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43 条记录 (耗时 0.019 秒)

    Magnetoresistive element and magnetoresistive device using the same
    1.
    发明公开
    Magnetoresistive element and magnetoresistive device using the same 审中-公开
    磁阻元件以及这些磁 - 使用配置

    公开(公告)号：EP1191344A3

    公开(公告)日：2004-07-07

    申请号：EP01308169.0

    申请日：2001-09-26

    申请人： Matsushita Electric Industrial Co., Ltd.

    发明人： Adachi, Hideaki ,  Hiramoto, Masayoshi ,  Iijima, Kenji ,  Sakakima, Hiroshi

    IPC分类号： G01R33/09

    CPC分类号： H01L43/10 ,  B82Y25/00 ,  G01R33/093 ,  H01F10/324

    摘要： A magnetoresistive element with an improved magnetoresistive effect achieved by interposing a titanium nitride layer between a substrate and a spinel-type magnetic substance is provided. The magnetoresistive element comprises a substrate (1) and a multilayer film formed on the substrate, and the multilayer film includes a first magnetic layer (3), a nonmagnetic layer (4) formed on the first magnetic layer and a second magnetic layer (5) formed on this nonmagnetic layer. An electric current is supplied in a direction perpendicular to a film surface of the multilayer film, and a change in electrical resistance is detected by the electric current based on a change in a relative angle between a magnetization direction of the first magnetic layer and a magnetization direction of the second magnetic layer. The first magnetic layer (3) has a spinel crystal structure, and the multilayer film further includes a titanium nitride layer (2) interposed between the substrate (1) and the first magnetic layer (3).

    Superconducting tunnel junction element and superconducting device
    3.
    发明公开
    Superconducting tunnel junction element and superconducting device 失效
    一种超导隧道结元件，和超导设备

    公开(公告)号：EP0818831A3

    公开(公告)日：1998-09-09

    申请号：EP97111415.2

    申请日：1997-07-05

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD

    发明人： Adachi, Hideaki ,  Sakai, Masahiro ,  Odagawa, Akihiro ,  Setsune, Kentaro

    IPC分类号： H01L39/22

    CPC分类号： H01L39/225

    摘要： This invention provides a superconducting tunnel junction element showing satisfactory Josephson effect. The element includes a Bi-based layered compound such as Bi 2 Sr 2 (Ca 0.6 Y 0.4 )Cu 2 O 8 , Bi 2 Sr 2 Cu 2 O 6 and Bi 2 Sr 2 CaCu 2 O 8 as the barrier layer (13) between the superconducting oxide electrodes (11,12). The structural matching of the superconducting oxide with the Bi-based compound is supposed to be good. Some kinds of Cu-based superconducting oxides such as YSr 2 Cu 2.7 Re 0.3 O 7 , Sr 2 CaCu 2 O 6 and (La 0.9 Sr 0.1 ) 2 CuO 4 are used for the electrodes to obtain a Josephson element which can work at a high temperature. The superconducting device comprising the element has various uses such as magnetic detecting use, communicating use and computing use.

    Field-effect type superconducting device
    4.
    发明公开
    Field-effect type superconducting device 失效
    场效应型超导器件

    公开(公告)号：EP0701292A2

    公开(公告)日：1996-03-13

    申请号：EP95118306.0

    申请日：1993-06-29

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Mizuno, Koichi ,  Adachi, Hideaki ,  Ichikawa, Yo ,  Setsune, Kentaro

    IPC分类号： H01L39/22 ,  H01L39/24

    CPC分类号： H01L39/146 ,  H01L39/228

    摘要： A field-effect type superconducting device includes a channel layer (2). The channel layer includes superimposed first and second sub-layers (11, 12) which include respective first and second Bi-based oxide compounds containing Cu. Both source electrode (5) and drain electrode (6) contact the channel layer. A gate insulating film (3) made of insulating material extends on the channel layer. A gate electrode (4, 14, 15, 16) extends on the gate insulating film.

    摘要翻译： 场效应型超导器件包括沟道层（2）。 沟道层包括叠加的第一和第二子层（11,12），其包括各自的含Cu的第一和第二Bi基氧化物化合物。 源电极（5）和漏电极（6）都与沟道层接触。 由绝缘材料制成的栅极绝缘膜（3）在沟道层上延伸。 栅极（4,14,15,16）在栅极绝缘膜上延伸。

    Superconductor and method of fabricating superconductor
    5.
    发明公开
    Superconductor and method of fabricating superconductor 失效
    Supraleiter和Herstellungsverfahren。

    公开(公告)号：EP0624910A1

    公开(公告)日：1994-11-17

    申请号：EP94303459.5

    申请日：1994-05-13

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Adachi, Hideaki ,  Setsune, Kentaro ,  Mizuno, Koichi

    IPC分类号： H01L39/12

    CPC分类号： H01L39/126 ,  Y10S505/742

    摘要： A superconductor includes an oxide of HgA n +₃Cu n +₂O 2n+6+x , where "A" denotes alkaline earth element and "n" denotes an integer equal to or greater than 0, and "x" denotes a value in a range as -1 n+3 Cu n +₂O 2n+6 . The perovskite layer includes two layers of CuO₅ pyramids which are opposite to each other, "n" CuO₂ layers extending between the two pyramid layers, and 1-atom layers of the alkaline earth element A.

    摘要翻译： 超导体包括HgAn + 3Cun + 2O2n + 6 + x的氧化物，其中“A”表示碱土元素，“n”表示等于或大于0的整数，“x”表示在以下范围内的值： 1

    Field-effect type super-conducting device
    7.
    发明公开
    Field-effect type super-conducting device 失效
    Supraleitendes Bauelement des Feld-Effekt-Typs。

    公开(公告)号：EP0577074A2

    公开(公告)日：1994-01-05

    申请号：EP93110358.4

    申请日：1993-06-29

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Mizuno, Koichi ,  Adachi, Hideaki ,  Ichikawa, Yo ,  Setsune, Kentaro

    IPC分类号： H01L39/22 ,  H01L39/24

    CPC分类号： H01L39/146 ,  H01L39/228

    摘要： A field-effect type superconducting device includes a channel layer (2). The channel layer includes Bi-based oxide compound containing Cu. A source electrode (5) contacts the channel layer. A drain electrode (6) contacts the channel layer. A gate insulating film (3) made of insulating material extends on on the channel layer. A gate electrode (4) extends on the gate insulating film.
    Also disclosed is a superconducting device having a control electrode (14) extending on the insulating film (3) and having a constricted portion (50B).

    摘要翻译： 场效应型超导装置包括沟道层（2）。 沟道层包括含有Cu的Bi基氧化物。 源电极（5）与沟道层接触。 漏电极（6）与沟道层接触。 由绝缘材料制成的栅极绝缘膜（3）在沟道层上延伸。 栅电极（4）在栅极绝缘膜上延伸。 还公开了具有在绝缘膜（3）上延伸并具有收缩部分（50B）的控制电极（14）的超导装置。