MULTISPECTRAL IMAGING DEVICE FOR RANGE ESTIMATION
    16.
    发明公开
    MULTISPECTRAL IMAGING DEVICE FOR RANGE ESTIMATION 审中-公开
    MULTISPEKTRALE ABBILDUNGSVORRICHTUNGFÜRABSTANDSSCHÄTZUNG

    公开(公告)号:EP3151542A1

    公开(公告)日:2017-04-05

    申请号:EP16191155.7

    申请日:2016-09-28

    Abstract: An electronic device includes a lens, an optical filter asymmetric to an optical axis of the lens, and an image sensor including a visible light image sensor and a non-visible light image sensor. The optical filter has an opening and is configured to transmit visible light and block at least one type of non-visible light. The visible light image sensor is configured to sense the visible light and the non-visible light image sensor is configured to sense the at least one type of non-visible light.

    Abstract translation: 电子设备包括透镜,与透镜的光轴不对称的滤光器,以及包括可见光图像传感器和不可见光图像传感器的图像传感器。 光学滤光器具有开口并且被配置为透射可见光并且阻挡至少一种类型的不可见光。 可见光图像传感器被配置为感测可见光,并且不可见光图像传感器被配置为感测至少一种类型的不可见光。

    SENSOR-EMBEDDED DISPLAY PANEL AND ELECTRONIC DEVICE

    公开(公告)号:EP4047661A2

    公开(公告)日:2022-08-24

    申请号:EP22156043.6

    申请日:2022-02-10

    Abstract: A sensor-embedded display panel includes a substrate, first, second, and third light emitting elements on the substrate, the first, second, and third light emitting elements including separate, respective light emitting layers, and a light absorbing layer on the substrate, the light absorbing layer being in parallel with the light emitting layer along the surface direction of the substrate, wherein the first, second, and third light emitting elements and the light absorption sensor include a first common auxiliary layer that is continuously disposed on the light emitting layers and the light absorbing layer, and a common electrode on the first common auxiliary layer and configured to apply a common voltage to the first, second, and third light emitting elements and the light absorption sensor, and the light absorption sensor includes an n-type semiconductor layer between the light absorbing layer and the first common auxiliary layer and including an n-type semiconductor.

    SENSORS AND ELECTRONIC DEVICES
    19.
    发明公开

    公开(公告)号:EP3910677A1

    公开(公告)日:2021-11-17

    申请号:EP21170957.1

    申请日:2021-04-28

    Abstract: A sensor includes a first electrode and a second electrode, and a photo-active layer between the first electrode and the second electrode. The photo-active layer includes a light absorbing semiconductor configured to form a Schottky junction with the first electrode. The photo-active layer has a charge carrier trapping site configured to capture photo-generated charge carriers generated based on the light absorbing semiconductor absorbing incident light that enters at least the photo-active layer at a position adjacent to the first electrode. The sensor is configured to have an external quantum efficiency (EQE) that is adjusted based on a voltage bias being applied between the first electrode and the second electrode.

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