公开(公告)号：EP2761834B1

公开(公告)日：2016-01-20

申请号：EP12794567.3

申请日：2012-09-30

申请人： QUALCOMM Incorporated

发明人： ZHONG, Cheng ,  DANG, Vannam ,  LI, Miao ,  MAAROUF, Fares K. ,  SOWLATI, Tirdad

IPC分类号： H04L25/02 ,  H03K19/0185

CPC分类号： H04L25/0274 ,  H04L25/0278

公开(公告)号：EP2737473A1

公开(公告)日：2014-06-04

申请号：EP12743330.8

申请日：2012-07-25

申请人： Qualcomm Incorporated

发明人： LI, Miao ,  KONG, Xiaohua ,  DANG, Nam V. ,  ZHONG, Cheng

IPC分类号： G09G5/00 ,  H04L1/00 ,  H04L1/20 ,  H04N5/00

CPC分类号： G01R31/3177 ,  G06F1/04 ,  G09G5/006 ,  G09G2350/00 ,  G09G2370/12

摘要： System and method for testing a high speed data path without generating a high speed bit clock, includes selecting a first high speed data path from a plurality of data paths for testing. Coherent clock data patterns are driven on one or more of remaining data paths of the plurality of data paths, wherein the coherent clock data patterns are in coherence with a low speed base clock. The first high speed data path is sampled by the coherent clock data patterns to generate a sampled first high speed data path, which is then tested at a speed of the low speed base clock.

公开(公告)号：EP2232494A1

公开(公告)日：2010-09-29

申请号：EP09701299.1

申请日：2009-01-09

申请人： QUALCOMM Incorporated

发明人： YOON, Sei, Seung ,  ZHONG, Cheng ,  PARK, Dongkyu ,  ABU-RAHMA, Mohamed, H.

IPC分类号： G11C11/16

CPC分类号： G11C8/08 ,  G11C11/1673

摘要： Systems and methods of selectively applying negative voltage to word lines during memory device read operation are disclosed. In an embodiment, a memory device (100) includes a word line logic circuit (110) coupled to a plurality of word lines (108) and adapted to selectively apply a positive voltage (V) to a selected word line coupled to a selected memory cell that includes a magnetic tunnel junction (MTJ) device and to apply a negative voltage (NV) to unselected word lines.

摘要翻译： 存储器装置读出在外科手术期间施加到字线负电压的系统和选择性的方法是游离缺失盘。 ，实施例中的存储装置包括耦合到字线和angepasst多个A字线逻辑电路以选择性地施加正电压到耦合到选定存储器单元的选定字线确实包括磁性隧道结（MTJ）装置和 负电压施加到未选字线。

公开(公告)号：EP4406120A1

公开(公告)日：2024-07-31

申请号：EP22789730.3

申请日：2022-09-08

申请人： QUALCOMM INCORPORATED

发明人： YE, Jianwen ,  SUN, Bo ,  ZHONG, Cheng

IPC分类号： H03L7/081 ,  H03L7/24

CPC分类号： H03L7/24 ,  H03L7/0814

公开(公告)号：EP2486468B1

公开(公告)日：2018-11-14

申请号：EP10775953.2

申请日：2010-10-07

申请人： Qualcomm Incorporated

发明人： ZHONG, Cheng ,  DANG, Nam, V. ,  VUONG, Hung, Q. ,  KONG, Xiaohua

IPC分类号： G06F1/32 ,  H04N5/775

CPC分类号： G06F1/3278 ,  G06F1/1632 ,  G06F1/266 ,  G06F1/3203 ,  G06F1/3206 ,  G06F1/3281 ,  G06F11/2289 ,  G06F11/3041 ,  G06F11/3048 ,  G06F11/3051 ,  G06F11/3089 ,  G06F13/4022 ,  G06F13/4081 ,  Y02D10/151 ,  Y10T307/76

摘要： Power saving for hot plug detect (HPD) is disclosed. In a particular embodiment, a method includes detecting, at a source device that is connectable to a sink device, a connection of the source device to the sink device via a connector. The source device includes a DC voltage source and the connection is detected without consuming power from the DC voltage source.

公开(公告)号：EP2374129B1

公开(公告)日：2016-11-16

申请号：EP09793651.2

申请日：2009-12-07

申请人： QUALCOMM Incorporated

发明人： PARK, Dongkyu ,  DAVIERWALLA, Anosh B. ,  ZHONG, Cheng ,  ABU-RAHMA, Mohamed Hassan Soliman ,  YOON, Sei Seung

IPC分类号： G11C7/06 ,  G11C7/22 ,  G11C11/16

CPC分类号： G11C7/22 ,  G11C7/06 ,  G11C11/1673 ,  G11C11/1693 ,  G11C2207/065 ,  G11C2207/2281

公开(公告)号：EP2777157A2

公开(公告)日：2014-09-17

申请号：EP12798939.0

申请日：2012-11-12

申请人： Qualcomm Incorporated

发明人： ZHONG, Cheng ,  NAVUBOTHU, Swarna L. ,  DANG, Nam V. ,  KONG, Xiaohua

IPC分类号： H03L7/089 ,  H03L7/06

CPC分类号： H03L7/0893

摘要： A method includes tracking a tuning voltage at a first circuit coupled to a first drain node of a first supply of a charge pump. The method also includes tracking the tuning voltage at a second circuit coupled to a second drain node of a second supply of the charge pump. The method further includes stabilizing a first voltage of the first drain node and a second voltage of the second drain node responsive to the tuning voltage.

公开(公告)号：EP3120513B1

公开(公告)日：2018-04-25

申请号：EP15712766.3

申请日：2015-03-12

申请人： Qualcomm Incorporated

发明人： KONG, Xiaohua ,  ZHONG, Cheng ,  NAVUBOTHU, Swarna Latha

IPC分类号： H04L25/02 ,  H04L25/14

CPC分类号： G06F1/04 ,  G11C11/4076 ,  H03K5/01 ,  H03K2005/00013 ,  H04L25/0292 ,  H04L25/14

摘要： A clock generator is provided that is immune to skew between bits in digital words generated by a multi-phase receiver.

公开(公告)号：EP2245630B1

公开(公告)日：2013-05-01

申请号：EP08861010.0

申请日：2008-12-19

申请人： QUALCOMM Incorporated

发明人： YOON, Sei, Seung ,  ZHONG, Cheng ,  PARK, Dongkyu ,  ABU-RAHMA, Mohamed, H.

IPC分类号： G11C11/16

CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

公开(公告)号：EP2382633A1

公开(公告)日：2011-11-02

申请号：EP10700196.8

申请日：2010-01-08

申请人： QUALCOMM Incorporated

发明人： ABU-RAHMA, Mohamed, Hassan ,  SONG, Seung-Chul ,  YOON, Sei, Seung ,  PARK, Dongkyu ,  ZHONG, Cheng ,  DAVIERWALLA, Anosh, B.

IPC分类号： G11C11/16

CPC分类号： G11C11/1675 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673

摘要： A system and method to read and write data in magnetic random access memories are disclosed. In a particular embodiment, a device (100) includes a spin transfer torque magnetic tunnel junction (STT-MT J) element (102) and a transistor (104) with a first gate (106) and a second gate (108) coupled to the STT-MTJ element.