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公开(公告)号：EP1454359B1
公开(公告)日：2014-07-23
申请号：EP02796562.3
申请日：2002-12-02
IPC分类号： H01L29/732 , H01L29/66 , H01L29/08 , H01L29/10
CPC分类号： H01L29/66287 , H01L29/0821 , H01L29/1004 , H01L29/7325
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公开(公告)号：EP1118124B1
公开(公告)日：2010-12-01
申请号：EP99955791.1
申请日：1999-09-20
IPC分类号： H01L29/732 , H01L21/331
CPC分类号： H01L29/66287 , H01L29/7322
摘要： The invention relates to a bipolar transistor and a method for producing same. The aim of the invention is to provide a bipolar transistor and a method for producing same, which during the use of a single-process poly-silicon technology with differential epitaxis for the production of bases overcomes the disadvantages of conventional systems, so as notably further to improve the high-speed properties of a bipolar transistor, provide highly conductive connections between the metal contacts and the active (internal) transistor region and a minimized passive transistor surface while at the same time avoiding greater process complexity and increased contact resistances. To this end, by creating suitable epitaxis conditions a poly-silicon layer is deposited on the insulating area which is thicker than the epitaxis layer in the active transistor area. The greater thickness of the poly-silicon layer in relation to the epitaxis layer is achieved through the use of a very low temperature for the deposition of part or all of the buffer layer. Th use of a very low deposition temperature results in improved seeding of the insulating layer and a reduction in the deposition dead time, which makes it possible to produce a thicker layer on the insulating layer than in the active transistor area.
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