公开(公告)号：EP0613177A2

公开(公告)日：1994-08-31

申请号：EP94100576.1

申请日：1994-01-17

申请人： International Business Machines Corporation

发明人： Kobeda,Edward ,  Gambino, Jeffrey Peter ,  Gifford, George Gordon ,  Mazzeo, Nickolas Joseph

IPC分类号： H01L21/90 ,  H01L21/321

CPC分类号： H01L21/32136 ,  H01L21/31138 ,  H01L21/76895 ,  Y10S438/97

摘要： An etch stop layer of chromium (24) is initially deposited on the circuit elements of the CMOS silicon substrate. Next, a conductive layer of tungsten (26) is non-selectively deposited on the chromium layer (24). A photoresist mask (28) is then lithographically patterned over the tungsten layer (26). The tungsten layer (26) is then etched down to, and stopping at, the chromium layer (24), after which the photoresist mask (28) is stripped. The stripping preferably uses a low temperature plasma etch in O₂ at a temperature of less than 100°C. Finally, a directional O₂ reactive ion etch is used to remove the chromium layer (24) selectively to the silicon substrate.

摘要翻译： 本发明提供了一种用于在高密度CMOS电路中制造钨局部互连的方法，并且还提供了具有由钨形成的局部互连的高密度CMOS电路。 根据该方法，最初在CMOS硅衬底的电路元件上沉积铬的蚀刻停止层。 接下来，在铬层上不选择性地沉积钨的导电层。 然后光致抗蚀剂掩模在钨层上被光刻图案化。 然后将钨层蚀刻到铬层上并停止在其上，之后剥离光致抗蚀剂掩模。 剥离优选在低于100℃的温度下在O 2中使用低温等离子体蚀刻。最后，使用定向O 2反应离子蚀刻来选择性地去除硅衬底上的铬层。 借助于钨局部互连层下方的铬蚀刻停止层形成无边界触点。 该方法的整合方法导致使用标准光刻胶掩模在地形图上形成的各向异性金属线。 这种方法还允许触点的部分重叠以减小器件尺寸，从而导致改善的密度和性能。

公开(公告)号：EP0677737A2

公开(公告)日：1995-10-18

申请号：EP95104188.8

申请日：1995-03-22

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Gifford, George Gordon ,  Osborn, Brock Estel

IPC分类号： G01N21/71 ,  H05H1/00

CPC分类号： G01N21/71 ,  H05H1/0037

摘要： Analysis of plasma data indicative of gaseous species therein, such as Optical Emission Spectroscopy (OES) data, is aided through the interactive use of a computer. OES data may be calibrated by the computer with minimal input from the user regarding a gas the user knows or suspects is present. The computer then assumes the presence of that gas and assigns relative intensity peaks to known wavelengths for that gas, allowing calibration to take place. Selective identification of particular gases from the data is also possible. Used in conjunction with selective identification, a learning function allows the system to improve the accuracy of future gaseous species identification. Certain characteristics of a particular gas over time, such as intensity at a particular wavelength or at all wavelengths, may also be automatically plotted.

摘要翻译： 通过交互式使用计算机来辅助分析指示其中的气态物质的等离子体数据，例如光发射光谱（OES）数据。 OES数据可以由计算机校准，用户对用户知道或怀疑存在的气体的最小输入。 然后，计算机假设存在该气体，并将相对强度峰值分配给该气体的已知波长，从而允许进行校准。 从数据中选择性识别特定气体也是可能的。 与选择性识别结合使用，学习功能允许系统提高未来气态物种鉴定的准确性。 特定气体随时间的某些特性，例如在特定波长处或在所有波长处的强度也可以被自动绘制。

公开(公告)号：EP0613177A3

公开(公告)日：1995-01-25

申请号：EP94100576.1

申请日：1994-01-17

申请人： International Business Machines Corporation

发明人： Kobeda,Edward ,  Gambino, Jeffrey Peter ,  Gifford, George Gordon ,  Mazzeo, Nickolas Joseph

IPC分类号： H01L21/90 ,  H01L21/321

CPC分类号： H01L21/32136 ,  H01L21/31138 ,  H01L21/76895 ,  Y10S438/97

摘要： An etch stop layer of chromium (24) is initially deposited on the circuit elements of the CMOS silicon substrate. Next, a conductive layer of tungsten (26) is non-selectively deposited on the chromium layer (24). A photoresist mask (28) is then lithographically patterned over the tungsten layer (26). The tungsten layer (26) is then etched down to, and stopping at, the chromium layer (24), after which the photoresist mask (28) is stripped. The stripping preferably uses a low temperature plasma etch in O₂ at a temperature of less than 100°C. Finally, a directional O₂ reactive ion etch is used to remove the chromium layer (24) selectively to the silicon substrate.

公开(公告)号：EP0584676A1

公开(公告)日：1994-03-02

申请号：EP93113003.3

申请日：1993-08-13

申请人： International Business Machines Corporation

发明人： Gifford, George Gordon ,  Osborn, Brock Estel

IPC分类号： H01L21/66 ,  H01L21/02 ,  H01L21/04 ,  H01L21/06 ,  H01L21/00

CPC分类号： H01L21/67253 ,  G01J3/443 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/32972 ,  H01J37/3299 ,  H01J2237/332 ,  H01J2237/334

摘要： Automated, closed loop method and system for monitor and control of semiconductor fabrication processing are described. Optical emissions spectrometer (OES) data readings from a fabrication plasma chamber are statistically analyzed and a novel pattern model (based on Markov random fields) is used in combination with a selective stochastic relaxation technique to identify gaseous species within the chamber from the OES readings. Wavelength and intensity information is also employed to accurately estimate relative concentration levels of identified gases within the chamber. The unique statistical analysis approach described allows real-time monitor and control of physical processing within the fabrication chamber. Several practical algorithms are set forth, including techniques for OES peak identification, peak sharpening gas identification, and physical processing control.

摘要翻译： 对于显示器和半导体制造处理的控制自动化的，闭环的方法和系统进行了描述。 从制造等离子体室光发射光谱仪（OES）的数据读数进行统计分析和新模式模型（基于马尔可夫随机场）组合使用与选择性随机松弛技术来从OES读数室中识别的气态物种。 因此波长和强度信息被用来准确地设定在腔室中鉴定的气体的估计相对浓度水平。 描述的唯一的统计分析方法允许实时监测和制造腔室中的物理处理的控制。 几个实际的算法被阐述，包括OES峰识别，峰值锐化气体标识，以及物理处理控制的技术。

公开(公告)号：EP0425419A3

公开(公告)日：1991-11-21

申请号：EP90480151.1

申请日：1990-09-28

申请人： International Business Machines Corporation

发明人： Bennett, Reid Stuart ,  Ellingboe, Albert Rogers ,  Gifford, George Gordon ,  Singh, Jyothi ,  Haller, Kurt Lindsay ,  McKillop, John Slaton ,  Selwyn, Gary Stewart

IPC分类号： C23C16/50 ,  C23C16/54 ,  C23C14/56 ,  C23F4/00 ,  H01L21/00

CPC分类号： H01J37/32862 ,  C23C16/44 ,  C23C16/4401 ,  C23C16/515 ,  H01J2237/022 ,  Y10S156/916

摘要： Contamination levels in plasma processes are reduced during plasma processing, by prevention of formation of particles, by preventing entry of particles externally introduced or by removing particles spontaneously formed from chemical and/or mechanical sources. Some techniques for prevention of formation of particles include interrup­tion of the plasma by pulsing the source of plasma energy periodically, or application of energy to provide mechani­cal agitation such as mechanical shockwaves, acoustic stress, ultrasonic stress, vibrational stress, thermal stress, and pressure stress. Following a period of ap­plied stress, a tool is pumped out (if a plasma is used, the glow is first discontinued), vented, opened and flaked or particulate material is cleaned from the lower elec­trode and other surfaces. A burst of filtered air or nitrogen, or a vacuum cleaner is used for removal of deposition debris while the vented tool is open. Follow­ing this procedure, the tool is then be used.for product runs. Alternatively, improvement of semiconductor process yields can be achieved by addition of reagents to getter chemical precursors of contamination particulates and by filtration of particulates from feedgas before plasma processing. The efficiency and endpoint for the applied stress are determined, by laser light scattering, using a pulsed or continuous laser source, e.g. a HeNe laser.

公开(公告)号：EP0425419A2

公开(公告)日：1991-05-02

申请号：EP90480151.1

申请日：1990-09-28

申请人： International Business Machines Corporation

发明人： Bennett, Reid Stuart ,  Ellingboe, Albert Rogers ,  Gifford, George Gordon ,  Singh, Jyothi ,  Haller, Kurt Lindsay ,  McKillop, John Slaton ,  Selwyn, Gary Stewart

IPC分类号： C23C16/50 ,  C23C16/54 ,  C23C14/56 ,  C23F4/00 ,  H01L21/00

CPC分类号： H01J37/32862 ,  C23C16/44 ,  C23C16/4401 ,  C23C16/515 ,  H01J2237/022 ,  Y10S156/916

摘要： Contamination levels in plasma processes are reduced during plasma processing, by prevention of formation of particles, by preventing entry of particles externally introduced or by removing particles spontaneously formed from chemical and/or mechanical sources. Some techniques for prevention of formation of particles include interrup­tion of the plasma by pulsing the source of plasma energy periodically, or application of energy to provide mechani­cal agitation such as mechanical shockwaves, acoustic stress, ultrasonic stress, vibrational stress, thermal stress, and pressure stress. Following a period of ap­plied stress, a tool is pumped out (if a plasma is used, the glow is first discontinued), vented, opened and flaked or particulate material is cleaned from the lower elec­trode and other surfaces. A burst of filtered air or nitrogen, or a vacuum cleaner is used for removal of deposition debris while the vented tool is open. Follow­ing this procedure, the tool is then be used.for product runs. Alternatively, improvement of semiconductor process yields can be achieved by addition of reagents to getter chemical precursors of contamination particulates and by filtration of particulates from feedgas before plasma processing. The efficiency and endpoint for the applied stress are determined, by laser light scattering, using a pulsed or continuous laser source, e.g. a HeNe laser.

摘要翻译： 在等离子体处理期间，通过防止颗粒的形成，通过防止外部引入的颗粒进入或通过除去由化学和/或机械源自发形成的颗粒，等离子体处理中的污染水平降低。 用于防止颗粒形成的一些技术包括通过脉冲等离子体能量源周期性地中断等离子体，或施加能量以提供机械搅拌，例如机械冲击波，声应力，超声应力，振动应力，热应力和压力应力 。 经过一段时间的施加应力，泵出一个工具（如果使用等离子体，则首先停止发光），从下部电极和其他表面清除通风，打开和剥落或颗粒物质。 过滤的空气或氮气的爆裂或真空吸尘器用于在通风工具打开时去除沉积物。 按照此过程，然后使用该工具进行产品运行。 或者，半导体工艺产量的改善可以通过添加试剂来吸收污染物颗粒的化学前体和通过在等离子体处理之前从原料气中过滤颗粒来实现。 通过激光散射来确定所施加的应力的效率和终点，使用脉冲或连续激光源，例如， HeNe激光。