Chemical vapor deposition system including dedicated cleaning gas injection
    3.
    发明公开
    Chemical vapor deposition system including dedicated cleaning gas injection 失效
    用于化学沉积从气相与清洁气体的单独注射的装置

    公开(公告)号:EP0790635A3

    公开(公告)日:1998-04-15

    申请号:EP97200281.0

    申请日:1997-02-05

    IPC分类号: H01J37/32

    摘要: A plasma-enhanced chemical vapor deposition system (10) includes a number of process gas injection tubes (128) and at least one dedicated clean gas injection tube (130). A plasma is used to periodically clean the interior surfaces of the deposition chamber. The cleaning is made more rapid and effective by introducing the clean gas through the dedicated clean gas injection tube. In this manner the clean gas can be introduced at a relatively high flow rate without detracting from the cleaning of the interior surfaces of the process gas injection tubes. As a separate aspect of this invention, a high-frequency signal is applied to both terminals of the coil (102) during the cleaning process. This produces a plasma, mainly by capacitive coupling, which has a shape and uniformity that are well-suited to cleaning the surfaces of the deposition chamber.

    摘要翻译: 等离子体增强化学气相沉积系统(10)包括多个处理气体注射管(128)和至少一个专用清洁气体注入管(130)。 等离子体被用来定期清洗沉积室的内表面。 所述清洁由通过经由专用清洁气体注入管引入清洁气体更迅速和有效。 以这种方式,清洁气体可以以相对高的流速来引入不脱离工艺气体喷射管的内表面的清洁减损。 作为本发明的一个单独方面,高频信号在清洁过程中施加到线圈(102)的两个端子。 这产生了等离子,主要是通过电容耦合,其具有形状和均匀性也都非常适合于清洁沉积室的表面上。