公开(公告)号：EP0598424A3

公开(公告)日：1996-05-15

申请号：EP93202864.0

申请日：1993-10-11

申请人： NOVELLUS SYSTEMS, INC.

发明人： van Schravendijk, Bart J. ,  Burkhart, Christopher W. ,  Santiago, Tito H. ,  Pomeroy, Charles E. ,  Lind, Jeffrey W.

IPC分类号： C23C16/44 ,  C23C16/50 ,  B01D19/00

CPC分类号： B01D19/0031 ,  C23C16/4402 ,  C23C16/448

摘要： An apparatus and a method for delivering a liquid are disclosed. The liquid (113) is contained in a vessel (111) is subjected to a pressurized gas (110). Any pressurized gas dissolved in the liquid is removed in a degas module (115) by passing the liquid through a gas permeable tube (120) subjected to a pressure differential. Then the liquid is dispensed by a liquid mass flow controller (122).

摘要翻译： 公开了用于输送液体的装置和方法。 包含在容器中的液体经受加压气体。 溶解在液体中的任何加压气体通过使液体通过经受压差的气体渗透管而在脱气组件中被去除。 然后液体由液体质量流量控制器分配。

公开(公告)号：EP0467623B1

公开(公告)日：1996-03-13

申请号：EP91306394.7

申请日：1991-07-15

申请人： NOVELLUS SYSTEMS, INC.

发明人： Van den Ven, Everhardus P. ,  Broadbent, Eliot K. ,  Benzing, Jeffrey C. ,  Chin, Barry L. ,  Burkhart, Christopher W.

IPC分类号： C23C16/54 ,  C23C16/04 ,  C23C16/44 ,  H01L21/00

CPC分类号： C23C16/45521 ,  C23C16/04 ,  C23C16/455 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/6838 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771 ,  Y10T29/41

公开(公告)号：EP0492992B1

公开(公告)日：1996-02-28

申请号：EP91311811.3

申请日：1991-12-19

申请人： NOVELLUS SYSTEMS, INC.

发明人： Miller, Kenneth C. ,  Broadbent, Eliot K.

IPC分类号： H01J37/34

CPC分类号： H01J37/3497 ,  H01J37/3408 ,  H01J37/3452 ,  H01J37/3455

公开(公告)号：EP0596551A1

公开(公告)日：1994-05-11

申请号：EP93202903.6

申请日：1993-10-15

申请人： NOVELLUS SYSTEMS, INC.

发明人： Benzing, Jeffrey C. ,  Broadbent, Eliot K. ,  Rough, J. Kirkwood H.

IPC分类号： H01J37/32 ,  H05H1/46

CPC分类号： H01J37/321 ,  H05H1/46

摘要： An induction plasma source for integrated circuit fabrication includes a hemispherically shaped induction coil (18) in an expanding spiral pattern about the vacuum chamber (30) containing a semiconductor wafer supported by a platen (40). The windings of the induction coil follow the contour of a hemispherically shaped quartz bell jar, which holds the vacuum. The power source is a low frequency rf source (410) having a frequency of about 450 KHz and a power in the range of 200-2000 watts, and the pressure is a low pressure of about 0.1-100 mTorr. A high frequency rf source (420) independently adjusts the bias voltage on the wafer.

摘要翻译： 用于集成电路制造的感应等离子体源包括围绕真空室（30）的扩展螺旋图案的半球形感应线圈（18），其包含由压板（40）支撑的半导体晶片。 感应线圈的绕组遵循保持真空的半球形石英钟罩的轮廓。 电源是具有约450KHz的频率和200-2000瓦特的功率的低频rf源（410），并且压力是约0.1-100mTorr的低压。 高频RF源（420）独立地调节晶片上的偏置电压。

公开(公告)号：EP2562796A2

公开(公告)日：2013-02-27

申请号：EP12181659.9

申请日：2012-08-24

申请人： Novellus Systems, Inc.

发明人： Shaviv, Roey ,  Ostrowski, Kirk ,  Cheung, David ,  Park, Joon ,  Thedjoisworo, Bayu ,  Lord, Patrick J.

IPC分类号： H01L21/311

CPC分类号： H01L21/31138 ,  G03F7/427 ,  H01J37/32449 ,  H01J37/32724

摘要： Provided herein are methods and apparatus of hydrogen-based photoresist strip operations that reduce dislocations in a silicon wafer or other substrate. According to various embodiments, the hydrogen-based photoresist strip methods can employ one or more of the following techniques: 1) minimization of hydrogen budget by using short processes with minimal overstrip duration, 2) providing dilute hydrogen, e.g., 2% - 16% hydrogen concentration, 3) minimization of material loss by controlling process conditions and chemistry, 4) using a low temperature resist strip, 5) controlling implant conditions and concentrations, and 6) performing one or more post-strip venting processes. Apparatus suitable to perform the photoresist strip methods are also provided.

摘要翻译： 本文提供了减少硅晶片或其它基板中的位错的氢基光刻胶剥离操作的方法和装置。 根据各种实施方案，氢基光刻胶剥离方法可以采用以下一种或多种技术：1）通过使用具有最小超标时间的短过程来最小化氢预算，2）提供稀氢，例如2％-16％ 氢气浓度，3）通过控制工艺条件和化学反应来最小化材料损耗，4）使用低温抗蚀剂条，5）控制植入物条件和浓度，以及6）执行一个或多个后带通风过程。 还提供了适用于执行光刻胶剥离方法的设备。

公开(公告)号：EP2259303A3

公开(公告)日：2012-11-28

申请号：EP10164594.3

申请日：2010-06-01

申请人： Novellus Systems, Inc.

发明人： Yu, Jengyi ,  Wu, Hui-Jung ,  Dixit, Girish ,  Van Schravendijk, Bart ,  Subramonium, Pramod ,  Jiang, Gengwei ,  Antonelli, George Andrew ,  O`Loughlin, Jennifer

IPC分类号： H01L21/768 ,  H01L21/02

CPC分类号： H01L21/76834 ,  H01L21/02074 ,  H01L21/76832 ,  H01L21/76849 ,  H01L21/76883 ,  H01L21/76888

摘要： Adhesive layers residing at an interface between metal lines and dielectric diffusion barrier (or etch stop) layers are used to improve electromigration performance of interconnects. Adhesion layers are formed by depositing a precursor layer of metal-containing material (e.g., material containing A1, Ti, Ca, Mg, etc.) over an exposed copper line, and converting the precursor layer to a passivated layer (e.g., nitridized layer). For example, a substrate containing exposed copper line having exposed Cu-O bonds is contacted with trimethylaluminum to form a precursor layer having A1-O bonds and A1-C bonds on copper surface. The precursor layer is then treated to remove residual organic substituents and to form A1-N, A1-H bonds or both. The treatment can include direct plasma treatment, remote plasma treatment, UV-treatment, and thermal treatment with a gas such as NH 3 , H 2 , N 2 , and mixtures thereof. A dielectric diffusion barrier layer is then deposited.

公开(公告)号：EP0823279A2

公开(公告)日：1998-02-11

申请号：EP97113585.0

申请日：1997-08-06

申请人： Novellus Systems, Inc.

发明人： Aitchison, Kenneth A.

IPC分类号： B01D53/46 ,  B01D53/86 ,  B01J15/00 ,  B01J19/12 ,  B01J19/08 ,  B01J19/24

CPC分类号： C23C16/4412 ,  B01D53/005 ,  B01J15/005 ,  B01J19/087 ,  B01J19/126 ,  B01J2219/0894 ,  B01J2219/1227 ,  Y02C20/30 ,  Y02P70/605

摘要： A method and apparatus for removing gas species which can be deposited thermally from a semiconductor process exhaust gas is provided. To treat the exhaust gas, an exhaust gas reactor comprising an artificial substrate which is heated is used. The artificial substrate is a structure upon which high temperature chemical vapor deposition (HTCVD) reaction product is deposited. In particular, the HTCVD reaction product is deposited by contacting the exhaust gas with the heated artificial substrate.

摘要翻译： 本发明提供一种用于去除可从半导体工艺的废气来沉积热气体物质的方法和装置。 为了处理排气以排出气体反应器的人工底物，包括所有的被加热时使用。 人造基底是在其高温化学气相沉积（HTCVD）反应产物沉积的结构。 特别地，HTCVD反应产物是通过用加热的人工基板接触的排气沉积。

公开(公告)号：EP0815953A2

公开(公告)日：1998-01-07

申请号：EP97110778.4

申请日：1997-07-01

申请人： Novellus Systems, Inc.

发明人： Logan, Mark A.

IPC分类号： B05D7/24

CPC分类号： B05D1/62

摘要： In accordance with the invention, a method of depositing substituted fluorocarbon polymeric layers exhibiting a high degree of cross-linking is presented. Formation of a substituted fluorocarbon polymeric layer includes placing a substrate into a reactor and, while maintaining the reactor pressure below 100 torr, introducing a process gas into the reactor. Optionally, the substrate is biased. The process gas is then ionized thereby depositing the substituted fluorocarbon polymeric layer on the substrate.

摘要翻译： 根据本发明，提出了沉积具有高度交联度的取代氟碳聚合物层的方法。 取代的碳氟聚合物层的形成包括将基底放置在反应器中，并且在保持反应器压力低于100托的同时，将工艺气体引入反应器。 任选地，衬底被偏置。 然后将工艺气体电离，从而将取代的碳氟化合物聚合物层沉积在基底上。

公开(公告)号：EP0598424A2

公开(公告)日：1994-05-25

申请号：EP93202864.0

申请日：1993-10-11

申请人： NOVELLUS SYSTEMS, INC.

发明人： van Schravendijk, Bart J. ,  Burkhart, Christopher W. ,  Santiago, Tito H. ,  Pomeroy, Charles E. ,  Lind, Jeffrey W.

IPC分类号： C23C16/44 ,  C23C16/50 ,  B01D19/00

CPC分类号： B01D19/0031 ,  C23C16/4402 ,  C23C16/448

摘要： An apparatus and a method for delivering a liquid are disclosed. The liquid (113) is contained in a vessel (111) is subjected to a pressurized gas (110). Any pressurized gas dissolved in the liquid is removed in a degas module (115) by passing the liquid through a gas permeable tube (120) subjected to a pressure differential. Then the liquid is dispensed by a liquid mass flow controller (122).

公开(公告)号：EP2618365A3

公开(公告)日：2014-05-14

申请号：EP13152046.2

申请日：2013-01-21

申请人： Novellus Systems, Inc.

发明人： Hausmann, Dennis ,  Henri, Jon ,  Van Schravendijk, Bart ,  Srinivasan, Easwar

IPC分类号： H01L21/02 ,  H01L21/318 ,  C23C16/34 ,  C23C16/505

CPC分类号： C23C16/345 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45557 ,  C23C16/505 ,  C23C16/52 ,  C23C16/54 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L29/7843

摘要： Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and/or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor. In some embodiments, the methods involve chemical vapor deposition (CVD).