公开(公告)号：EP0181113A2

公开(公告)日：1986-05-14

申请号：EP85307589.3

申请日：1985-10-21

申请人： ENERGY CONVERSION DEVICES, INC.

发明人： Yang, Chi Chung ,  Mohr, Ralph ,  Hudgens, Stephen ,  Johncock, Annette ,  Nath, Prem

IPC分类号： H01L21/205 ,  H01L31/02 ,  G03G5/04

CPC分类号： H01L31/206 ,  G03G5/08264 ,  G03G5/08278 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： An improved p-type semiconductor alloy film, improved photovoltaic and photoresponsive devices incorporating such films and radio frequency and microwave glow discharge methods for fabricating same. The improved semiconductor alloy films preferably include at least silicon deposited by the glow discharge of a compound containing at least silicon and a boron species that remains substantially mono-atomic as it is incorporated into the silicon matrix. The p-type film is particularly stable, is characterized by a non-narrowed band gap, reduced bulk stress, improved morphology, growth and adhesion and reduced peeling and cracking. The substantially intrinsic film is characterized by substantially reduced Staebler-Wronski degradation. The method includes the novel step of introducing a boron species that does not form higher order boron hydrides or other boron polymers or oligomers in a glow discharge plasma.

公开(公告)号：EP0122778B1

公开(公告)日：1991-11-21

申请号：EP84302498.5

申请日：1984-04-12

申请人： ENERGY CONVERSION DEVICES, INC.

发明人： Mohr, Ralph ,  Cannella, Vincent D.

IPC分类号： H01L31/072 ,  H01L31/0376 ,  H01L29/04

CPC分类号： H01L31/076 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

公开(公告)号：EP0122778A3

公开(公告)日：1986-06-04

申请号：EP84302498

申请日：1984-04-12

申请人： ENERGY CONVERSION DEVICES, INC.

发明人： Mohr, Ralph ,  Cannella, Vincent D.

IPC分类号： H01L31/06 ,  H01L31/02 ,  H01L29/04

CPC分类号： H01L31/076 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： The open circuit voltage and efficiency of photovoltaic devices formed from multiple regions of semiconductor alloys including at least one narrow band gap semiconductor alloy are enhanced. The device (80) includes a pair of doped region (88) and an intrinsic body (90) between the doped regions. The intrinsic body includes a first intrinsic region (90a) and an open circuit voltage (Voc) enhancement means including a second intrinsic region (90b). The second intrinsic region has a wider band gap than the band gap of the first intrinsic region and is disposed between the first intrinsic region and one of the doped regions. The open circuit enhancement means can also include a third intrinsic region also having a wider band gap than the first intrinsic region and disposed on the side of the first intrinsic region opposite the second intrinsic region.

公开(公告)号：EP0122778A2

公开(公告)日：1984-10-24

申请号：EP84302498.5

申请日：1984-04-12

申请人： ENERGY CONVERSION DEVICES, INC.

发明人： Mohr, Ralph ,  Cannella, Vincent D.

IPC分类号： H01L31/072 ,  H01L31/0376 ,  H01L29/04

CPC分类号： H01L31/076 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： The open circuit voltage and efficiency of photovoltaic devices formed from multiple regions of semiconductor alloys including at least one narrow band gap semiconductor alloy are enhanced. The device (80) includes a pair of doped region (88) and an intrinsic body (90) between the doped regions. The intrinsic body includes a first intrinsic region (90a) and an open circuit voltage (Voc) enhancement means including a second intrinsic region (90b). The second intrinsic region has a wider band gap than the band gap of the first intrinsic region and is disposed between the first intrinsic region and one of the doped regions. The open circuit enhancement means can also include a third intrinsic region also having a wider band gap than the first intrinsic region and disposed on the side of the first intrinsic region opposite the second intrinsic region.