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43 条记录 (耗时 0.014 秒)

    Josephson devices and process for manufacturing the same
    14.
    发明公开
    Josephson devices and process for manufacturing the same 失效
    约瑟夫森Einrichtungen和Verfahren祖德伦Herstellung。

    公开(公告)号：EP0366949A1

    公开(公告)日：1990-05-09

    申请号：EP89118259.4

    申请日：1989-10-02

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Higashino, Hidetaka ,  Mizuno, Koichi ,  Adachi, Hideaki ,  Setsune, Kentaro ,  Enokihara, Akira ,  Hatta, Shinichiro ,  Wasa, Kiyotaka ,  Kohiki, Shigemi ,  Matsuchima, Tomoaki

    IPC分类号： H01L39/24 ,  H01L39/22

    CPC分类号： H01L39/2496 ,  Y10S505/702 ,  Y10S505/873 ,  Y10S505/874

    摘要： A Josephson device, comprising a junction formed by forming the first layer-shaped oxide superconductor thin film including a plurality of Cu-O layers on a substrate, a barrier layer thereon and the second layer-­shaped oxide superconductor thin film on the barrier layer. The Josephson device according to the present invention is manufactured by forming the first layer-­shaped oxide superconductor thin film on a substrate, forming a barrier layer in the same vacuum chamber, defining patterns to said barrier layer and said first layer-shaped oxide superconductor thin film, forming an interlayer insulating film on said barrier layer, removing said interlayer insulating film in a region serving as a junction, effecting exposure to oxygen plasma, forming the second layer-shaped oxide superconductor thin film in contact with a part of the surface of said barrier layer and defining patterns to said second layer-shaped oxide superconductor thin film.

    摘要翻译： 约瑟夫逊装置，包括通过在衬底上形成包括多个Cu-O层的第一层状氧化物超导体薄膜，其上的阻挡层和阻挡层上的第二层状氧化物超导体薄膜而形成的结。 根据本发明的约瑟夫逊装置通过在基板上形成第一层状氧化物超导体薄膜来制造，在相同的真空室中形成阻挡层，限定图案到所述阻挡层和所述第一层状氧化物超导薄层 膜，在所述阻挡层上形成层间绝缘膜，去除作为结的区域中的所述层间绝缘膜，进行暴露于氧等离子体，形成第二层状氧化物超导体薄膜，与第二层状氧化物超导体薄膜的一部分接触 所述阻挡层并且限定到所述第二层状氧化物超导体薄膜的图案。

    Magnetic control device and magnetic component and memory apparatus using the same
    15.
    发明公开
    Magnetic control device and magnetic component and memory apparatus using the same 审中-公开
    磁控制装置，和磁部件和存储装置使用这样的应用中，

    公开(公告)号：EP1134742A3

    公开(公告)日：2002-02-13

    申请号：EP01106055.5

    申请日：2001-03-12

    申请人： Matsushita Electric Industrial Co., Ltd.

    发明人： Adachi, Hideaki ,  Odagawa, Akihiro ,  Hiramoto, Masayoshi ,  Matsukawa, Nozomu, 1-101, Takagi-Manshon ,  Sakakima, Hiroshi

    IPC分类号： G11C11/16 ,  H01F10/32

    CPC分类号： G11C11/16

    摘要： A magnetic control device including an antiferromagnetic layer, a magnetic layer 2 placed in contact with one side of the antiferromagnetic layer 1, and an electrode placed in contact with another side of the antiferromagnetic layer 1, wherein the direction of the magnetization of the magnetic layer 2 is controlled by voltage applied between the magnetic layer 2 and the electrode 3. In particular, when an additional magnetic layer 5 is further laminated on the magnetic layer 2 placed in contact with the antiferromagnetic layer 1 via a non-magnetic layer 4, the direction of the magnetization of the controlled magnetic layer can be detected as a change in the electric resistance. Since such a magnetic control device, in principle, responds to the electric field or magnetic field, it forms a magnetic component capable of detecting an electric signal or a magnetic signal. In this case, the direction of the magnetization basically is maintained until the next signal is detected, so that such a device also can form an apparatus. Thus, a magnetic control device capable of controlling the magnetization with voltage and magnetic component and a memory apparatus using the same are provided.

    Field-effect type super-conducting device
    19.
    发明公开
    Field-effect type super-conducting device 失效
    现场效应型超导体装置

    公开(公告)号：EP0577074A3

    公开(公告)日：1994-05-11

    申请号：EP93110358.4

    申请日：1993-06-29

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Mizuno, Koichi ,  Adachi, Hideaki ,  Ichikawa, Yo ,  Setsune, Kentaro

    IPC分类号： H01L39/22 ,  H01L39/24

    CPC分类号： H01L39/146 ,  H01L39/228

    摘要： A field-effect type superconducting device includes a channel layer (2). The channel layer includes Bi-based oxide compound containing Cu. A source electrode (5) contacts the channel layer. A drain electrode (6) contacts the channel layer. A gate insulating film (3) made of insulating material extends on on the channel layer. A gate electrode (4) extends on the gate insulating film. Also disclosed is a superconducting device having a control electrode (14) extending on the insulating film (3) and having a constricted portion (50B).

    摘要翻译： 场效应型超导装置包括沟道层（2）。 沟道层包括含有Cu的Bi基氧化物。 源电极（5）与沟道层接触。 漏电极（6）与沟道层接触。 由绝缘材料制成的栅极绝缘膜（3）在沟道层上延伸。 栅电极（4）在栅极绝缘膜上延伸。 还公开了具有在绝缘膜（3）上延伸并具有收缩部分（50B）的控制电极（14）的超导装置。

    Thin-film superconductor and method of fabricating the same
    20.
    发明公开
    Thin-film superconductor and method of fabricating the same 失效
    SupraleitendedünneSchicht und ihr Herstellungsverfahren。

    公开(公告)号：EP0590560A2

    公开(公告)日：1994-04-06

    申请号：EP93115542.8

    申请日：1993-09-27

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Ichikawa, Yo ,  Mizuno,Koichi ,  Sato, Toshifumi ,  Adachi, Hideaki ,  Setsune, Kentaro

    IPC分类号： H01L39/12 ,  H01L39/24

    CPC分类号： H01L39/2461 ,  Y10S428/93 ,  Y10S505/702

    摘要： A thin-film superconductor includes a substrate (1), a ferroelectric film (2), and a superconducting oxide film (3). The ferroelectric film extends on the substrate. The ferroelectric film is made of a crystal containing Bi and O. The superconducting oxide film extends on the ferroelectric film, and containing Bi, Cu, and an alkaline-earth metal element. The superconducting oxide film may contain at least two different alkaline-earth metal elements.

    摘要翻译： 薄膜超导体包括基板，铁电体膜和超导氧化物膜。 铁电膜在基板上延伸。 铁电体膜由含有Bi和O的晶体制成。超导氧化物膜在铁电体膜上延伸，并含有Bi，Cu和碱土金属元素。 超导氧化物膜可以含有至少两种不同的碱土金属元素。