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公开(公告)号：EP4000089A1
公开(公告)日：2022-05-25
申请号：EP20742716.2
申请日：2020-07-16
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公开(公告)号：EP3323153B1
公开(公告)日：2020-09-02
申请号：EP16738445.2
申请日：2016-07-13
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公开(公告)号：EP3329509A1
公开(公告)日：2018-06-06
申请号：EP16754215.8
申请日：2016-08-01
发明人： KIM, Dong-Chul , HØIAAS, Ida Marie , MUNSHI, Mazid , FIMLAND, Bjørn Ove , WEMAN, Helge , REN, Dingding , DHEERAJ, Dasa
IPC分类号： H01L21/20
CPC分类号： H01L21/0262 , H01L21/02376 , H01L21/02458 , H01L21/02538 , H01L21/0254 , H01L21/02603 , H01L21/02631 , H01L21/02639
摘要： A process for growing nanowires or nanopyramids comprising: (I) providing a graphitic substrate and depositing AlGaN, InGaN, AlN or AlGa(In)N on said graphitic substrate at an elevated temperature to form a buffer layer or nanoscale nucleation islands of said compounds; (II) growing a plurality of semiconducting group III-V nanowires or nanopyramids, preferably III-nitride nanowires or nanopyramids, on the said buffer layer or nucleation islands on the graphitic substrate, preferably via MOVPE or MBE.
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公开(公告)号：EP3850676A1
公开(公告)日：2021-07-21
申请号：EP19769421.9
申请日：2019-09-10
申请人： Crayonano AS
发明人： MUNSHI, Mazid , WEMAN, Helge , FIMLAND, Bjørn-Ove
IPC分类号： H01L33/32 , H01L33/10 , H01L33/14 , H01L33/16 , H01L33/42 , H01L33/44 , H01L31/0304 , H01L31/0352 , H01L31/109 , H01S5/343 , H01S5/183 , H01S5/042 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/40 , H01L33/46 , H01L31/0224
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公开(公告)号：EP3323153A1
公开(公告)日：2018-05-23
申请号：EP16738445.2
申请日：2016-07-13
发明人： KIM, Dong Chul , HØIAAS, Ida Marie E , HEIMDAL, Carl Philip J. , FIMLAND, Bjørn Ove M. , WEMAN, Helge
摘要： A composition of matter comprising: a graphitic substrate optionally carried on a support, a seed layer having a thickness of no more than 50 nm deposited directly on top of said substrate, opposite any support; and an oxide or nitride masking layer e directly on top of said seed layer; wherein a plurality of holes are present through said seed layer and through said masking layer to C said graphitic substrate; and wherein a plurality of nanowires or nanopyramids are grown from said substrate in said holes, said nanowres or nanopyramids comprising at least one semiconducting group III-V compound.
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公开(公告)号：EP3323152A1
公开(公告)日：2018-05-23
申请号：EP16738444.5
申请日：2016-07-13
CPC分类号： H01L33/08 , H01L31/035227 , H01L31/1035 , H01L31/105 , H01L31/184 , H01L31/1852 , H01L33/06 , H01L33/18 , H01L33/24 , H01L33/325
摘要： A light emitting diode device comprising: a plurality of nanowires or nanopyramids grown on a graphitic substrate, said nanowires or nanopyramids having a p-n or p-i-n junction, a first electrode in electrical contact with said graphitic substrate; a light reflective layer in contact with the top of at least a portion of said nanowires or nanopyramids, said light reflective layer optionally acting as a second electrode; optionally a second electrode in electrical contact with the top of at least a portion of said nanowires or nanopyramids, said second electrode being essential where said light reflective layer does not act as an electrode; wherein said nanowires or nanopyramids comprise at least one group III-V compound semiconductor; and wherein in use light is emitted from said device in a direction substantially opposite to said light reflective layer.
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