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25 条记录 (耗时 0.012 秒)

    Apparatus for irradiation with charged particle beams
    11.
    发明公开
    Apparatus for irradiation with charged particle beams 失效
    用于与带电粒子照射的装置。

    公开(公告)号：EP0084850A2

    公开(公告)日：1983-08-03

    申请号：EP83100436.1

    申请日：1983-01-19

    申请人： Hitachi, Ltd.

    发明人： Tamura, Hifumi ,  Ishitani, Tohru ,  Shimase, Akira

    IPC分类号： H01J37/10 ,  H01J37/252

    CPC分类号： H01J37/10 ,  H01J37/252

    摘要： An apparatus according to the present invention for irradiating a specimen with charged particle beams comprises a single charged particle generating source (1) from which the charged particle beams formed of electrons and negative ions, respectively, can be simultaneously derived; a specimen holder (2) on which the specimen (11) is placed; and charged particle irradiation means which is interposed between the charged particle generating source and the specimen holder in order to focus the charged particle beams and to irradiate the surface of the specimen with the focused beams, and which includes at least one magnetic lens (M 1 M 2 ) and at least one electrostatic lens (E,, E 2 ) that are individually disposed.

    Method for making specimen and apparatus thereof
    13.
    发明公开
    Method for making specimen and apparatus thereof 失效
    Verfahren und Vorrichtung zur Probenherstellung

    公开(公告)号：EP0687897A1

    公开(公告)日：1995-12-20

    申请号：EP95109035.6

    申请日：1995-06-12

    申请人： HITACHI, LTD.

    发明人： Itoh, Fumikazu ,  Nakata, Toshihiko ,  Ishitani, Tohru ,  Shimase, Akira ,  Yamaguchi, Hiroshi ,  Kamimura, Takashi

    IPC分类号： G01N1/00 ,  H01J37/304

    CPC分类号： H01J37/3056 ,  G01N1/32 ,  H01J37/226 ,  H01J37/3005 ,  H01J37/304 ,  H01J2237/30466 ,  H01J2237/3114 ,  H01J2237/31745

    摘要： The present invention is intended to provide a method and an apparatus for making a specimen for use in observation through a transparent electron microscope, including a step for milling part of the specimen into a thin film part, which can be observed through a transparent electron microscope, by scanning and irradiating a focused ion beam onto the specimen, a step for observing a mark for detection of position provided on the specimen as a secondary charged particle image by scanning and irradiating a charged particle beam onto the specimen without irradiating the charged particle beam onto the portion to be milled into the thin film part during the step for milling, and a step for compensating positional drift of the focused ion beam during said step for milling in accordance with a result of the observation.
    The present invention provides an effect to strikingly raise the efficiency of TEM observation since a specimen for use in TEM observation can be made by precisely milling a thin film part of the specimen even though positional drift of the focused ion beam is caused during milling.

    摘要翻译： 本发明旨在提供一种通过透明电子显微镜制造用于观察的样本的方法和装置，包括将部分样品切成薄膜部分的步骤，其可以通过透明电子显微镜观察 通过将聚焦离子束扫描并照射到样本上，通过扫描并将带电粒子束照射到样本上而不照射带电粒子束来观察用于检测在样本上提供的位置的标记作为二次带电粒子图像的步骤 在用于研磨的步骤期间在待研磨到薄膜部分的部分上，以及根据观察结果在所述铣削步骤期间补偿聚焦离子束的位置漂移的步骤。 本发明提供了显着提高TEM观察效率的效果，因为即使在研磨中发生聚焦离子束的位置漂移，也可以通过精确地研磨试样的薄膜部分来进行TEM观察用的试样。

    Method and apparatus for correcting defects of x-ray mask
    15.
    发明公开
    Method and apparatus for correcting defects of x-ray mask 失效
    用于校正X射线掩模缺陷的方法和装置

    公开(公告)号：EP0298495A3

    公开(公告)日：1989-09-27

    申请号：EP88110937.5

    申请日：1988-07-08

    申请人： HITACHI, LTD.

    发明人： Yamaguchi, Hiroshi ,  Saito, Keiya ,  Koizumi, Mitsuyoshi ,  Shimase, Akira ,  Haraichi, Satoshi ,  Miyauchi, Tateoki ,  Kuniyoshi, Shinji ,  Aiuchi, Susumu

    IPC分类号： G03F1/00

    CPC分类号： G03F1/74 ,  G03F1/22

    摘要： The present invention relates to method and apparatus for correcting defects of an X-ray mask comprising the steps of: irradiating a focused ion beam to at least a region having a defective portion of an X-ray mask (200) having a protective film (204, 304) and eliminating the protective film; exposing a circuit pattern (205, 305) having a defective portion (150, 160) locating under the region or setting this circuit pattern to the state near the exposure; detecting at least one of the secondary electrons, secondary ions, reflected electrons, and absorbing current generated from that region and detecting a true defective position; positioning the focused ion beam to the true defective position and irradiating the focused ion beam to the defective portion; and thereby correcting the defect.

    Method and apparatus for forming film by ion beam
    17.
    发明公开
    Method and apparatus for forming film by ion beam 失效
    通过离子束形成薄膜的方法和装置

    公开(公告)号：EP0141417A3

    公开(公告)日：1987-03-25

    申请号：EP84113348

    申请日：1984-11-06

    申请人： HITACHI, LTD.

    发明人： Miyauchi, Tateoki ,  Yamaguchi, Hiroshi ,  Hongo, Mikio ,  Mizukoshi, Katsuro ,  Shimase, Akira ,  Satoh, Ryohei

    IPC分类号： C23C14/32 ,  H01J37/317

    CPC分类号： H01J37/3056 ,  C23C14/221 ,  H01J37/3178 ,  H01J2237/31749

    摘要： An ion beam apparatus comprises a chamber of high vacuum, a heated crucible (4) for producing vapor of a material (3), ionizing means (46, 47, 49), ion accelerating means (6b, 5). A substrate (5) to be coated with the vaporized material is disposed within the chamber. An accelerating voltage (-V,, 57) is applied across the crucible (4) and the accelerating means (6b, 5) such that the crucible (4) is of positive polarity while the accelerating means is of negative polarity. The crucible is provided with a small hole (7b) for ejecting the vapor of the material into the vacuum chamber to thereby form atom clouds referred to as clusters under adiabatic expansion and supercooling, a part of the clusters being ionized through irradiation of electrons by the ionizing means and accelerated by the accelerating means so that the ionized and accelerated clusters deposit on the substrate (5) to form a thin film (23) thereon. An electrostatic optical system (13,36,43) is interposed between the cluster ionizing region (49) and the substrate (5) wherein the electrostatic optical system serves to focus the ionized clusters onto the element to form the thin film (23) thereon through deposition of the ionized clusters.

    Apparatus for ion beam work
    18.
    发明公开
    Apparatus for ion beam work 失效
    设备，用于离子束处理。

    公开(公告)号：EP0168056A2

    公开(公告)日：1986-01-15

    申请号：EP85108708.0

    申请日：1985-07-12

    申请人： HITACHI, LTD.

    发明人： Shimase, Akira ,  Yamaguchi, Hiroshi ,  Haraichi, Satoshi ,  Miyauchi, Tateoki

    IPC分类号： H01J37/304 ,  H01J37/317

    CPC分类号： H01J37/3056 ,  H01J37/3005 ,  H01J37/304

    摘要： This invention discloses an ion beam work apparatus which comprises ion beam radiation means (2, 3) for focusing and radiating an ion beam (10) extracted from an ion source (1) to a target (4) put on a moving mechanism (5), and scanning two-dimensionally the radiation position; secondary particle detection means (6) for detecting the secondary particles (11) generated from the target (4) upon radiation of the ion beam (10); and superposition-display means (14) for superposing the secondary particle image (33) with a different kind of image (34) containing such information that is not contained in the secondary particle image (33), and displaying the resulting image (35); and which can accurately position the beam radiation position to lower wiring layers of the target (4) such as a semiconductor device that cannot be observed by the secondary particle image (33) obtained by scanning the focused ion beam (10).