-
公开(公告)号：EP0902982B1
公开(公告)日：2002-10-02
申请号：EP97925853.0
申请日：1997-05-20
发明人： KEMMER, Josef , LUTZ, Gerhard , RICHTER, Rainer , STRÜDER, Lothar , ANDRICEK, Ladislav , GEBHART, Thomas
IPC分类号： H01L31/115 , H01L31/118
CPC分类号： H01L31/1185 , H01L31/115
摘要： The invention relates to a strip detector and a process for producing a strip detector for detecting ionising particles and/or radiation. Said strip detector has a silicon substrate which provides mutually spaced n-doped regions and therebetween a p-doped insulation region at least on a substrate surface in the form of strips and voltage supply regions, and a first insulation layer applied to a substrate surface, and metal strips arranged above the n-doped regions. The invention is characterised in that directly above the first insulation layer at least one other insulation layer is provided, and that at least one of the insulation layers is interrupted, in projection over the region, between two adjacent n-doped regions, and the p-doped insulation region has a lateral p-doping agent concentration distribution which provides in the region below the interruption of the interrupted insulation layer a higher doping agent concentration than in the insulation regions directly adjoining the n-doped regions.
-
公开(公告)号：EP0902982A1
公开(公告)日：1999-03-24
申请号：EP97925853.0
申请日：1997-05-20
发明人： KEMMER, Josef , LUTZ, Gerhard , RICHTER, Rainer , STRÜDER, Lothar , ANDRICEK, Ladislav , GEBHART, Thomas
IPC分类号： H01L31
CPC分类号： H01L31/1185 , H01L31/115
摘要： The invention relates to a strip detector and a process for producing a strip detector for detecting ionising particles and/or radiation. Said strip detector has a silicon substrate which provides mutually spaced n-doped regions and therebetween a p-doped insulation region at least on a substrate surface in the form of strips and voltage supply regions, and a first insulation layer applied to a substrate surface, and metal strips arranged above the n-doped regions. The invention is characterised in that directly above the first insulation layer at least one other insulation layer is provided, and that at least one of the insulation layers is interrupted, in projection over the region, between two adjacent n-doped regions, and the p-doped insulation region has a lateral p-doping agent concentration distribution which provides in the region below the interruption of the interrupted insulation layer a higher doping agent concentration than in the insulation regions directly adjoining the n-doped regions.
-
公开(公告)号：EP2619557A1
公开(公告)日：2013-07-31
申请号：EP11761277.0
申请日：2011-08-26
CPC分类号： H01J5/18 , G01T1/2928
摘要： The invention relates to a radiation entry window (10) for a radiation detector (2), in particular for a semiconductor drift detector (2), comprising a flat window element (11), which is at least partially transparent to the radiation to be detected by the radiation detector (2), and comprising a window frame (12) that laterally frames the window element (11), wherein the window frame (12) is made of a semiconductor material and is substantially thicker than the window element (11).
-
公开(公告)号：EP2619557B1
公开(公告)日：2016-05-11
申请号：EP11761277.0
申请日：2011-08-26
CPC分类号： H01J5/18 , G01T1/2928
-
公开(公告)号：EP2174355A1
公开(公告)日：2010-04-14
申请号：EP08773493.5
申请日：2008-06-18
IPC分类号： H01L31/107 , H01L27/144
CPC分类号： H01L31/107 , H01L27/1446
摘要： The invention relates to an avalanche photodiode (1) for detecting radiation, comprising a semiconductor substrate (11), an upper diode layer (15), an oppositely doped, laterally delimited lower diode layer (16), an avalanche region situated between the upper diode layer (15) and the lower diode layer (16), wherein the radiation to be detected triggers an avalanche breakdown in the avalanche region, and also comprising a contact-making layer (12) at the underside (10) of the semiconductor substrate (11), a laterally delimited quenching resistance layer (18) arranged in the semiconductor substrate (11) between the lower diode layer (16) and the contact-making layer (12), wherein the quenching resistance layer (18) quenches the radiation-generated avalanche breakdown in the avalanche region, and also comprising a depletion electrode (15) arranged laterally alongside the laterally delimited lower diode layer (16), such that the depletion electrode (15) depletes the semiconductor substrate (11) laterally alongside the laterally delimited lower diode layer (16), while the quenching resistance layer (18) is screened from the depletion electrode (15) by the lower diode layer (16) and is therefore not depleted.
摘要翻译： 光电二极管（1）具有布置在半导体衬底中的横向窄缓冲电阻层， 阳极层和接触层。 电阻层消除雪崩区域内的辐射产生的雪崩击穿。 耗尽电极被布置在下二极管层的部分侧面，并且对应于掺杂类型被掺杂，使得当电阻层与与电极相对的二极管层屏蔽时，电极消耗衬底横向邻近二极管层 并没有或部分耗尽。
-
-
-
-
搜索结果
5 条记录 (耗时 0.014 秒)
