摘要:
The invention relates to a synchronous semiconductor memory integrated circuit comprising a memory block, an input for receiving an external clock signal, an address input means providing adresses in response to edges of said external clock signal, access means for accessing a location in said memory block, and control means for receiving a predetermined set of control signals for outputting an internal control signal defining the timing of an internal operation of said memory, wherein said internal operation represents a write operation when said first control signal is in a first logic level and said second control signal is in a second logic level, and said internal operation represents a read operation when said first control signal is in a third logic level and said second control signal is in said second logic level. Further the invention relates to a method for accessing such a memory and a system comprising such a memory.
摘要:
A semiconductor memory device including a serial I/O buffer (19); DRAM cells (1); and SAM cells (4,5) arranged in line, the SAM cells corresponding to the DRAM cells in one row. In the device in a first mode, the SAM cells (4,5) are divided into N first portions each having boundaries, data stored in the SAM cells being transferred to the serial I/O buffer (19) sequentially until the SAM cells in the boundaries of the first portions are transferred to the serial I/O buffer. In a second mode, the SAM cells (4,5) are divided into M (N>M) second portions each having boundaries, data stored in the SAM cells being transferred to the serial I/O buffer (19) sequentially until the SAM cells in the boundaries of the second portions are transferred to the serial input output buffer. The semiconductor memory device further includes a circuit for detecting changes from the first mode to the second mode and from the second mode to the first mode. The semiconductor memory device further includes a circuit for generating a first and a second signals. When a mode is changed from the first mode to the second mode, the circuit generates the first signal. When the mode is changed from the second mode to the first mode the circuit generates the second signal.
摘要:
A Video-RAM semiconductor memory device comprised of a RAM array having an address input for inputting row, column, and target addresses, and a serial access array having a serial output port. The Video-RAM has address/control logic which detects a stimulus such as a RAS clock from an external controller indicating a coarse timing location for a data transfer between the RAM array and the serial access array. The control logic then provides control signals, that are internally synchronized with a serial clock, and that occur during a period that a tap pointer is equal to a value one less than a programmable target value or an input target address. This causes a row in the RAM array corresponding to an input row address to be transferred between the RAM array and the serial access array.
摘要:
The invention relates to a system comprising a memory, a circuit for accessing said memory and a bus connecting said circuit to said memory, said circuit comprising means for providing a first address and a second address on said bus, said first address being valid on said bus on a first edge of a clock signal and said second address being valid on said bus on a second edge of said clock signal, said first edge of said clock signal being different from said second edge of said clock signal, and said memory being a synchronous dynamic random access memory integrated circuit comprising a memory block including a plurality of memory cells for storing information, an input for receiving said clock signal, an address input means for receiving and holding said first address from said bus in response to said first edge of said clock signal, and for receiving and holding said second address from said bus in response to said second edge of said clock signal and an access means for accessing a location in said memory block corresponding to said first address and said second address held by said address input means.
摘要:
A semiconductor memory device has a memory cell array (1) including many memory cells, a first data I/O section (6) for implementing random input and output of data for the memory cells based on an externally-supplied random I/O signal, a second data I/O section (7) for implementing serial input and output of data for the memory cells, a counter (8) for counting the number of externally-supplied basic clock signal cycles, a controller (9) for controlling the I/O of data for the memory cells in accordance with the number of the cycles of basic clock signals. The counter is capable of inputting at least one kind of externally-supplied designation signal, generating a designation control signal for designating a specified cycle which is a count starting cycle for the basic clock signal at each designation signal, issuing instructions for commencement of count for the number of cycles of the basic clock signal in the counter based on the designated control signal, and synchronously controlling designation of addresses based on the number of cycles counted by the counter and the I/O operations of the first data I/O means and the second data I/O means from the specified cycle of the designated basic clock signal.
摘要:
Speicheranordnung, insbesondere zum Abspeichern der Bildpunktdaten eines Fernsehbildes
mit einem Hauptspeicher (50) mit zumindest einer Eingabeanordnung (100), die mit einem aus zumindest zwei Abschnitten bestehenden Schieberegister (101) zum seriellen Einlesen von Bildpunktdaten, mit einem aus zumindest zwei Abschnitten bestehenden Schreibspeicher (102) zur bitparallelen Übergabe der Daten an den Hauptspeicher (50) über einen Datenbus (10), mit einer Schalteinrichtung (103) zur Steuerung dieser Datenübergabe an den Hauptspeicher (50) und mit einem Schalter (104) gebildet ist, und die mit zumindest einer anderen Eingabeanordnung (200) zusammenschaltbar ist, mit zumindest einer Ausgabeanordnung (300), die mit einem aus zumindest zwei Abschnitten bestehenden Schieberegister (301) zum seriellen Auslesen von Bildpunktdaten, mit einem aus zumindest zwei Abschnitten bestehenden Lesespeicher (302) zur bitparallelen Übernahme der Daten aus dem Hauptspeicher (50) über den Datenbus (10), mit einer Schalteinrichtung (303) zum Steuern dieser Datenübernahme vom Hauptspeicher (50) und mit einem Schalter (304) gebildet ist, und die mit zumindest einer anderen Ausgabeanordnung (400) zusammenschaltbar ist, und mit einer Steuerschaltung (20), die den Datenfluß zwischen der Eingabeanordnung (100) und der Ausgabeanordnung (300) und dem Hauptspeicher (50) steuert, und die die Zusammenschaltung jeweiliger Eingabeanordnungen (100, 200) und/oder Ausgabeanordnungen (300, 400) steuert, indem sie über zumindest einen ersten externen Anschluß (1, 2, 3) ansteuerbar ist.