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91.发明公开
公开(公告)号：EP0137209A3
公开(公告)日：1987-07-29
申请号：EP84109528
申请日：1984-08-10
发明人： Ahlgren, David Cutler , Deines, John Louis , Hearn, Eric White , Kulkarni, Murlidhar Vasudeo , Montillo, Francis Joseph , Poponiak, Michael Robert , Wang, James Jen-Ho
摘要： The semiconductor silicon wafer contains a small amount of oxygen and has a carbon concentration of greater than about 4 ppm. Wafers of said kind are provided by slicing the tall part of a melt-grown silicon crystal into wafers and subsequently selecting from the produced wafers those having a carbon concentration of greater than 4 ppm. These wafers are applied for producing integrated circuit devices by means of essentially known manufacturing procedures. The formed integrated circuit devices have a low device-leakage current.
摘要翻译： 半导体硅晶片含有少量的氧并具有大于约4ppm的碳浓度。 通过将熔融生长的硅晶体的尾部切片成晶片并随后从生成的晶片中选择碳浓度大于4ppm的晶片来提供所述种类的晶片。 这些晶片通过基本上已知的制造方法应用于制造集成电路器件。 形成的集成电路器件具有低的器件漏电流。
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公开(公告)号：EP0098471A3
公开(公告)日：1985-05-15
申请号：EP83106146
申请日：1983-06-23
CPC分类号： C30B15/22 , C30B15/04 , C30B15/14 , C30B15/30 , Y10S117/916
摘要： An improved method of growing silicon crystals by the Czochralski method to obtain a desired oxygen concentration level with both axial and radial uniformity. The crucible is located within the heater to achieve a given temperature profile which is related to the oxygen concentration, and then raised and rotated at an increasing speed together with a high crystal rotation rate to achieve the uniformity.
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公开(公告)号：EP4394095A3
公开(公告)日：2024-11-06
申请号：EP24159431.6
申请日：2020-05-18
发明人： LUTER, William L. , SREEDHARAMURTHY, Hariprasad , HARINGER, Stephan , PHILLIPS, Richard J. , ZHANG, Nan , WU, Yu-Chiao
摘要： Methods for producing a silicon crystal silicon ingot are disclosed. The ingot is doped with boron using solid-phase boric acid as the source of boron. Boric acid may be used to counter-dope the ingot during ingot growth. Ingot puller apparatus that use a solid-phase dopant are also disclosed. The solid-phase dopant may be disposed in a receptacle that is moved closer to the surface of the melt or a vaporization unit may be used to produce a dopant gas from the solid-phase dopant.
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公开(公告)号：EP3902942B1
公开(公告)日：2023-03-22
申请号：EP19836380.6
申请日：2019-12-13
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公开(公告)号：EP3470495B1
公开(公告)日：2022-08-24
申请号：EP18203753.1
申请日：2013-04-18
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公开(公告)号：EP3390697B1
公开(公告)日：2020-07-29
申请号：EP16809829.1
申请日：2016-12-14
发明人： VEIRMAN, Jordi , ALBARIC, Mickaël , STADLER, Jacky
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97.发明公开
公开(公告)号：EP3633081A1
公开(公告)日：2020-04-08
申请号：EP18809748.9
申请日：2018-02-06
发明人： ALENKOV, Vladimir Vladimirovich , BUZANOV, Oleg Alekseevich , DOSOVITSKY, Aleksei Efimovich , DOSOVITSKY, Georgy Alekseevich , KORJIK, Mikhail Vasilievich , FEDOROV, Andrei Anatolievich
摘要： The invention relates to scintillation inorganic oxide single crystals with garnet structure, which comprise cerium and are co-alloyed with titanium and Group 2 elements. The invention makes it possible to increase the scintillation output and to enhance the energy resolution of scintillation detectors during gamma-ray quantum registration. The technical result is achieved by a single crystal with a garnet structure being co-alloyed with cerium, titanium and Group 2 elements. This single crystal is produced by the Czochralski process.
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98.发明公开
公开(公告)号：EP3390699A1
公开(公告)日：2018-10-24
申请号：EP16819040.3
申请日：2016-12-14
CPC分类号： C30B29/06 , C30B15/04 , C30B15/206
摘要： The invention relates to a method for manufacturing ingots made of a semi-conductive material, including the following steps: crystallising under specific draft conditions a first ingot, referred to as the reference ingot, from a first molten load containing oxygen; measuring the interstitial oxygen concentration in various regions distributed along the reference ingot; measuring, in the various regions of the reference ingot, the concentration of thermal donors formed during the crystallisation of the reference ingot; determining the actual durations of an annealing process for forming the thermal donors, undergone by the various regions of the reference ingot during the crystallisation thereof, from the measurements of the interstitial oxygen concentration and the concentration of thermal donors; calculating the thermal donor concentration values to be obtained so that a second ingot has, after crystallisation, an axial electric resistivity according to a target profile; determining an axial profile of interstitial oxygen concentration corresponding to the target axial resistivity profile, from the thermal donor concentration values and the actual durations of the annealing process for forming the thermal donors; crystallising under said specific draft conditions the second ingot from a second molten load containing oxygen, the oxygen concentration of the second molten load being adjusted throughout the crystallisation so as to obtain, in the second ingot, the axial profile of interstitial oxygen concentration.
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公开(公告)号：EP1785511B1
公开(公告)日：2016-11-30
申请号：EP05780919.6
申请日：2005-08-24
申请人： SUMCO Corporation
发明人： HOURAI, Masataka, SUMCO CORPORATION , SUGIMURA, Wataru, SUMCO CORPORATION , ONO, Toshiaki, SUMCO CORPORATION
CPC分类号： C30B29/06 , C30B15/04 , C30B15/203
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公开(公告)号：EP1975283B1
公开(公告)日：2016-11-23
申请号：EP06842997.6
申请日：2006-12-21
发明人： EBARA, Koji
IPC分类号： C30B33/02 , C30B29/06 , H01L21/322 , C30B15/04 , C30B15/20
CPC分类号： H01L21/3225 , C30B15/04 , C30B15/203 , C30B29/06 , C30B33/02
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