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19 条记录 (耗时 0.014 秒)

    Liquid crystal displays operated by amorphous silicon alloy diodes
    3.
    发明公开
    Liquid crystal displays operated by amorphous silicon alloy diodes 失效
    液晶显示器由非晶硅合金二极管操作

    公开(公告)号：EP0150798A3

    公开(公告)日：1986-01-02

    申请号：EP85100630

    申请日：1985-01-22

    申请人： ENERGY CONVERSION DEVICES, INC.

    发明人： Yaniv, Zvi ,  Cannella, Vincent D. ,  Hansell, Gregory L. ,  Swartz, Louis D.

    IPC分类号： G09F09/30 ,  G09F09/35 ,  G09G03/36

    CPC分类号： G02F1/1365 ,  G02F2202/103

    摘要： There are disclosed liquid crystal displays (140, 200, 250) each having at least one pixel element formed on a insulative substrate (144, 150, 204, 212, 212a) including at least two conductive electrodes (146, 152; 206, 214; and 258, 260) and liquid crystal display material (148, 210, 262) disposed between the electrodes. The pixel elements further include at least a pair of isolation devices (158, 166; 219, 233; and 264, 266) formed from a deposited semiconductor material which facilitates selective excitation of the pixel elements and applied potential reversal across the electrodes during alternate display frames. The isolation devices can include a plurality of series connected diodes (268 through 278). The isolation devices can be formed as diode rings (256). A method of making the displays is also disclosed.

    Narrow band gap photovoltaic devices with enhanced open circuit voltage
    5.
    发明公开
    Narrow band gap photovoltaic devices with enhanced open circuit voltage 失效
    具有增强开路电压的窄带宽带光伏器件

    公开(公告)号：EP0122778A3

    公开(公告)日：1986-06-04

    申请号：EP84302498

    申请日：1984-04-12

    申请人： ENERGY CONVERSION DEVICES, INC.

    发明人： Mohr, Ralph ,  Cannella, Vincent D.

    IPC分类号： H01L31/06 ,  H01L31/02 ,  H01L29/04

    CPC分类号： H01L31/076 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

    摘要： The open circuit voltage and efficiency of photovoltaic devices formed from multiple regions of semiconductor alloys including at least one narrow band gap semiconductor alloy are enhanced. The device (80) includes a pair of doped region (88) and an intrinsic body (90) between the doped regions. The intrinsic body includes a first intrinsic region (90a) and an open circuit voltage (Voc) enhancement means including a second intrinsic region (90b). The second intrinsic region has a wider band gap than the band gap of the first intrinsic region and is disposed between the first intrinsic region and one of the doped regions. The open circuit enhancement means can also include a third intrinsic region also having a wider band gap than the first intrinsic region and disposed on the side of the first intrinsic region opposite the second intrinsic region.

    Narrow band gap photovoltaic devices with enhanced open circuit voltage
    6.
    发明公开
    Narrow band gap photovoltaic devices with enhanced open circuit voltage 失效
    具有增加的开路电压的窄禁区的光伏器件。

    公开(公告)号：EP0122778A2

    公开(公告)日：1984-10-24

    申请号：EP84302498.5

    申请日：1984-04-12

    申请人： ENERGY CONVERSION DEVICES, INC.

    发明人： Mohr, Ralph ,  Cannella, Vincent D.

    IPC分类号： H01L31/072 ,  H01L31/0376 ,  H01L29/04

    CPC分类号： H01L31/076 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

    摘要： The open circuit voltage and efficiency of photovoltaic devices formed from multiple regions of semiconductor alloys including at least one narrow band gap semiconductor alloy are enhanced. The device (80) includes a pair of doped region (88) and an intrinsic body (90) between the doped regions. The intrinsic body includes a first intrinsic region (90a) and an open circuit voltage (Voc) enhancement means including a second intrinsic region (90b). The second intrinsic region has a wider band gap than the band gap of the first intrinsic region and is disposed between the first intrinsic region and one of the doped regions. The open circuit enhancement means can also include a third intrinsic region also having a wider band gap than the first intrinsic region and disposed on the side of the first intrinsic region opposite the second intrinsic region.

    Plasma deposition of amorphous materials
    7.
    发明公开
    Plasma deposition of amorphous materials 失效
    通过等离子体的手段沉积非晶材料。

    公开(公告)号：EP0060625A2

    公开(公告)日：1982-09-22

    申请号：EP82300917.0

    申请日：1982-02-23

    申请人： ENERGY CONVERSION DEVICES, INC.

    发明人： Cannella, Vincent D. ,  Izu, Masatsugu

    IPC分类号： H01L31/18 ,  C23C16/50

    CPC分类号： C23C16/24 ,  C23C16/509

    摘要： improved method for the generation of and deposition of semiconductor alloys from a plasma are disclosed. The uniformity of deposited layers of amorphous semiconductor material is enhanced by maintaining the frequency of an ionizing a.c. field in the plasma region between the cathode of a glow discharge chamber and the active surface of a substrate at about 50 to 200 kiloHertz to allow the favorable deposition of material at relatively low power. Improved sample quality and . deposition control (including uniformity) is realized at even high frequencies by the introduction of a quantity of inert gas, as diluent, into the chamber to alter the energy profile of the plasma.

    Solar cell production
    8.
    发明公开
    Solar cell production 失效
    太阳能电池的生产。

    公开(公告)号：EP0041773A1

    公开(公告)日：1981-12-16

    申请号：EP81302029.4

    申请日：1981-05-07

    申请人： ENERGY CONVERSION DEVICES, INC.

    发明人： Izu, Masatsugu ,  Cannella, Vincent D. ,  Ovshinsky, Stanford R.

    IPC分类号： H01L31/18 ,  H01L21/205

    CPC分类号： H01L31/206 ,  C23C16/517 ,  C23C16/54 ,  H01L31/046 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

    摘要： The continuous production of solar cells by the glow discharge (plasma) deposition of layers of varying electrical characteristics is achieved by advancing a substrate through a succession of deposition chambers. Each of the chambers is dedicated to a specific material type deposition. The chambers are mutually isolated to avoid the undesired admixture of reaction gases therebetween. Each plasma deposition is carried out in its glow discharge area, chamber, or chambers, with isolation between the plasma regions dedicated to different material types. Masking, mechanical or lithographic, can be employed relative to the substrate to cause the deposition in the desired configuration. After the semiconductor deposition is complete, top contact and anti-reflection layer or layers are deposited, followed by a protective lamination.