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公开(公告)号：EP2388100A1
公开(公告)日：2011-11-23
申请号：EP09837545.4
申请日：2009-12-04
IPC分类号： B23K26/04 , B23K26/03 , B23K26/06 , B23K26/073 , B23K26/08
CPC分类号： B23K26/0732 , B23K26/0617 , B23K26/073 , B23K26/0738 , B23K26/08
摘要： A cylindrical lens (4) diverges a laser beam (L1) in the Y-axis direction (i.e., within the YZ plane) but neither diverges nor converges it in the X-axis direction (i.e., within the ZX plane). An objective lens (5) converges the laser beam (L1) emitted from the cylindrical lens (4) into a point P1 in the Y-axis direction and into a point P2 in the X-axis direction. A pair of knife edges (13) adjust the divergence angle (θ) of the laser beam (L1) incident on the objective lens (5) in the Y-axis direction. As a consequence, the cross section of the laser beam (L1) becomes an elongated form extending in the Y-axis direction at the point P2, while the maximum length in the Y-axis direction is regulated. Therefore, locating the point P2 on the front face of a work (S) can form an elongated working area extending in the Y-axis direction by a desirable length on the front face of the work (S).
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公开(公告)号：EP2194575A2
公开(公告)日：2010-06-09
申请号：EP10157833.4
申请日：2003-03-06
CPC分类号： H01L21/78 , B23K26/0057 , B23K26/0622 , B23K26/063 , B23K26/40 , B23K26/4075 , B23K2203/50 , B28D5/00 , B28D5/0011 , H01L21/268 , H01L21/304 , H01L21/30604 , H01L21/6836 , H01L21/76894 , H01L23/544 , H01L23/562 , H01L2221/68327 , H01L2221/68336 , H01L2223/5446 , H01L2924/00 , H01L2924/0002
摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.
摘要翻译： 一种衬底分割方法，其可以在防止碎裂和破裂的同时，对衬底进行薄层化和分割。 该基板分割方法包括以下步骤：将具有形成有功能元件19的正面3的半导体基板1照射在基板内，同时将聚光点定位在基板内，形成包含熔融处理区域的改质区域 在半导体衬底1内的多光子吸收，并且使包括熔融处理区域的改性区域形成切割起点区域; 在形成用于切割的起点区域的步骤之后，研磨半导体衬底1的后表面21，使得半导体衬底1达到预定厚度。
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公开(公告)号：EP2388103A1
公开(公告)日：2011-11-23
申请号：EP09837544.7
申请日：2009-12-04
IPC分类号： B23K26/38 , B23K26/03 , B23K26/06 , B23K26/073 , B23K26/08 , B23K26/40 , H01L21/301
CPC分类号： B23K26/0736 , B23K26/0057 , B23K26/0617 , B23K26/0738 , B23K26/08
摘要： A cylindrical lens (4) diverges a laser beam (L1) in the Y-axis direction (i.e., within the YZ plane) but neither diverges nor converges it in the X-axis direction (i.e., within the ZX plane). An objective lens (5) converges the laser beam (L1) emitted from the cylindrical lens (4) into a point P1 in the Y-axis direction and into a point P2 in the X-axis direction. As a consequence, the cross section of the laser beam (L1) becomes elongated forms extending in the X- and Y-axis directions at the points P1, P2, respectively. Therefore, when the points P1, P2 are located on the outside and inside of the work (S), respectively, an elongated working area extending in the Y-axis direction can be formed in a portion where the point P2 is positioned within the work (S).
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公开(公告)号：EP2194575B1
公开(公告)日：2017-08-16
申请号：EP10157833.4
申请日：2003-03-06
CPC分类号： H01L21/78 , B23K26/0057 , B23K26/0622 , B23K26/063 , B23K26/40 , B23K26/4075 , B23K2203/50 , B28D5/00 , B28D5/0011 , H01L21/268 , H01L21/304 , H01L21/30604 , H01L21/6836 , H01L21/76894 , H01L23/544 , H01L23/562 , H01L2221/68327 , H01L2221/68336 , H01L2223/5446 , H01L2924/00 , H01L2924/0002
摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.
摘要翻译： 一种衬底分割方法，其能够在防止发生碎裂和破裂的同时使衬底变薄和分割。 该基板分割方法包括以下步骤：将具有由功能器件19形成的前表面3的半导体基板1用激光照射，同时将聚光点定位在基板内，从而形成包括应有的熔融处理区域 使半导体基板1内的多光子吸收，使包含熔融处理区域的改质区域形成切断的起点区域， 以及在形成用于切割的起点区域的步骤之后研磨半导体衬底1的背面21，使得半导体衬底1达到预定厚度。
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公开(公告)号：EP2388103B1
公开(公告)日：2017-08-02
申请号：EP09837544.7
申请日：2009-12-04
IPC分类号： B23K26/38 , B23K26/03 , B23K26/06 , B23K26/073 , B23K26/08 , B23K26/40 , H01L21/301
CPC分类号： B23K26/0736 , B23K26/0057 , B23K26/0617 , B23K26/0738 , B23K26/08
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公开(公告)号：EP2388100B1
公开(公告)日：2017-11-22
申请号：EP09837545.4
申请日：2009-12-04
IPC分类号： B23K26/04 , B23K26/03 , B23K26/06 , B23K26/073 , B23K26/08
CPC分类号： B23K26/0732 , B23K26/0617 , B23K26/073 , B23K26/0738 , B23K26/08
摘要： A cylindrical lens (4) diverges a laser beam (L1) in the Y-axis direction (i.e., within the YZ plane) but neither diverges nor converges it in the X-axis direction (i.e., within the ZX plane). An objective lens (5) converges the laser beam (L1) emitted from the cylindrical lens (4) into a point P1 in the Y-axis direction and into a point P2 in the X-axis direction. A pair of knife edges (13) adjust the divergence angle (¸) of the laser beam (L1) incident on the objective lens (5) in the Y-axis direction. As a consequence, the cross section of the laser beam (L1) becomes an elongated form extending in the Y-axis direction at the point P2, while the maximum length in the Y-axis direction is regulated. Therefore, locating the point P2 on the front face of a work (S) can form an elongated working area extending in the Y-axis direction by a desirable length on the front face of the work (S).
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公开(公告)号：EP2194575A3
公开(公告)日：2013-02-13
申请号：EP10157833.4
申请日：2003-03-06
CPC分类号： H01L21/78 , B23K26/0057 , B23K26/0622 , B23K26/063 , B23K26/40 , B23K26/4075 , B23K2203/50 , B28D5/00 , B28D5/0011 , H01L21/268 , H01L21/304 , H01L21/30604 , H01L21/6836 , H01L21/76894 , H01L23/544 , H01L23/562 , H01L2221/68327 , H01L2221/68336 , H01L2223/5446 , H01L2924/00 , H01L2924/0002
摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.
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公开(公告)号：EP1588793B1
公开(公告)日：2012-03-21
申请号：EP03777262.1
申请日：2003-12-04
CPC分类号： B23K26/0057 , B23K26/066 , B23K26/1462 , B23K26/40 , B23K2201/40 , B23K2203/50 , B28D1/221
摘要： A laser processing device (20) has a diaphragm member (38) with a first light passage hole (32) and a second light passage hole (39) that has the same diameter as the first light passage hole, and the device is provided on a light path of laser light (L1), which path connects a beam expander (34) and the first light passage hole (32) of a lens holder (29). The diaphragm member (38) is separated from the lens holder (29), so that, even if the diaphragm member (38) is heated by the laser light (L1) cut at a peripheral portion of the second light passage hole (39), heat is prevented from being transmitted from the diaphragm member (38) to the lens holder (29). As a consequence, positional displacement of a light collection point (P1) of the laser light (L1) caused by heating of the lens holder (29) is limited to a small amount.
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