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公开(公告)号：EP2174355A1
公开(公告)日：2010-04-14
申请号：EP08773493.5
申请日：2008-06-18
IPC分类号： H01L31/107 , H01L27/144
CPC分类号： H01L31/107 , H01L27/1446
摘要： The invention relates to an avalanche photodiode (1) for detecting radiation, comprising a semiconductor substrate (11), an upper diode layer (15), an oppositely doped, laterally delimited lower diode layer (16), an avalanche region situated between the upper diode layer (15) and the lower diode layer (16), wherein the radiation to be detected triggers an avalanche breakdown in the avalanche region, and also comprising a contact-making layer (12) at the underside (10) of the semiconductor substrate (11), a laterally delimited quenching resistance layer (18) arranged in the semiconductor substrate (11) between the lower diode layer (16) and the contact-making layer (12), wherein the quenching resistance layer (18) quenches the radiation-generated avalanche breakdown in the avalanche region, and also comprising a depletion electrode (15) arranged laterally alongside the laterally delimited lower diode layer (16), such that the depletion electrode (15) depletes the semiconductor substrate (11) laterally alongside the laterally delimited lower diode layer (16), while the quenching resistance layer (18) is screened from the depletion electrode (15) by the lower diode layer (16) and is therefore not depleted.
摘要翻译： 光电二极管（1）具有布置在半导体衬底中的横向窄缓冲电阻层， 阳极层和接触层。 电阻层消除雪崩区域内的辐射产生的雪崩击穿。 耗尽电极被布置在下二极管层的部分侧面，并且对应于掺杂类型被掺杂，使得当电阻层与与电极相对的二极管层屏蔽时，电极消耗衬底横向邻近二极管层 并没有或部分耗尽。
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公开(公告)号：EP1709691B8
公开(公告)日：2008-10-15
申请号：EP05700978.9
申请日：2005-01-17
CPC分类号： H01L31/101
摘要： The invention relates to a semiconductor structure, especially for use in a semiconductor detector. Said semiconductor structure comprises a weakly doped semiconductor substrate (HK) of a first or second doping type, a highly doped drain region (D) of a second doping type, located on a first surface of the semiconductor substrate (HK), a highly doped source region (S) of the second doping type, located on the first surface of the semiconductor substrate (HK), a duct (K) extending between the source region (S) and the drain region (D), a doped inner gate region (IG) of the first doping type, which is at least partially located below the duct (K), and a blow-out contact (CL) for removing charge carriers from the inner gate region (IG). According to the invention, the inner gate region (IG) extends in the semiconductor substrate (HK) at least partially up to the blow-out contact (CL) and the blow-out contact (CL) is located on the drain end relative to the source region (S).
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公开(公告)号：EP0902982B1
公开(公告)日：2002-10-02
申请号：EP97925853.0
申请日：1997-05-20
发明人： KEMMER, Josef , LUTZ, Gerhard , RICHTER, Rainer , STRÜDER, Lothar , ANDRICEK, Ladislav , GEBHART, Thomas
IPC分类号： H01L31/115 , H01L31/118
CPC分类号： H01L31/1185 , H01L31/115
摘要： The invention relates to a strip detector and a process for producing a strip detector for detecting ionising particles and/or radiation. Said strip detector has a silicon substrate which provides mutually spaced n-doped regions and therebetween a p-doped insulation region at least on a substrate surface in the form of strips and voltage supply regions, and a first insulation layer applied to a substrate surface, and metal strips arranged above the n-doped regions. The invention is characterised in that directly above the first insulation layer at least one other insulation layer is provided, and that at least one of the insulation layers is interrupted, in projection over the region, between two adjacent n-doped regions, and the p-doped insulation region has a lateral p-doping agent concentration distribution which provides in the region below the interruption of the interrupted insulation layer a higher doping agent concentration than in the insulation regions directly adjoining the n-doped regions.
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公开(公告)号：EP3942619A1
公开(公告)日：2022-01-26
申请号：EP20724475.7
申请日：2020-05-06
发明人： BÄHR, Alexander , LECHNER, Peter , NINKOVIC, Jelena , RICHTER, Rainer , SCHOPPER, Florian , TREIS, Johannes
IPC分类号： H01L31/113 , H01L31/115
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公开(公告)号：EP1709691B1
公开(公告)日：2008-07-23
申请号：EP05700978.9
申请日：2005-01-17
CPC分类号： H01L31/101
摘要： The invention relates to a semiconductor structure, especially for use in a semiconductor detector. Said semiconductor structure comprises a weakly doped semiconductor substrate (HK) of a first or second doping type, a highly doped drain region (D) of a second doping type, located on a first surface of the semiconductor substrate (HK), a highly doped source region (S) of the second doping type, located on the first surface of the semiconductor substrate (HK), a duct (K) extending between the source region (S) and the drain region (D), a doped inner gate region (IG) of the first doping type, which is at least partially located below the duct (K), and a blow-out contact (CL) for removing charge carriers from the inner gate region (IG). According to the invention, the inner gate region (IG) extends in the semiconductor substrate (HK) at least partially up to the blow-out contact (CL) and the blow-out contact (CL) is located on the drain end relative to the source region (S).
摘要翻译： 本发明涉及一种特别用于半导体探测器的半导体结构。 所述半导体结构包括第一或第二掺杂类型的弱掺杂半导体衬底（HK），位于半导体衬底（HK）的第一表面上的第二掺杂类型的高掺杂漏极区域（D），高度掺杂 位于半导体衬底（HK）的第一表面上的第二掺杂类型的源极区（S），在源极区（S）和漏极区（D）之间延伸的导管（K），掺杂的内部栅极区 （IG），以及用于从内部栅极区域（IG）去除电荷载流子的吹出接触（CL），所述第一掺杂类型至少部分地位于管道（K）下方。 根据本发明，内部栅极区（IG）在半导体衬底（HK）中至少部分地延伸到吹出接触件（CL）并且吹出接触件（CL）相对于漏极端位于漏极端上 源区（S）。
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公开(公告)号：EP0719455B1
公开(公告)日：1999-06-23
申请号：EP94926785.0
申请日：1994-09-15
发明人： KEMMER, Josef , LUTZ, Gerhard , RICHTER, Rainer
IPC分类号： H01L27/146 , H01L31/112 , H01L31/113
CPC分类号： H01L27/1443 , H01L29/788
摘要： The description relates to a semiconductor structure consisting of a single-pole transistor with a drain, a source, a reset contact, a top gate and a potentially floating layer (internal gate), forming at least one gate of the single-pole transistor. The invention is characterised in that the reset contact is of the same type of conductivity as the potentially floating layer and is separated therefrom by a potentially fixed region of a different type of conductivity.
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公开(公告)号：EP0902982A1
公开(公告)日：1999-03-24
申请号：EP97925853.0
申请日：1997-05-20
发明人： KEMMER, Josef , LUTZ, Gerhard , RICHTER, Rainer , STRÜDER, Lothar , ANDRICEK, Ladislav , GEBHART, Thomas
IPC分类号： H01L31
CPC分类号： H01L31/1185 , H01L31/115
摘要： The invention relates to a strip detector and a process for producing a strip detector for detecting ionising particles and/or radiation. Said strip detector has a silicon substrate which provides mutually spaced n-doped regions and therebetween a p-doped insulation region at least on a substrate surface in the form of strips and voltage supply regions, and a first insulation layer applied to a substrate surface, and metal strips arranged above the n-doped regions. The invention is characterised in that directly above the first insulation layer at least one other insulation layer is provided, and that at least one of the insulation layers is interrupted, in projection over the region, between two adjacent n-doped regions, and the p-doped insulation region has a lateral p-doping agent concentration distribution which provides in the region below the interruption of the interrupted insulation layer a higher doping agent concentration than in the insulation regions directly adjoining the n-doped regions.
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公开(公告)号：EP0719455A1
公开(公告)日：1996-07-03
申请号：EP94926785.0
申请日：1994-09-15
发明人： KEMMER, Josef , LUTZ, Gerhard , RICHTER, Rainer
CPC分类号： H01L27/1443 , H01L29/788
摘要： The description relates to a semiconductor structure consisting of a single-pole transistor with a drain, a source, a reset contact, a top gate and a potentially floating layer (internal gate), forming at least one gate of the single-pole transistor. The invention is characterised in that the reset contact is of the same type of conductivity as the potentially floating layer and is separated therefrom by a potentially fixed region of a different type of conductivity.
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公开(公告)号：EP1490911B1
公开(公告)日：2008-07-16
申请号：EP03714890.5
申请日：2003-03-27
发明人： STRÜDER, Lothar , LUTZ, Gerhard , RICHTER, Rainer
IPC分类号： H01L31/0224 , H01L31/115
CPC分类号： H01L31/115 , G01T1/2928 , H01L27/14603 , H01L31/02002 , H01L31/022408 , H01L31/03529 , Y02E10/50
摘要： The invention relates to a conductor crossover for a semiconductor detector, particularly for a drift detector for conducting X-ray spectroscopy. The conductor crossover comprises at least two doped semiconductor electrodes (2), which are placed inside a semiconductor substrate (1), at least one connecting conductor (M), which is guided over the semiconductor electrodes (2), and a first insulating layer (Ox). An intermediate electrode (L) is situated between the connecting conductor (M) and the first insulation layer (Ox). Said intermediate electrode overlaps the area of the semiconductor substrate (1) between the semiconductor electrodes (2) and is electrically insulated from the connecting conductor (M) by at least one additional insulation layer (I). The invention also relates to a drift detector equipped with a conductor crossover of this type and to a detector arrangement for conducting X-ray spectroscopy.
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公开(公告)号：EP1709691A2
公开(公告)日：2006-10-11
申请号：EP05700978.9
申请日：2005-01-17
CPC分类号： H01L31/101
摘要： The invention relates to a semiconductor structure, especially for use in a semiconductor detector. Said semiconductor structure comprises a weakly doped semiconductor substrate (HK) of a first or second doping type, a highly doped drain region (D) of a second doping type, located on a first surface of the semiconductor substrate (HK), a highly doped source region (S) of the second doping type, located on the first surface of the semiconductor substrate (HK), a duct (K) extending between the source region (S) and the drain region (D), a doped inner gate region (IG) of the first doping type, which is at least partially located below the duct (K), and a blow-out contact (CL) for removing charge carriers from the inner gate region (IG). According to the invention, the inner gate region (IG) extends in the semiconductor substrate (HK) at least partially up to the blow-out contact (CL) and the blow-out contact (CL) is located on the drain end relative to the source region (S).
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