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    Wavelength variable semiconductor laser element, apparatus and method for controlling the same
    12.
    发明公开
    Wavelength variable semiconductor laser element, apparatus and method for controlling the same 有权
    WellenlängenabstimmbarerHalbleiterlaser

    公开(公告)号：EP2348588A2

    公开(公告)日：2011-07-27

    申请号：EP11163427.5

    申请日：2008-03-07

    申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION

    发明人： Fujiwara, Naoki ,  Ishii, Hiroyuki ,  Oohashi, Hiromi ,  Okamoto, Hiroshi

    IPC分类号： H01S5/062 ,  H01S5/125

    CPC分类号： H01S5/06256 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/024 ,  H01S5/02407 ,  H01S5/02461 ,  H01S5/0268 ,  H01S5/0425 ,  H01S5/0612 ,  H01S5/0617 ,  H01S5/06808 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/34306 ,  H01S5/4087 ,  H01S2301/173

    摘要： A wavelength tunable semiconductor laser device which comprises an active region (43) for oscillating a laser beam, a plurality of wavelength tuning regions (46,47,49) each for shifting a wavelength of the laser beam, a plurality of thermal compensation regions wherein a thermal compensation region corresponding to each of the plurality of wavelength tuning regions (46,47,49) is provided adjacent to the respective wavelength tuning region, and wherein the thermal compensation region is configured to receive an input of electric power and to convert most of the inputted electric power to heat. Further, a controller (21) configured to always keep constant the sum of the electric power inputted into the compensation region and an electric power inputted into the wavelength tuning region is provided, wherein the thermal compensation regions are composed of a non-active waveguide having a first single mesa structure (52), wherein the non-active waveguide is configured to convert most of the inputted electric power to heat by an electric current injected into the non-active waveguide or a voltage applied thereto, wherein the active region (43) and the plurality of wavelength tuning regions (46,47,49) are composed of a waveguide having a second single mesa structure (51) other than the first single mesa structure (52), and wherein the distance between the first single mesa structure (52) and the second single mesa structure (51) is equal to or more than 3µm and equal to or less than the thickness of a substrate (41) of the wavelength tunable semiconductor laser device.

    摘要翻译： 一种波长可调谐半导体激光器件，包括用于振荡激光束的有源区域（43），用于移动激光束波长的多个波长调谐区域（46,47,49），多个热补偿区域，其中 与多个波长调谐区域（46,47,49）中的每一个相对应的热补偿区域设置成与相应的波长调谐区域相邻，并且其中热补偿区域被配置为接收电力的输入并且将大部分 的输入电力加热。 此外，提供一种控制器（21），其被配置为始终保持恒定的输入到补偿区域的电力的总和和输入到波长调谐区域的电力，其中热补偿区域由具有 第一单台面结构（52），其中所述非有源波导被配置为通过注入到所述非有源波导中的电流或施加到所述非有源波导的电压将大部分输入的电功率转换成热量，其中所述有源区域 ）和所述多个波长调谐区（46,47,49）由具有除了所述第一单台面结构（52）之外的第二单台面结构（51）的波导构成，并且其中所述第一单台面结构 （52）和第二单台面结构（51）等于或大于3μm且等于或小于波长可调半导体激光器件的衬底（41）的厚度。