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公开(公告)号：EP0432914A1
公开(公告)日：1991-06-19
申请号：EP90312542.5
申请日：1990-11-16
摘要： A method for controlling an oxygen concentration of a single crystal which is pulled up in a Czochralski-method type single crystal pulling apparatus having a hermetical chamber in which the single crystal is pulled up and an inert gas supply and exhaust system by means of which an inert gas is supplied to the hermetical chamber and exhausted therefrom; the method being characterized in that the pneumatic pressure in the hermetical chamber and the supply rate of the inert gas are controlled in accordance with a prepared control pattern with respect to the proportion of the length of the as-grown crystal to the aimed final length thereof or with respect to the passage of time.
摘要翻译： 其在直拉法式单晶拉具有气密腔室，其中所述单晶被上拉，并借助于该惰性气体供给和排气系统提拉装置为单晶的氧浓度的控制的方法，所有 惰性气体被供给至密闭室，并从那里排出; 该方法的特征在没有在气密腔室和惰性气体的供给速度的气动压力在雅舞蹈相对于它们的控制与准备的控制图案的作为生长的晶体的长度的比例到目标最终长度 或相对于时间的流逝。
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公开(公告)号：EP0781870A2
公开(公告)日：1997-07-02
申请号：EP96309330.7
申请日：1996-12-20
IPC分类号： C30B15/14
CPC分类号： C30B15/14 , Y10S117/90 , Y10T117/1004 , Y10T117/1008
摘要： A crystal pulling apparatus is disclosed which employs the Czochralski method. The crystal pulling apparatus is operated while a heater for heating a material melt in a crucible is controlled by the main controller of a main system. When maintenance of a heating state is disabled for some reason, a relay of a signal changeover circuit is switched so as to maintain the heating state under control of the backup controller of a backup system, thereby maintaining the material melt in a molten state. Thus, even when it becomes impossible for the main system to heat the material melt within the crucible, the material melt can be prevented from becoming solidified.
摘要翻译： 公开了采用Czochralski法的晶体拉制装置。 在通过主系统的主控制器控制用于加热坩埚中的材料熔化的加热器的同时操作晶体牵引装置。 当由于某种原因禁用加热状态的维持时，切换信号切换电路的继电器，以便在备用系统的备用控制器的控制下保持加热状态，从而将材料熔体保持在熔融状态。 因此，即使主系统不可能在坩埚内加热材料熔体，也可以防止材料熔融变硬化。
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公开(公告)号：EP0498653B1
公开(公告)日：1996-05-01
申请号：EP92301018.5
申请日：1992-02-06
CPC分类号： G01G9/00 , C30B15/28 , G01B11/105 , Y10T117/1004
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公开(公告)号：EP0498653A3
公开(公告)日：1993-09-01
申请号：EP92301018.5
申请日：1992-02-06
CPC分类号： G01G9/00 , C30B15/28 , G01B11/105 , Y10T117/1004
摘要： A method for measuring a diameter of a single crystal ingot pulled up in a single crystal pulling apparatus comprising:
calculating the weight of the pulled-up single crystal, calculating the descent amount of the melt surface relative to the crucible wall from the calculated pulled-up weight of the grown single crystal, and then either correcting the value of the ingot diameter actually measured by the optical sensor in response to the descent amount of the melt surface level or raising the crucible by an amount equal to the descent amount of the surface level.-
5.发明公开Apparatus for adjusting initial position of melt surface 失效Einrichtung zur Einstellung der Ausgangsposition einerSchmelzenoberfläche。
公开(公告)号：EP0301998A1
公开(公告)日：1989-02-01
申请号：EP88710019.6
申请日：1988-07-21
CPC分类号： C30B15/26 , C30B15/20 , Y10T117/1008
摘要： A melt-surface initial position adjusting apparatus which is suitable for use in a monocrystal growing system employing the Czochralski method to adjust the vertical position of the melt surface before the growing of a monocrystal. The apparatus can ensure a highly precise measurement of a crystal-diameter measuring device, thereby enabling a reduction in the costs of producing a monocrystal bar. Before the growing of a crystal, the vertical position (H) of the surface (16A) of a melt within a crucible is measured. The crucible is moved vertically on the basis of the measured value in such a manner as to maintain the distance (L) between the melt surface (16A) and an image sensor (28) for measuring the crystal diameter at a predetermined value.
摘要翻译： 一种熔融表面初始位置调节装置，其适用于采用切克劳斯基法的单晶生长系统，以在单晶生长之前调节熔体表面的垂直位置。 该装置可以确保晶体直径测量装置的高精度测量，从而能够降低制造单晶棒的成本。 在晶体生长之前，测量坩埚内熔体表面（16A）的垂直位置（H）。 坩埚基于测量值垂直移动，以保持熔融表面（16A）和用于测量晶体直径之间的预定值的图像传感器（28）之间的距离（L）。
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公开(公告)号：EP0432914B1
公开(公告)日：1995-05-17
申请号：EP90312542.5
申请日：1990-11-16
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公开(公告)号：EP0301998B1
公开(公告)日：1992-09-30
申请号：EP88710019.6
申请日：1988-07-21
CPC分类号： C30B15/26 , C30B15/20 , Y10T117/1008
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公开(公告)号：EP0265805A3
公开(公告)日：1991-01-16
申请号：EP87115232.8
申请日：1987-10-17
CPC分类号： G01B11/08 , Y10T117/1004 , Y10T117/1012
摘要： An apparatus for measuring the diameter of a crystal in which an optical sensor scans along a sensing line which crosses at one point a luminous ring formed at the interface between a crystalline rod and a melt; the picture element position corresponding to a maximum luminance is discriminated when the optical sensor scans; the mean value of the picture element position is calculated over at least one revolution of the crystalline rod; and the diameter D of the crystalline rod at a portion thereof interfacing with the melt is calculated from the mean value and the level of the melt. Similarly, the minimum crystal diameter can be calculated by obtaining the picture element position corresponding to the minimum crystal diameter instead of obtaining the mean of the picture element position.
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公开(公告)号：EP0285943A1
公开(公告)日：1988-10-12
申请号：EP88104931.6
申请日：1988-03-26
IPC分类号： C30B15/26
CPC分类号： C30B15/26
摘要： Disclosed is a method of controlling the diameter of a single crystal produced by the Czochralski method. The diameter of a tapered portion (32B) of the single crystal (32) is controlled by controlling the temperature of a melt (16) in a crucible (12) and the rotational speed of the crucible. The control range of the rotational speed of the crucible is made narrower as the diameter of the tapered portion approaches closer to that of a body portion (32C), and the rotational speed is made constant while the body portion is grown.
摘要翻译： 公开了一种通过切克劳斯基法生产的单晶的直径控制方法。 通过控制坩埚（12）中的熔体（16）的温度和坩埚的转速来控制单晶（32）的锥形部分（32B）的直径。 随着锥形部分的直径接近于主体部分（32C）的直径，使坩埚的旋转速度的控制范围变窄，并且在身体部分生长时使旋转速度恒定。
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