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公开(公告)号：EP4394095A3
公开(公告)日：2024-11-06
申请号：EP24159431.6
申请日：2020-05-18
发明人： LUTER, William L. , SREEDHARAMURTHY, Hariprasad , HARINGER, Stephan , PHILLIPS, Richard J. , ZHANG, Nan , WU, Yu-Chiao
摘要： Methods for producing a silicon crystal silicon ingot are disclosed. The ingot is doped with boron using solid-phase boric acid as the source of boron. Boric acid may be used to counter-dope the ingot during ingot growth. Ingot puller apparatus that use a solid-phase dopant are also disclosed. The solid-phase dopant may be disposed in a receptacle that is moved closer to the surface of the melt or a vaporization unit may be used to produce a dopant gas from the solid-phase dopant.
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公开(公告)号：EP4394095A2
公开(公告)日：2024-07-03
申请号：EP24159431.6
申请日：2020-05-18
发明人： LUTER, William L. , SREEDHARAMURTHY, Hariprasad , HARINGER, Stephan , PHILLIPS, Richard J. , ZHANG, Nan , WU, Yu-Chaio
IPC分类号： C30B35/00
摘要： Methods for producing a silicon crystal silicon ingot are disclosed. The ingot is doped with boron using solid-phase boric acid as the source of boron. Boric acid may be used to counter-dope the ingot during ingot growth. Ingot puller apparatus that use a solid-phase dopant are also disclosed. The solid-phase dopant may be disposed in a receptacle that is moved closer to the surface of the melt or a vaporization unit may be used to produce a dopant gas from the solid-phase dopant.
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公开(公告)号：EP4214495A1
公开(公告)日：2023-07-26
申请号：EP21790691.6
申请日：2021-09-15
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公开(公告)号：EP3990683A1
公开(公告)日：2022-05-04
申请号：EP20730890.9
申请日：2020-05-18
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