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公开(公告)号：EP1629305A2
公开(公告)日：2006-03-01
申请号：EP04710201.7
申请日：2004-02-11
IPC分类号： G02B1/00
CPC分类号： G02B6/1228 , G02B6/124 , G02B6/305 , G02B6/34 , G02B2006/12097 , G02B2006/1213
摘要： An optical waveguide grating coupler (102) for coupling light between a planar waveguide (100) and an optical element such as an optical fiber (106). The optical waveguide grating coupler (102) includes a grating comprising a plurality of elongate scattering elements (103). The optical waveguide grating coupler (102) is preferably flared, and in various embodiments has hyperbolically shaped sidewalls (212). The elongate scattering elements (103) are preferably curved, and in some embodiments, the scattering elements have elliptically curved shapes (216). Preferably, the elongated scattering elements have grating widths selected to accommodate the desired optical intensity distribution.
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2.发明公开OPTICAL WAVEGUIDE GRATING COUPLER INCORPORATING REFLECTIVE OPTICAL ELEMENTS AND ANTI-REFLECTION ELEMENTS 审中-公开有光学元件及防反射光反射元件光纤光栅耦合器
公开(公告)号：EP1629306A2
公开(公告)日：2006-03-01
申请号：EP04710253.8
申请日：2004-02-11
IPC分类号： G02B1/00
CPC分类号： G02B6/30 , G02B6/12004 , G02B6/1228 , G02B6/124 , G02B6/132 , G02B6/136 , G02B6/2852 , G02B6/305 , G02B2006/12097
摘要： An optical wavelength grating coupler (102) incorporating one or more distributed Bragg reflectors (DBR) (434) or other reflective elements to enhance the coupling efficiency thereof. The grating coupler (102) has a grating (408) comprising scattering elements (103), and the one or more DBRs (434) are positioned with respect to the grating such that light passing through the grating towards the substrate (414) of the grating coupler (102) is reflected back by DBRs toward the grating. The DBR (434) comprises a multilayer stack of various materials and may be formed on the substrate (414). The grating coupler (102) may include a gas-filled cavity (472), where the cavity is formed by a conventional etching process and is used to reflect light toward the grating (408). The grating coupler (102) may also incorporate an anti-reflection coating (486) to reduce reflective loss on the surface of the grating.
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公开(公告)号：EP1660923A2
公开(公告)日：2006-05-31
申请号：EP04781523.8
申请日：2004-08-16
申请人： Luxtera, Inc. , Gunn, Lawrence C. III , Koumans, Roger , Li, Bing , Li, Guo Liang , Pinguet, Thierry J.
CPC分类号： H01S5/0265 , G02B2006/12142 , G02B2006/12159 , G02F1/0121 , G02F1/025 , G02F1/2255 , G02F1/2257 , G02F2201/127 , G02F2201/16 , G02F2201/20 , H01S5/5027 , H04B10/5051 , H04B10/5053
摘要： High speed optical modulators (700) can be made of k modulators (740) connected in series disposed on one of a variety of semiconductor substrates. An electrical signal propagating in a microwave transmission line (710) is tapped off of the transmission line at regular intervals and is amplified by k distributed amplifiers (720). Each of the outputs of the k distributed amplifiers is connected to a respective one of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable lumped element modulator, due to the lower capacitance of each of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable traveling wave modulator, due to the impedance matching provided by the distributed amplifiers.
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公开(公告)号：EP1631980B1
公开(公告)日：2018-08-15
申请号：EP04718583.0
申请日：2004-03-08
IPC分类号： H01L21/8238 , H01L21/20 , H01L21/205 , H01L27/144
CPC分类号： H01L21/823878 , H01L21/8238 , Y10S438/958
摘要： Methods for deposition of a Ge layer during a CMOS process on a monolithic device are disclosed. The insertion of the Ge layer enables the conversion of light to electrical signals easily. As a result of this method, standard metals can be attached directly to the Ge in completing an electrical circuit. Vias can also be used to connect to the Ge layer. In a first aspect of the invention, a method comprises the step of incorporating the deposition of Ge at multiple temperatures in a standard CMOS process. In a second aspect of the invention, a method comprises the step of incorporating the deposition of poly-Ge growth in a standard CMOS process.
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公开(公告)号：EP1629305B1
公开(公告)日：2014-08-13
申请号：EP04710201.7
申请日：2004-02-11
申请人： Luxtera, Inc.
CPC分类号： G02B6/1228 , G02B6/124 , G02B6/305 , G02B6/34 , G02B2006/12097 , G02B2006/1213
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公开(公告)号：EP1606660B1
公开(公告)日：2017-11-15
申请号：EP04713786.4
申请日：2004-02-23
申请人： Luxtera, Inc.
CPC分类号： G02B6/124 , G02B6/1228 , G02B6/126 , G02B6/2726 , G02B6/2733 , G02B6/2773 , G02B6/30 , G02B6/34 , G02B6/4214 , G02B2006/1213
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公开(公告)号：EP1779161A2
公开(公告)日：2007-05-02
申请号：EP05750940.8
申请日：2005-05-18
申请人： Luxtera, Inc.
IPC分类号： G02B6/12
CPC分类号： G02F1/025 , G02B2006/12097 , G02B2006/12142 , G02F1/2257 , G02F2201/063
摘要： High speed optical modulators (100) can be made of a reverse biased lateral PN diode (105) formed in a silicon rib optical waveguide (112) disposed on a SOI or other silicon based substrate (100). A PN junction is formed at the boundary of the P and N doped regions (120, 130) The depletion region at the PN junction (106) overlaps with the center of a guided optical mode propagating through the waveguide (110). Electrically modulating a reverse biased lateral PN diode (105) causes a phase shift in an optical wave propagating through the waveguide (110). Prior art forward biased PN and PIN diode modulators have been relatively low speed devices.
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公开(公告)号：EP1779161B1
公开(公告)日：2018-10-03
申请号：EP05750940.8
申请日：2005-05-18
申请人： Luxtera, Inc.
CPC分类号： G02F1/025 , G02B2006/12097 , G02B2006/12142 , G02F1/2257 , G02F2201/063
摘要： High speed optical modulators can be made of a reverse biased lateral PN diode formed in a silicon rib optical waveguide disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a reverse biased lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Prior art forward biased PN and PIN diode modulators have been relatively low speed devices.
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公开(公告)号：EP1631980A2
公开(公告)日：2006-03-08
申请号：EP04718583.0
申请日：2004-03-08
IPC分类号： H01L21/20
CPC分类号： H01L21/823878 , H01L21/8238 , Y10S438/958
摘要： Methods for deposition of a Ge layer during a CMOS process on a monolithic device are disclosed. The insertion of the Ge layer enables the conversion of light to electrical signals easily. As a result of this method, standard metals can be attached directly to the Ge in completing an electrical circuit. Vias can also be used to connect to the Ge layer. In a first aspect of the invention, a method comprises the step of incorporating the deposition of Ge at multiple temperatures in a standard CMOS process. In a second aspect of the invention, a method comprises the step of incorporating the deposition of poly-Ge growth in a standard CMOS process.
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公开(公告)号：EP1606660A2
公开(公告)日：2005-12-21
申请号：EP04713786.4
申请日：2004-02-23
申请人： Luxtera, Inc.
IPC分类号： G02B6/26
CPC分类号： G02B6/124 , G02B6/1228 , G02B6/126 , G02B6/2726 , G02B6/2733 , G02B6/2773 , G02B6/30 , G02B6/34 , G02B6/4214 , G02B2006/1213
摘要： A polarization splitting grating coupler (PSGC) (100) connects an optical signal from an optical element (105), such as a fiber, to an optoelectronic integrated circuit (101). The PSGC (100) separates a received optical signal into two orthogonal polarizations and directs the two polarizations to separate waveguides on an integrated circuit (101). Each of the two separated polarizations can then be processed, as needed for a particular application, by the integrated circuit (1 O 1). A PSGC (100) can also operate in the reverse direction, and couple two optical signals from an integrated circuit to two respective orthogonal polarizations of one optical output signal sent off chip to an optical fiber.
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