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17 条记录 (耗时 0.015 秒)

    STREIFENDETEKTOR
    1.
    发明授权
    STREIFENDETEKTOR 失效
    条探测器

    公开(公告)号：EP0902982B1

    公开(公告)日：2002-10-02

    申请号：EP97925853.0

    申请日：1997-05-20

    申请人： Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. ,  KEMMER, Josef, Dr.

    发明人： KEMMER, Josef ,  LUTZ, Gerhard ,  RICHTER, Rainer ,  STRÜDER, Lothar ,  ANDRICEK, Ladislav ,  GEBHART, Thomas

    IPC分类号： H01L31/115 ,  H01L31/118

    CPC分类号： H01L31/1185 ,  H01L31/115

    摘要： The invention relates to a strip detector and a process for producing a strip detector for detecting ionising particles and/or radiation. Said strip detector has a silicon substrate which provides mutually spaced n-doped regions and therebetween a p-doped insulation region at least on a substrate surface in the form of strips and voltage supply regions, and a first insulation layer applied to a substrate surface, and metal strips arranged above the n-doped regions. The invention is characterised in that directly above the first insulation layer at least one other insulation layer is provided, and that at least one of the insulation layers is interrupted, in projection over the region, between two adjacent n-doped regions, and the p-doped insulation region has a lateral p-doping agent concentration distribution which provides in the region below the interruption of the interrupted insulation layer a higher doping agent concentration than in the insulation regions directly adjoining the n-doped regions.

    STREIFENDETEKTOR
    5.
    发明公开
    STREIFENDETEKTOR 失效
    条探测器

    公开(公告)号：EP0902982A1

    公开(公告)日：1999-03-24

    申请号：EP97925853.0

    申请日：1997-05-20

    申请人： Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. ,  KEMMER, Josef, Dr.

    发明人： KEMMER, Josef ,  LUTZ, Gerhard ,  RICHTER, Rainer ,  STRÜDER, Lothar ,  ANDRICEK, Ladislav ,  GEBHART, Thomas

    IPC分类号： H01L31

    CPC分类号： H01L31/1185 ,  H01L31/115

    摘要： The invention relates to a strip detector and a process for producing a strip detector for detecting ionising particles and/or radiation. Said strip detector has a silicon substrate which provides mutually spaced n-doped regions and therebetween a p-doped insulation region at least on a substrate surface in the form of strips and voltage supply regions, and a first insulation layer applied to a substrate surface, and metal strips arranged above the n-doped regions. The invention is characterised in that directly above the first insulation layer at least one other insulation layer is provided, and that at least one of the insulation layers is interrupted, in projection over the region, between two adjacent n-doped regions, and the p-doped insulation region has a lateral p-doping agent concentration distribution which provides in the region below the interruption of the interrupted insulation layer a higher doping agent concentration than in the insulation regions directly adjoining the n-doped regions.

    HALBLEITERSTRUKTUR
    8.
    发明授权
    HALBLEITERSTRUKTUR 有权
    半导体结构

    公开(公告)号：EP1709691B8

    公开(公告)日：2008-10-15

    申请号：EP05700978.9

    申请日：2005-01-17

    申请人： Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V.

    发明人： LECHNER, Peter ,  LUTZ, Gerhard ,  RICHTER, Rainer ,  STRÜDER, Lothar

    IPC分类号： H01L31/10 ,  H01L29/76

    CPC分类号： H01L31/101

    摘要： The invention relates to a semiconductor structure, especially for use in a semiconductor detector. Said semiconductor structure comprises a weakly doped semiconductor substrate (HK) of a first or second doping type, a highly doped drain region (D) of a second doping type, located on a first surface of the semiconductor substrate (HK), a highly doped source region (S) of the second doping type, located on the first surface of the semiconductor substrate (HK), a duct (K) extending between the source region (S) and the drain region (D), a doped inner gate region (IG) of the first doping type, which is at least partially located below the duct (K), and a blow-out contact (CL) for removing charge carriers from the inner gate region (IG). According to the invention, the inner gate region (IG) extends in the semiconductor substrate (HK) at least partially up to the blow-out contact (CL) and the blow-out contact (CL) is located on the drain end relative to the source region (S).

    STRAHLUNGSDETEKTOR ZUR DETEKTION INTENSITATSARMER STRAHLUNG MITTELS LAWINENVERTARKUNG
    9.
    发明公开
    STRAHLUNGSDETEKTOR ZUR DETEKTION INTENSITATSARMER STRAHLUNG MITTELS LAWINENVERTARKUNG 有权
    辐射检测器，检测低强度辐射雪崩增益和其运行程序

    公开(公告)号：EP1886347A1

    公开(公告)日：2008-02-13

    申请号：EP06753689.6

    申请日：2006-05-17

    申请人： Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V.

    发明人： LUTZ, Gerhard ,  STRUEDER, Lothar ,  HOLL, Peter

    IPC分类号： H01L27/148 ,  H01L27/146

    CPC分类号： H01L29/76816 ,  H01L27/14812 ,  H01L29/76833

    摘要： The invention relates to a radiation detector (1) for detecting low-intensity radiation, especially for detecting individual photons. Said radiation detector comprises a plurality of rows of image cells (5) with respective pluralities of image cells (5) disposed one after the other and respective signal outputs (6). The radiation to be detected generates signal charge carriers in the individual image cells (5), said charge carriers being transported along the rows of image cells to the respective signal output (6). A plurality of output amplifiers (7) are connected in parallel to one of the signal outputs each of the individual image cell columns and amplify the signal charge carriers. The invention is characterized in that the output amplifiers (7) comprise respective avalanche amplifiers (8).