公开(公告)号：EP1830405A4

公开(公告)日：2011-03-30

申请号：EP05816412

申请日：2005-12-19

申请人： MITSUBISHI ELECTRIC CORP

发明人： INAGUCHI TAKASHI ,  OHI TAKESHI ,  FUKUHARA KATSUHIKO ,  YAMADA NAOSHI ,  INABA YOSHITSUGU ,  MITSUHASHI TAKAO

IPC分类号： H01L23/34

CPC分类号： H01L29/7395 ,  G01K7/22 ,  H01L23/24 ,  H01L23/34 ,  H01L24/48 ,  H01L2224/0401 ,  H01L2224/05647 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01057 ,  H01L2924/01067 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： An object of the present invention is to provide a semiconductor device capable of accurately monitoring a temperature of a semiconductor chip even in a noise environment, while not requiring a highly accurate detection circuit. A PTC element (9) is bonded onto an IGBT chip (24). Then, a constant current is allowed to flow from a constant current source (22) through the PTC element (9), and an output voltage of the PTC element (9) is detected by a voltage monitor (23). When a change in output voltage increases, a voltage applied to a gate electrode (6) by a detection circuit is decreased. Since the PTC element (9) is directly arranged onto the IGBT chip (24), the temperature of the IGBT chip (24) can be monitored with high accuracy. Further, since the change in output voltage of the PTC element (9) per 1 °C is large, a highly accurate detection circuit is not necessary, thereby allowing accurate monitoring of the temperature of the IGBT chip (24) even in a noise environment.