12-26
IPC分类号： H01L27/146 , H04N5/335 , H04N5/374
摘要： A solid-state image pickup apparatus (100) according to the present invention in which a first substrate (104) including a photoelectric conversion element (112) and a gate electrode (114) of a transistor, and a second substrate (108) including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer (130). By such a structure, using a simple structure, it becomes possible for a transistor at the peripheral circuit portion to operate at a higher speed, and a signal readout operation to be performed at a high speed while suppressing a reduction in the characteristics of the photoelectric conversion element.
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公开(公告)号：EP3514831A2
公开(公告)日：2019-07-24
申请号：EP19155743.8
申请日：2009-12-26
IPC分类号： H01L27/146 , H04N5/335 , H04N5/374
摘要： A solid-state image pickup apparatus (100) according to the present invention in which a first substrate (104) including a photoelectric conversion element (112) and a gate electrode (114) of a transistor, and a second substrate (108) including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer. By such a structure, using a simple structure, it becomes possible for a transistor at the peripheral circuit portion to operate at a higher speed, and a signal readout operation to be performed at a high speed while suppressing a reduction in the characteristics of the photoelectric conversion element.
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公开(公告)号：EP2517248A1
公开(公告)日：2012-10-31
申请号：EP10807492.3
申请日：2010-12-22
IPC分类号： H01L27/146
CPC分类号： H01L27/14636 , H01L27/14632 , H01L27/14643 , H01L27/1465
摘要： The present invention relates to a solid-state image pickup device. The device includes a first substrate including a photoelectric conversion element and a transfer gate electrode configured to transfer charge from the photoelectric conversion element, a second substrate having a peripheral circuit portion including a circuit configured to read a signal based charge generated in the photoelectric conversion element, the first and second substrates being laminated. The device further includes a multilayer interconnect structure, disposed on the first substrate, including an aluminum interconnect and a multilayer interconnect structure, disposed on the second substrate, including a copper interconnect.
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公开(公告)号：EP3955303A3
公开(公告)日：2022-05-11
申请号：EP21194983.9
申请日：2009-12-26
IPC分类号： H01L27/146 , H04N5/335 , H04N5/374
摘要： A solid-state image pickup apparatus (100) according to the present invention in which a first substrate (104) including a photoelectric conversion element (112) and a gate electrode (114) of a transistor, and a second substrate (108) including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer (130). By such a structure, using a simple structure, it becomes possible for a transistor at the peripheral circuit portion to operate at a higher speed, and a signal readout operation to be performed at a high speed while suppressing a reduction in the characteristics of the photoelectric conversion element.
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公开(公告)号：EP3477703A1
公开(公告)日：2019-05-01
申请号：EP18201016.5
申请日：2018-10-17
发明人： ENDO, Nobuyuki
IPC分类号： H01L27/146
摘要： A photoelectric conversion device (AP) comprises a semiconductor substrate (SUB) including a photoelectric conversion portion, a silicon oxide film (116) arranged above the photoelectric conversion portion, and an insulating film (106) arranged between the photoelectric conversion portion and the silicon oxide film. An n-type first impurity region (104) constituting part of the photoelectric conversion portion and a p-type second impurity region (112) arranged between the insulating film and the first impurity region are provided in the semiconductor substrate. A portion of the insulating film above the second impurity region, and the second impurity region contain boron. An integrated value of a boron concentration from the surface of the semiconductor substrate to a first position where a boron concentration takes a minimal value in the second impurity region is larger than that from the surface of the semiconductor substrate to an upper surface of the silicon oxide film.
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公开(公告)号：EP2622637A1
公开(公告)日：2013-08-07
申请号：EP11828348.0
申请日：2011-09-20
IPC分类号： H01L27/146 , H01L27/14 , H04N5/3745
CPC分类号： H01L27/14623 , H01L27/14607 , H01L27/1463 , H01L27/14634 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/148 , H04N5/3559 , H04N5/372 , H04N5/37452 , H04N5/37455 , H04N5/378
摘要： In a solid-state imaging device, a photoelectric conversion unit, a transfer transistor, and at least a part of electric charge holding unit, among pixel constituent elements, are disposed on a first semiconductor substrate. An amplifying transistor, a signal processing circuit other than a reset transistor, and a plurality of common output lines, to which signals are read out from a plurality of pixels, are disposed on a second semiconductor substrate.
摘要翻译： 在固态成像装置中，像素构成元件中的光电转换单元，转移晶体管和电荷保持单元的至少一部分设置在第一半导体基板上。 在第二半导体衬底上设置放大晶体管，除复位晶体管以外的信号处理电路以及从多个像素读出信号的多个公共输出线。
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