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1.发明公开Pattern formation method and surface treating agent 失效Bilderzeugungsverfahren undOberflächenbehandlungsmittel
公开(公告)号：EP0757290A2
公开(公告)日：1997-02-05
申请号：EP96112569.7
申请日：1996-08-02
IPC分类号： G03F7/075
CPC分类号： G03F7/0751
摘要： To the surface of a semiconductor substrate made of silicon, isopropenoxytrimethylsilane is supplied as a surface treating agent to render the surface of the semiconductor substrate hydrophobic and increase adhesion to the semiconductor substrate. Thus, Si(CH 3 ) 3 (trimethylsilyl group) is substituted for the hydrogen atom of an OH group on the surface of the semiconductor substrate, resulting in (CH 3 ) 2 CO (acetone). Subsequently, a chemically amplified resist is applied to the surface of the semiconductor substrate and exposed to light by using a desired mask, followed sequentially by PEB and development for forming a pattern. Since the surface treating agent does not generate ammonia, there can be formed a pattern in excellent configuration with no insoluble skin layer formed thereon.
摘要翻译： 向由硅制成的半导体衬底的表面提供异丙烯氧基三甲基硅烷作为表面处理剂，使半导体衬底的表面疏水化并增加对半导体衬底的粘合性。 因此，Si（CH 3）3（三甲基甲硅烷基）取代了半导体衬底表面上的OH基的氢原子，得到（CH 3）2 CO（丙酮）。 随后，通过使用所需的掩模将化学放大型抗蚀剂施加到半导体衬底的表面并暴露于光，然后依次由PEB和显影形成图案。 由于表面处理剂不产生氨，因此可以形成具有优异构型的图案，其上不形成不溶性表皮层。
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公开(公告)号：EP0595361B1
公开(公告)日：1999-03-10
申请号：EP93117627.5
申请日：1993-10-29
CPC分类号： G03F7/0045 , G03F7/40
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公开(公告)号：EP0704762A1
公开(公告)日：1996-04-03
申请号：EP95301947.8
申请日：1995-03-23
发明人： Fumiyoshi, Urano, c/o Tokyo Kenkyusho , Takaaki, Negishi, c/o Tokyo Kenkyusho , Katsuyama, Akiko , Endo, Masayuki
IPC分类号： G03F7/004
CPC分类号： G03F7/0045 , Y10S430/11
摘要： A resist material comprising (a) a terpolymer, (b) a photoacid generator, and (c) a solvent has high light sensitivity, heat resistance, adhesiveness, resolution, etc., and is suitable for forming a pattern of rectangular shape.
摘要翻译： 抗蚀剂材料包括（a）三元共聚物，（b）光致酸发生剂和（c）溶剂，具有高的光敏性，耐热性，粘合性，分辨率等，并且适于形成矩形图案。
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公开(公告)号：EP0665470A3
公开(公告)日：1996-04-03
申请号：EP95100633.7
申请日：1995-01-18
CPC分类号： G03F7/16 , G03F7/085 , G03F7/11 , Y10S438/949
摘要： An acid solution is fed onto a TiN film formed on a semiconductor substrate. So, the TiN film is dipped into the acid solution, whereupon the surface of the semiconductor substrate is neutralized or is made less basic. Then, a chemically amplified resist, containing an acid generator which produces an acid when irradiated with radiant rays and a compound reactive to acids, is applied to the semiconductor substrate, to form a resist film. This is followed by a step for sending radiant rays upon the resist film to expose it. Then, the exposed resist pattern is developed to form a resist pattern without footing or scumming and under-cutting.
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公开(公告)号：EP0747767B1
公开(公告)日：2002-01-16
申请号：EP96103506.0
申请日：1996-03-06
发明人： Endo, Masayuki , Katsuyama, Akiko
IPC分类号： G03F7/004
CPC分类号： G03F7/70866 , G03F7/0045 , G03F7/039 , G03F7/16 , G03F7/20 , G03F7/26
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公开(公告)号：EP1143297A2
公开(公告)日：2001-10-10
申请号：EP01113823.7
申请日：1996-03-06
发明人： Endo, Masayuki , Katsuyama, Akiko
CPC分类号： G03F7/70866 , G03F7/0045 , G03F7/039 , G03F7/16 , G03F7/20 , G03F7/26
摘要： A method for forming a pattern, comprising:
a first step of setting the humidity in an enviroment for forming a resist pattern at a low level when the profile of the resist pattern tends to be a T-top profile as compared with a reference pattern profile but setting the humidity at a high level when the profile of the resist pattern tends to be a round-shoulder profile as compared with the reference pattern profile;
a second step of forming a resist film by coating a substrate with a resist;
a third step of exposing said resist film through a mask in an environment with the humidity set at said first step; and
a fourth step of developing said resist film which is exposed to thereby form a resist pattern.摘要翻译： 一种用于形成图案的方法，包括：当与参考图案轮廓相比，当抗蚀剂图案的轮廓倾向于是T顶部轮廓时，在环境中设置湿度以形成低水平的第一步骤 但是当与参考图案轮廓相比，当抗蚀剂图案的轮廓倾向于是圆肩轮廓时，将湿度设置在高水平; 通过用抗蚀剂涂布基板来形成抗蚀剂膜的第二步骤; 第三步骤，在湿度设定在所述第一步骤的环境中，通过掩模曝光所述抗蚀剂膜; 以及显影所述抗蚀剂膜的第四步骤，由此形成抗蚀剂图案。
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公开(公告)号：EP0704762B1
公开(公告)日：1999-12-15
申请号：EP95301947.8
申请日：1995-03-23
发明人： Fumiyoshi, Urano, c/o Tokyo Kenkyusho , Takaaki, Negishi, c/o Tokyo Kenkyusho , Katsuyama, Akiko , Endo, Masayuki
IPC分类号： G03F7/004
CPC分类号： G03F7/0045 , Y10S430/11
摘要： A resist material comprising (a) a terpolymer, (b) a photoacid generator, and (c) a solvent has high light sensitivity, heat resistance, adhesiveness, resolution, etc., and is suitable for forming a pattern of rectangular shape.
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公开(公告)号：EP0747767A3
公开(公告)日：1997-07-30
申请号：EP96103506.0
申请日：1996-03-06
发明人： Endo, Masayuki , Katsuyama, Akiko
IPC分类号： G03F7/004
CPC分类号： G03F7/70866 , G03F7/0045 , G03F7/039 , G03F7/16 , G03F7/20 , G03F7/26
摘要： The composition of a resist material is determined so that the film thinning quantity of the resist pattern is increased when the profile of a resist pattern which is formed in advance tends to be a T-top profile as compared with a reference pattern profile but so that the film thinning quantity of the resist pattern is decreased when the profile of the resist pattern which is formed in advance tends to be a round-shoulder profile as compared with the reference pattern profile. After coating a semiconductor substrate at its top with the resist material whose composition is determined as such to thereby form a resist film, the resist film is exposed through a mask. The exposed resist film is developed, whereby a resist pattern is obtained.
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公开(公告)号：EP0778613A1
公开(公告)日：1997-06-11
申请号：EP96119388.5
申请日：1996-12-03
发明人： Katsuyama, Akiko , Endo, Masayuki
IPC分类号： H01L21/312 , B05D3/06 , G03F7/00
CPC分类号： G03F7/11 , G03F7/16 , H01L21/312
摘要： After forming a TiN film on a semiconductor substrate, a surface treatment agent in a gas phase, which is obtained by bubbling trimethylsilyl methylsulfonate with a nitrogen gas, is supplied onto the TiN film. The TiN film is then coated with a chemically amplified positive resist including an acid generator and a compound which can attain alkali solubility through the function of an acid, and a pre-bake process is subsequently conducted, thereby forming a resist film. The resist film is then exposed with a KrF excimer laser by using a desired mask. Through this exposure, an acid is generated from the acid generator included in the resist film. Since sulfonic acid produced from trimethylsilyl methylsulfonate weakens the function as a base of a nitrogen atom having a lone pair, the acid generated from the acid generator is not deactivated at the bottom of the resist film. As a result, a resist pattern with a satisfactory shape free from footing can be formed.
摘要翻译： 在半导体衬底上形成TiN膜之后，将通过用氮气鼓泡三甲基甲硅烷基甲磺酸酯获得的气相中的表面处理剂供给到TiN膜上。 然后用包含酸产生剂和能够通过酸的功能获得碱溶解性的化合物的化学放大正性抗蚀剂涂覆TiN膜，随后进行预烘烤工艺，从而形成抗蚀剂膜。 然后通过使用所需的掩模用KrF准分子激光器曝光抗蚀剂膜。 通过该曝光，从抗蚀剂膜中包含的酸发生剂产生酸。 由于由三甲基甲硅烷基甲基磺酸盐生成的磺酸使作为具有单一对的氮原子的碱的功能变弱，所以在酸性发生剂产生的酸在抗蚀剂膜的底部不失活。 结果，可以形成具有令人满意的无基底形状的抗蚀剂图案。
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公开(公告)号：EP1143297A3
公开(公告)日：2003-12-10
申请号：EP01113823.7
申请日：1996-03-06
发明人： Endo, Masayuki , Katsuyama, Akiko
CPC分类号： G03F7/70866 , G03F7/0045 , G03F7/039 , G03F7/16 , G03F7/20 , G03F7/26
摘要： A method for forming a pattern, comprising: a first step of setting the humidity in an enviroment for forming a resist pattern at a low level when the profile of the resist pattern tends to be a T-top profile as compared with a reference pattern profile but setting the humidity at a high level when the profile of the resist pattern tends to be a round-shoulder profile as compared with the reference pattern profile; a second step of forming a resist film by coating a substrate with a resist; a third step of exposing said resist film through a mask in an environment with the humidity set at said first step; and a fourth step of developing said resist film which is exposed to thereby form a resist pattern.
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