公开(公告)号：EP0091777B1

公开(公告)日：1989-01-11

申请号：EP83301924.3

申请日：1983-04-06

申请人： Hitachi, Ltd.

发明人： Ishitani, Tohru ,  Tamura, Hifumi ,  Shimase, Akira

IPC分类号： H01J27/22

CPC分类号： H01J27/26

公开(公告)号：EP0106336A3

公开(公告)日：1986-03-26

申请号：EP83110264

申请日：1983-10-14

申请人： HITACHI, LTD.

发明人： Miyauchi, Tateoki ,  Hongo, Mikio ,  Mizukoshi, Katsuro ,  Yamaguchi, Hiroshi ,  Shimase, Akira

IPC分类号： G02B17/00 ,  H01S03/00

CPC分类号： G02B27/0927 ,  B23K26/0604 ,  B23K26/0734 ,  G02B27/09 ,  G02B27/0905 ,  G02B27/0977

摘要： A light source apparatus comprises one laser oscillator (1), at least one other laser oscillator (2, 3, 4), a light converter (5, 6, 7) for converting a laser beam emitted from the other laser oscillator into a ring-shaped laser beam, and a reflecting mirror (8, 9, 10; 40, 50, 60) for passing a laser light beam (20) emitted from the one laser oscillator through the center hole of the mirror and for reflecting the ring-shaped laser beam from the other laser oscillator via the light converter, the laser beam reflected by the reflecting mirror being coaxial with and being overlapped with the laser beam transmitted through the mirror from the one laser oscillator.

公开(公告)号：EP0091777A2

公开(公告)日：1983-10-19

申请号：EP83301924.3

申请日：1983-04-06

申请人： Hitachi, Ltd.

发明人： Ishitani, Tohru ,  Tamura, Hifumi ,  Shimase, Akira

IPC分类号： H01J27/22

CPC分类号： H01J27/26

摘要： A liquid metal ion source according to the present invention has a needle electrode (1) whose fore end is disposed at a position speced from a reservoir (3') for holding a source material (2), and is provided with means (12,13,13') for freely varying the distance from the reservoir (3') to the fore end of the needle electrode (1). This distance can therefore be optimized to give more stable operation under a wider range of conditions.

公开(公告)号：EP0298495B1

公开(公告)日：1993-10-06

申请号：EP88110937.5

申请日：1988-07-08

申请人： HITACHI, LTD.

发明人： Yamaguchi, Hiroshi ,  Saito, Keiya ,  Koizumi, Mitsuyoshi ,  Shimase, Akira ,  Haraichi, Satoshi ,  Miyauchi, Tateoki ,  Kuniyoshi, Shinji ,  Aiuchi, Susumu

IPC分类号： G03F1/00

CPC分类号： G03F1/74 ,  G03F1/22

公开(公告)号：EP0295065A3

公开(公告)日：1991-07-03

申请号：EP88305199.7

申请日：1988-06-08

申请人： HITACHI, LTD.

发明人： Takahashi, Takahiko ,  Hayakawa, Hajime ,  Okamoto, Yoshihiko ,  Itoh, Fumikazu ,  Haraichi, Satoshi ,  Shimase, Akira ,  Kobayashi, Tohru ,  Anzai, Akio ,  Yamaguchi, Hiroshi ,  Hongo, Mikio

IPC分类号： H01L21/66 ,  H01L23/54 ,  H01L21/302

CPC分类号： H01L24/05 ,  H01J37/304 ,  H01J37/31 ,  H01L21/768 ,  H01L21/76879 ,  H01L21/76888 ,  H01L21/76892 ,  H01L21/76894 ,  H01L22/22 ,  H01L22/32 ,  H01L23/3121 ,  H01L23/5226 ,  H01L23/5254 ,  H01L23/544 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L2223/5442 ,  H01L2223/54473 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05 ,  H01L2224/16 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48599 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01061 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/1204 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/19043 ,  H01L2924/20753 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/85399 ,  H01L2224/05599

摘要： In making defect correction and circuit change in a semiconductor integrated circuit device using a focused ion beam etching technique, the present invention relates to an IC or VLSI structure having a trial cutting region, a test etching region and an auxiliary wiring or pad, suitable for the application of such defect correction and circuit change, as well as a method of making same, a designing method using such technique, and a focused ion beam system and other systems for use in those methods.

公开(公告)号：EP0295065A2

公开(公告)日：1988-12-14

申请号：EP88305199.7

申请日：1988-06-08

申请人： HITACHI, LTD.

发明人： Takahashi, Takahiko ,  Hayakawa, Hajime ,  Okamoto, Yoshihiko ,  Itoh, Fumikazu ,  Haraichi, Satoshi ,  Shimase, Akira ,  Kobayashi, Tohru ,  Anzai, Akio ,  Yamaguchi, Hiroshi ,  Hongo, Mikio

IPC分类号： H01L21/66 ,  H01L23/54 ,  H01L21/302

CPC分类号： H01L24/05 ,  H01J37/304 ,  H01J37/31 ,  H01L21/768 ,  H01L21/76879 ,  H01L21/76888 ,  H01L21/76892 ,  H01L21/76894 ,  H01L22/22 ,  H01L22/32 ,  H01L23/3121 ,  H01L23/5226 ,  H01L23/5254 ,  H01L23/544 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L2223/5442 ,  H01L2223/54473 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05 ,  H01L2224/16 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48599 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01061 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/1204 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/19043 ,  H01L2924/20753 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/85399 ,  H01L2224/05599

摘要： In making defect correction and circuit change in a semiconductor integrated circuit device using a focused ion beam etching technique, the present invention relates to an IC or VLSI structure having a trial cutting region, a test etching region and an auxiliary wiring or pad, suitable for the application of such defect correction and circuit change, as well as a method of making same, a designing method using such technique, and a focused ion beam system and other systems for use in those methods.

摘要翻译： 在使用聚焦离子束蚀刻技术制造缺陷校正和电路变化的半导体集成电路器件中，本发明涉及一种在IC或VLSI结构具有试验切割区域，测试蚀刻区域和辅助布线或垫，适合 搜索缺陷校正电路和变化的应用，以及制备其的方法，采用搜索技术的设计方法，和聚焦离子束系统和其他系统，用于这些方法中的用途。

公开(公告)号：EP0106336A2

公开(公告)日：1984-04-25

申请号：EP83110264.5

申请日：1983-10-14

申请人： HITACHI, LTD.

发明人： Miyauchi, Tateoki ,  Hongo, Mikio ,  Mizukoshi, Katsuro ,  Yamaguchi, Hiroshi ,  Shimase, Akira

IPC分类号： G02B17/00 ,  H01S3/00

CPC分类号： G02B27/0927 ,  B23K26/0604 ,  B23K26/0734 ,  G02B27/09 ,  G02B27/0905 ,  G02B27/0977

摘要： A light source apparatus comprises one laser oscillator (1), at least one other laser oscillator (2, 3, 4), a light converter (5, 6, 7) for converting a laser beam emitted from the other laser oscillator into a ring-shaped laser beam, and a reflecting mirror (8, 9, 10; 40, 50, 60) for passing a laser light beam (20) emitted from the one laser oscillator through the center hole of the mirror and for reflecting the ring-shaped laser beam from the other laser oscillator via the light converter, the laser beam reflected by the reflecting mirror being coaxial with and being overlapped with the laser beam transmitted through the mirror from the one laser oscillator.

公开(公告)号：EP0084850B1

公开(公告)日：1989-01-25

申请号：EP83100436.1

申请日：1983-01-19

申请人： Hitachi, Ltd.

发明人： Tamura, Hifumi ,  Ishitani, Tohru ,  Shimase, Akira

IPC分类号： H01J37/10 ,  H01J37/252

CPC分类号： H01J37/10 ,  H01J37/252

公开(公告)号：EP0075949A3

公开(公告)日：1986-02-05

申请号：EP82109014

申请日：1982-09-29

申请人： Hitachi, Ltd.

发明人： Yamaguchi, Hiroshi ,  Miyauchi, Tateoki ,  Shimase, Akira ,  Hongo, Mikio

IPC分类号： H01J37/30 ,  G03F01/00

CPC分类号： H01L21/30 ,  G03F1/74 ,  H01J37/3007 ,  H01J37/3053 ,  H01J2237/0044 ,  H01J2237/0807

摘要： Disclosed is an ion beam processing apparatus comprising within a vacuum container (39) a specimen chamber (40) with a thble (55) for mounting a specimen (90) provided therein, a high intensity ion source (65), such as a liquid metal ion source or an electric field ionizing ion source which operates in ultra-low temperature, confronting the specimen chamber, an extraction electrode (67) for extracting an ion beam out of the ion source, a charged-particle optical system (70-72) for focusing the ion beam to a spot, and an aperture (69) for adjusting the spot diameter.

公开(公告)号：EP0084850A3

公开(公告)日：1986-01-29

申请号：EP83100436

申请日：1983-01-19

申请人： Hitachi, Ltd.

发明人： Tamura, Hifumi ,  Ishitani, Tohru ,  Shimase, Akira

IPC分类号： H01J37/10 ,  H01J37/252

CPC分类号： H01J37/10 ,  H01J37/252

摘要： An apparatus according to the present invention for irradiating a specimen with charged particle beams comprises a single charged particle generating source (1) from which the charged particle beams formed of electrons and negative ions, respectively, can be simultaneously derived; a specimen holder (2) on which the specimen (11) is placed; and charged particle irradiation means which is interposed between the charged particle generating source and the specimen holder in order to focus the charged particle beams and to irradiate the surface of the specimen with the focused beams, and which includes at least one magnetic lens (M 1 M 2 ) and at least one electrostatic lens (E,, E 2 ) that are individually disposed.