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    Substrate Dividing Method
    1.
    发明公开
    Substrate Dividing Method 有权
    Verfahren zum Vereinzelnen eines底物

    公开(公告)号：EP2194575A2

    公开(公告)日：2010-06-09

    申请号：EP10157833.4

    申请日：2003-03-06

    申请人： Hamamatsu Photonics K.K.

    发明人： FUJII, Yoshimaro ,  FUKUYO, Fumitsugu ,  FUKUMITSU, Kenshi ,  UCHIYAMA, Naoki

    IPC分类号： H01L21/78 ,  B23K26/40

    CPC分类号： H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/063 ,  B23K26/40 ,  B23K26/4075 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

    摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

    摘要翻译： 一种衬底分割方法，其可以在防止碎裂和破裂的同时，对衬底进行薄层化和分割。 该基板分割方法包括以下步骤：将具有形成有功能元件19的正面3的半导体基板1照射在基板内，同时将聚光点定位在基板内，形成包含熔融处理区域的改质区域 在半导体衬底1内的多光子吸收，并且使包括熔融处理区域的改性区域形成切割起点区域; 在形成用于切割的起点区域的步骤之后，研磨半导体衬底1的后表面21，使得半导体衬底1达到预定厚度。

    Substrate dividing method
    4.
    发明公开
    Substrate dividing method 有权
    Methode zur Trennung von Substraten

    公开(公告)号：EP1635390A2

    公开(公告)日：2006-03-15

    申请号：EP05077644.2

    申请日：2003-03-06

    申请人： HAMAMATSU PHOTONICS K. K.

    发明人： Fujii, Yoshimaro ,  Fukuyo, Fumitsugu ,  Fukumitsu, Kenshi ,  Uchiyama, Naoki

    IPC分类号： H01L21/78

    CPC分类号： H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/063 ,  B23K26/40 ,  B23K26/4075 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

    摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

    摘要翻译： 一种衬底分割方法，其可以在防止碎裂和破裂的同时，对衬底进行薄层化和分割。 该基板分割方法包括以下步骤：将具有形成有功能元件19的正面3的半导体基板1照射在基板内，同时将聚光点定位在基板内，形成包含熔融处理区域的改质区域 在半导体衬底1内的多光子吸收，并且使包括熔融处理区域的改性区域形成切割起点区域; 在形成用于切割的起点区域的步骤之后，研磨半导体衬底1的后表面21，使得半导体衬底1达到预定厚度。

    Substrate Dividing Method
    7.
    发明授权
    Substrate Dividing Method 有权
    基板分割方法

    公开(公告)号：EP2194575B1

    公开(公告)日：2017-08-16

    申请号：EP10157833.4

    申请日：2003-03-06

    申请人： Hamamatsu Photonics K.K.

    发明人： FUJII, Yoshimaro ,  FUKUYO, Fumitsugu ,  FUKUMITSU, Kenshi ,  UCHIYAMA, Naoki

    IPC分类号： H01L21/78 ,  B23K26/40

    CPC分类号： H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/063 ,  B23K26/40 ,  B23K26/4075 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

    摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

    摘要翻译： 一种衬底分割方法，其能够在防止发生碎裂和破裂的同时使衬底变薄和分割。 该基板分割方法包括以下步骤：将具有由功能器件19形成的前表面3的半导体基板1用激光照射，同时将聚光点定位在基板内，从而形成包括应有的熔融处理区域 使半导体基板1内的多光子吸收，使包含熔融处理区域的改质区域形成切断的起点区域， 以及在形成用于切割的起点区域的步骤之后研磨半导体衬底1的背面21，使得半导体衬底1达到预定厚度。

    Substrate dividing method
    9.
    发明公开
    Substrate dividing method 有权
    底物划分方法

    公开(公告)号：EP1632997A3

    公开(公告)日：2006-05-03

    申请号：EP05077646.7

    申请日：2003-03-06

    申请人： HAMAMATSU PHOTONICS K. K.

    发明人： Fujii, Yoshimaro ,  Fukuyo, Fumitsugu ,  Fukumitsu, Kenshi ,  Uchiyama, Naoki

    IPC分类号： H01L21/78

    CPC分类号： H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/063 ,  B23K26/40 ,  B23K26/4075 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

    摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

    摘要翻译： 一种衬底分割方法，其能够在防止发生碎裂和破裂的同时使衬底变薄和分割。 该基板分割方法包括以下步骤：将具有由功能器件19形成的前表面3的半导体基板1用激光照射，同时将聚光点定位在基板内，从而形成包括应有的熔融处理区域 使半导体基板1内的多光子吸收，使包含熔融处理区域的改质区域形成切断的起点区域， 以及在形成用于切割的起点区域的步骤之后研磨半导体衬底1的背面21，使得半导体衬底1达到预定厚度。