公开(公告)号：EP2980584A4

公开(公告)日：2016-11-02

申请号：EP13879951

申请日：2013-12-18

申请人： MITSUBISHI ELECTRIC CORP

发明人： NODA SEIJI ,  MIYA KAZUHIRO ,  FURUKAWA SEIJI ,  SUZUKI KAZUTAKA ,  AOYAGI YOSHIRO ,  INABA YOSHITSUGU ,  IIJIMA SHIGERU

IPC分类号： G01N33/18 ,  C02F1/00 ,  C02F1/42 ,  C02F5/00 ,  C02F5/08 ,  F24H9/00

CPC分类号： G01N33/1853 ,  F24D17/02 ,  F24D19/0092 ,  F24H4/04

摘要： A method for checking a water quality is carried out by a water quality checking device 100 that checks water quality of water flowing through a heat exchanger. In a first process, in a solution, respective values of a calcium ion concentration, a carbonate ion concentration, a hydrogen ion concentration, a water temperature, and a concentration of dissolved ion that reacts with calcium ion, and that produces salt with low solubility are measured. In a second process, based on the measured values of the calcium ion concentration, the carbonate ion concentration, the hydrogen ion concentration and the water temperature, a supersaturation coefficient of calcium carbonate in the solution is calculated. In a third process, by applying the measured concentration value of the dissolved ion that reacts with calcium ion and that produces salt with low solubility, a modified supersaturation coefficient that is corrected from the supersaturation coefficient is calculated. In a fourth process, the water quality is determined based on the modified supersaturation coefficient that has been calculated.

公开(公告)号：EP2957839A4

公开(公告)日：2016-09-07

申请号：EP13875263

申请日：2013-10-17

申请人： MITSUBISHI ELECTRIC CORP

发明人： INABA YOSHITSUGU ,  MIYASHITA SHOUJI ,  TOYOSHIMA MASAKI ,  IKEDA KAZUKI

IPC分类号： F24H1/00 ,  F24D19/10 ,  F24H1/18

CPC分类号： F24D17/02 ,  F24D19/0092 ,  F24D19/1012 ,  F24D19/1054 ,  Y02B30/745

摘要： A flow rate of hot or cold water flowing through a circulation circuit is appropriately changed to prevent deposition of alien substance such as scale, and stably perform a heating operation. A hot water supply device includes a heat pump unit 1, a hot water storage tank 11, a circulation pump 12, a control device 30, or the like. When performing the heating operation, the control device 30 controls a rotation speed of the circulation pump 12 to perform a steady operation for maintaining a circulation flow rate of hot or cold water flowing through a secondary channel 3A of the water heating heat exchanger 3 at a steady flow rate A, and a pulsing operation for temporarily reducing and increasing the circulation flow rate with respect to the steady flow rate A. Also, a flow rate difference ”A between a maximum flow rate A H and a minimum flow rate A L of the circulation flow rate during the pulsing operation is maintained at a reference value S or larger at which deposition of alien substance in the secondary channel 3A can be prevented. Thus, the heating operation can be stably performed, and pulsing of the circulation flow rate can be used to prevent deposition of scale.

公开(公告)号：EP1830405A4

公开(公告)日：2011-03-30

申请号：EP05816412

申请日：2005-12-19

申请人： MITSUBISHI ELECTRIC CORP

发明人： INAGUCHI TAKASHI ,  OHI TAKESHI ,  FUKUHARA KATSUHIKO ,  YAMADA NAOSHI ,  INABA YOSHITSUGU ,  MITSUHASHI TAKAO

IPC分类号： H01L23/34

CPC分类号： H01L29/7395 ,  G01K7/22 ,  H01L23/24 ,  H01L23/34 ,  H01L24/48 ,  H01L2224/0401 ,  H01L2224/05647 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01057 ,  H01L2924/01067 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： An object of the present invention is to provide a semiconductor device capable of accurately monitoring a temperature of a semiconductor chip even in a noise environment, while not requiring a highly accurate detection circuit. A PTC element (9) is bonded onto an IGBT chip (24). Then, a constant current is allowed to flow from a constant current source (22) through the PTC element (9), and an output voltage of the PTC element (9) is detected by a voltage monitor (23). When a change in output voltage increases, a voltage applied to a gate electrode (6) by a detection circuit is decreased. Since the PTC element (9) is directly arranged onto the IGBT chip (24), the temperature of the IGBT chip (24) can be monitored with high accuracy. Further, since the change in output voltage of the PTC element (9) per 1 °C is large, a highly accurate detection circuit is not necessary, thereby allowing accurate monitoring of the temperature of the IGBT chip (24) even in a noise environment.