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1.发明公开Manufacturing method and apparatus for semiconductor device 失效Vorrichtung und Verfahren zur Herstellung von einem Halbleiteranordnung
公开(公告)号：EP0855621A2
公开(公告)日：1998-07-29
申请号：EP98101196.8
申请日：1998-01-23
发明人： Endo, Masayuki , Fukumoto, Toru , Ohsaki, Hiromi
CPC分类号： G03F7/0757 , G03F7/00 , G03F7/0045 , G03F7/0751 , G03F7/70991 , H01L21/3121
摘要： In a clean room, after conducting a surface treatment on the surface of a semiconductor substrate with 4-trimethylsiloxy-3-penten-2-one, the treated surface of the semiconductor substrate is coated with a chemically amplified resist, thereby forming a first resist film. Then, the first resist film is successively subjected to exposure, PEB and development, thereby forming a first resist pattern of the chemically amplified resist. Next, in the same clean room, after conducting a surface treatment on the surface of the semiconductor substrate with 4-dimethyl-n-hexylsiloxy-3-penten-2-one, the treated surface of the semiconductor substrate is coated with a non-chemically amplified resist, thereby forming a second resist film. Then, the second resist film is successively subjected to the exposure, the PEB and the development, thereby forming a second resist pattern of the non-chemically amplified resist.
摘要翻译： 在洁净室中，在用4-三甲基甲硅烷氧基-3-戊烯-2-酮在半导体衬底的表面上进行表面处理之后，用化学放大抗蚀剂涂覆半导体衬底的处理表面，从而形成第一抗蚀剂 电影。 然后，依次对第一抗蚀剂膜进行曝光，PEB显影，形成化学放大抗蚀剂的第一抗蚀剂图案。 接下来，在相同的无尘室中，在用4-二甲基 - 正己基甲硅烷氧基-3-戊烯-2-酮在半导体基板的表面上进行表面处理之后， 化学放大抗蚀剂，从而形成第二抗蚀剂膜。 然后，第二抗蚀剂膜依次进行曝光，PEB和显影，从而形成非化学放大抗蚀剂的第二抗蚀剂图案。
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公开(公告)号：EP0837369B1
公开(公告)日：2001-12-19
申请号：EP97115726.8
申请日：1997-09-10
发明人： Endo, Masayuki , Ohsaki, Hiromi
IPC分类号： G03F7/075
CPC分类号： G03F7/0751
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3.发明公开Pattern formation method and surface treating agent 失效Bilderzeugungsverfahren undOberflächenbehandlungsmittel
公开(公告)号：EP0757290A2
公开(公告)日：1997-02-05
申请号：EP96112569.7
申请日：1996-08-02
IPC分类号： G03F7/075
CPC分类号： G03F7/0751
摘要： To the surface of a semiconductor substrate made of silicon, isopropenoxytrimethylsilane is supplied as a surface treating agent to render the surface of the semiconductor substrate hydrophobic and increase adhesion to the semiconductor substrate. Thus, Si(CH 3 ) 3 (trimethylsilyl group) is substituted for the hydrogen atom of an OH group on the surface of the semiconductor substrate, resulting in (CH 3 ) 2 CO (acetone). Subsequently, a chemically amplified resist is applied to the surface of the semiconductor substrate and exposed to light by using a desired mask, followed sequentially by PEB and development for forming a pattern. Since the surface treating agent does not generate ammonia, there can be formed a pattern in excellent configuration with no insoluble skin layer formed thereon.
摘要翻译： 向由硅制成的半导体衬底的表面提供异丙烯氧基三甲基硅烷作为表面处理剂，使半导体衬底的表面疏水化并增加对半导体衬底的粘合性。 因此，Si（CH 3）3（三甲基甲硅烷基）取代了半导体衬底表面上的OH基的氢原子，得到（CH 3）2 CO（丙酮）。 随后，通过使用所需的掩模将化学放大型抗蚀剂施加到半导体衬底的表面并暴露于光，然后依次由PEB和显影形成图案。 由于表面处理剂不产生氨，因此可以形成具有优异构型的图案，其上不形成不溶性表皮层。
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公开(公告)号：EP0855621B1
公开(公告)日：2002-04-17
申请号：EP98101196.8
申请日：1998-01-23
发明人： Endo, Masayuki , Fukumoto, Toru , Ohsaki, Hiromi
CPC分类号： G03F7/0757 , G03F7/00 , G03F7/0045 , G03F7/0751 , G03F7/70991 , H01L21/3121
摘要： In a clean room, after conducting a surface treatment on the surface of a semiconductor substrate with 4-trimethylsiloxy-3-penten-2-one, the treated surface of the semiconductor substrate is coated with a chemically amplified resist, thereby forming a first resist film. Then, the first resist film is successively subjected to exposure, PEB and development, thereby forming a first resist pattern of the chemically amplified resist. Next, in the same clean room, after conducting a surface treatment on the surface of the semiconductor substrate with 4-dimethyl-n-hexylsiloxy-3-penten-2-one, the treated surface of the semiconductor substrate is coated with a non-chemically amplified resist, thereby forming a second resist film. Then, the second resist film is successively subjected to the exposure, the PEB and the development, thereby forming a second resist pattern of the non-chemically amplified resist.
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公开(公告)号：EP0855621A3
公开(公告)日：1998-09-02
申请号：EP98101196.8
申请日：1998-01-23
发明人： Endo, Masayuki , Fukumoto, Toru , Ohsaki, Hiromi
CPC分类号： G03F7/0757 , G03F7/00 , G03F7/0045 , G03F7/0751 , G03F7/70991 , H01L21/3121
摘要： In a clean room, after conducting a surface treatment on the surface of a semiconductor substrate with 4-trimethylsiloxy-3-penten-2-one, the treated surface of the semiconductor substrate is coated with a chemically amplified resist, thereby forming a first resist film. Then, the first resist film is successively subjected to exposure, PEB and development, thereby forming a first resist pattern of the chemically amplified resist. Next, in the same clean room, after conducting a surface treatment on the surface of the semiconductor substrate with 4-dimethyl-n-hexylsiloxy-3-penten-2-one, the treated surface of the semiconductor substrate is coated with a non-chemically amplified resist, thereby forming a second resist film. Then, the second resist film is successively subjected to the exposure, the PEB and the development, thereby forming a second resist pattern of the non-chemically amplified resist.
摘要翻译： 在洁净室中，在用4-三甲基甲硅烷氧基-3-戊烯-2-酮对半导体基板的表面进行表面处理之后，用化学放大型抗蚀剂涂布半导体基板的处理过的表面，由此形成第一抗蚀剂 电影。 然后，第一抗蚀剂膜依次进行曝光，PEB和显影，由此形成化学放大型抗蚀剂的第一抗蚀剂图案。 接下来，在同一洁净室中，在用4-二甲基 - 正己基甲硅烷氧基-3-戊烯-2-酮在半导体衬底的表面上进行表面处理之后，在半导体衬底的处理过的表面上涂覆非 - 化学放大型抗蚀剂，由此形成第二抗蚀剂膜。 然后，第二抗蚀剂膜依次进行曝光，PEB和显影，从而形成非化学放大型抗蚀剂的第二抗蚀剂图案。
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公开(公告)号：EP0855622A1
公开(公告)日：1998-07-29
申请号：EP98101210.7
申请日：1998-01-23
发明人： Endo, Masayuki , Fukumoto, Toru , Ohsaki, Hiromi
IPC分类号： G03F7/075
CPC分类号： G03F7/0751
摘要： Within a coater not provided with a chemical filter, 4-trimethylsiloxy-3-penten-2-one is supplied as a surface treatment agent onto the surface of a semiconductor substrate of silicon, thereby making the surface of the semiconductor substrate hydrophobic so as to improve the adhesion of the semiconductor substrate. Then, within the coater, the semiconductor substrate is coated with a chemically amplified resist, thereby forming a resist film. Subsequently, the resist film is exposed by using a desired mask within an exposure machine not provided with a chemical filter. Ultimately, the exposed resist film is successively subjected to PEB and development within a developer not provided with a chemical filter, thereby forming a resist pattern.
摘要翻译： 在没有设置化学过滤器的涂布机中，将4-三甲基甲硅烷氧基-3-戊烯-2-酮作为表面处理剂供给到硅的半导体基板的表面上，由此使得半导体基板的表面具有疏水性，以便 改善半导体衬底的附着力。 然后，在涂布机内，用化学放大型抗蚀剂涂布半导体基板，由此形成抗蚀剂膜。 随后，通过在没有设置化学过滤器的曝光机内使用期望的掩模来曝光抗蚀剂膜。 最后，将曝光的抗蚀剂膜依次在没有设置化学过滤器的显影剂内进行PEB和显影，由此形成抗蚀剂图案。
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7.发明公开Pattern formation method and surface treatment agent 失效Mustererzeugungsverfahren undOberflächenbehandlungsmittel
公开(公告)号：EP0837369A1
公开(公告)日：1998-04-22
申请号：EP97115726.8
申请日：1997-09-10
发明人： Endo, Masayuki , Ohsaki, Hiromi
IPC分类号： G03F7/075
CPC分类号： G03F7/0751
摘要： A surface of a semiconductor substrate of silicon is supplied with 4-trimethylsiloxy-3-penten-2-one serving as a surface treatment agent. Thus, H in OH groups existing on the surface of the semiconductor substrate is substituted with Si(CH 3 ) 3 (i.e., a trimethylsilyl group), resulting in producing CH 3 COCH 2 COCH 3 (i.e., acetylacetone). Then, the surface of the semiconductor substrate is coated with a resist, exposed by using a desired mask, and subjected successively to PEB and development, thereby forming a resist pattern thereon. Since the surface of the semiconductor substrate is treated with 4-trimethylsiloxy-3-penten-2-one, the surface of the semiconductor substrate is made to be hydrophobic, so that the adhesion of the semiconductor substrate can be improved. As a result, the resultant resist pattern has a satisfactory shape free from peeling.
摘要翻译： 供给作为表面处理剂的4-三甲基甲硅烷氧基-3-戊烯-2-酮的硅的半导体基板的表面。 因此，存在于半导体衬底表面的OH基中的H被Si（CH3）3（即三甲基甲硅烷基）取代，从而产生CH3COCH2COCH3（即乙酰丙酮）。 然后，用抗蚀剂涂布半导体基板的表面，利用所需的掩模进行曝光，依次进行PEB显影，形成抗蚀图案。 由于半导体衬底的表面被4-三甲基甲硅烷氧基-3-戊烯-2-酮处理，所以半导体衬底的表面被制成疏水性，从而可以提高半导体衬底的粘合性。 结果，所得到的抗蚀剂图案具有令人满意的无剥离的形状。
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公开(公告)号：EP0669428A3
公开(公告)日：1996-09-11
申请号：EP95102791.1
申请日：1995-02-27
发明人： Ohsaki, Hiromi , Itoh, Kenichi , Oshima, Takao
摘要： A method of laying a road characterized by spraying and impregnating a roadbed with 1 g/m 2 to 500 g/m 2 of a liquid water-repellent agent and then laying a road on said roadbed wherein said liquid water repellent agent is fluid at ordinary temperatures and contains as the main ingredients one or more compounds chosen from among silane-type compounds and organopolysiloxane derivatives.
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公开(公告)号：EP0481434A3
公开(公告)日：1992-07-22
申请号：EP91117588.3
申请日：1991-10-15
IPC分类号： C09D5/25 , C09D183/00 , H01B3/46
CPC分类号： H01B3/46 , C09D183/16 , C08L2666/44 , C08L2666/54
摘要： By blending a silazane compound with an organic silicone polymer such as polycarbosilane and polysilazane and inorganic powder such as alumina and silica, there is obtained a coating composition which can be applied and baked to metallic and non-metallic substrates to form dielectric coatings which are improved in many properties including substrate adhesion, hardness, electrical insulation, heat resistance, water resistance, and chemical resistance.
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10.发明公开Heat resistant, dielectric coating compositions 失效Hitzebeständige，dielektrischeÜberzugszusammensetzungen。
公开(公告)号：EP0481434A2
公开(公告)日：1992-04-22
申请号：EP91117588.3
申请日：1991-10-15
IPC分类号： C09D5/25 , C09D183/00 , H01B3/46
CPC分类号： H01B3/46 , C09D183/16 , C08L2666/44 , C08L2666/54
摘要： By blending a silazane compound with an organic silicone polymer such as polycarbosilane and polysilazane and inorganic powder such as alumina and silica, there is obtained a coating composition which can be applied and baked to metallic and non-metallic substrates to form dielectric coatings which are improved in many properties including substrate adhesion, hardness, electrical insulation, heat resistance, water resistance, and chemical resistance.
摘要翻译： 通过将硅氮烷化合物与有机硅聚合物如聚碳硅烷和聚硅氮烷以及无机粉末如氧化铝和二氧化硅共混，得到涂料组合物，其可以施加和烘烤金属和非金属基底以形成改进的电介质涂层 在许多性能中，包括基底粘附性，硬度，电绝缘性，耐热性，耐水性和耐化学性。
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