公开(公告)号：EP0483688A3

公开(公告)日：1992-07-15

申请号：EP91118253.3

申请日：1991-10-25

申请人： TOYODA GOSEI CO., LTD. ,  NAGOYA UNIVERSITY ,  RESEARCH DEVELOPMENT CORPORATION OF JAPAN

发明人： Kotaki, Masahiro, c/o Toyoda Gosei Co., Ltd. ,  Akasaki, Isamu ,  Amano, Hiroshi

IPC分类号： H01L33/00

CPC分类号： H01L33/382 ,  H01L33/007 ,  H01L33/32 ,  H01L33/325 ,  H01L33/40

摘要： There are disclosed two types of gallium nitride LED having the pn junction. An LED of gallium nitride compound semiconductor (Al x Ga 1-x N, where 0≦x

公开(公告)号：EP0277597A3

公开(公告)日：1989-09-20

申请号：EP88101267.8

申请日：1988-01-28

申请人： TOYODA GOSEI CO., LTD. ,  NAGOYA UNIVERSITY

发明人： Manabe, Katsuhide ,  Okazaki, Nobuo ,  Akasaki, Isamu ,  Hiramatsu, Kazumasa ,  Amano, Hiroshi

IPC分类号： H01L33/00 ,  H01L21/205 ,  C30B25/20

CPC分类号： H01L33/40 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/0008 ,  H01L33/007 ,  H01L33/32

摘要： A thin film of SiO₂ (32) is patterned on an N layer consist­ing of N-type Aℓ x Ga 1-x N (inclusive of x = 0) (31). Next, I-type Aℓ x Ga 1-x N (inclusive of x = 0) (33) is selectively grown and the portion on the N layer (31) grows into an I-layer (33) consisting an active layer of a light emitting diode, and that on the SiO₂ thin film (32) grows into a conductive layer (34). Electrodes (35,36) are formed on the I-layer (33) and conductive layer (34) to constitute the light emitting diode. Also, on the surface a ({11 2 0}) of a sapphire substrate (24), a buffer layer (30) consisting of aluminum nitride is formed, onto which a gallium nitride group semiconductor (31) is formed.

公开(公告)号：EP0277597B1

公开(公告)日：1994-07-13

申请号：EP88101267.8

申请日：1988-01-28

申请人： TOYODA GOSEI CO., LTD. ,  NAGOYA UNIVERSITY

发明人： Manabe, Katsuhide ,  Okazaki, Nobuo ,  Akasaki, Isamu ,  Hiramatsu, Kazumasa ,  Amano, Hiroshi

IPC分类号： H01L33/00 ,  H01L21/205 ,  C30B25/20

CPC分类号： H01L33/40 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/0008 ,  H01L33/007 ,  H01L33/32

公开(公告)号：EP0277597A2

公开(公告)日：1988-08-10

申请号：EP88101267.8

申请日：1988-01-28

申请人： TOYODA GOSEI CO., LTD. ,  NAGOYA UNIVERSITY

发明人： Manabe, Katsuhide ,  Okazaki, Nobuo ,  Akasaki, Isamu ,  Hiramatsu, Kazumasa ,  Amano, Hiroshi

IPC分类号： H01L33/00 ,  H01L21/205 ,  C30B25/20

CPC分类号： H01L33/40 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/0008 ,  H01L33/007 ,  H01L33/32

摘要： A thin film of SiO₂ (32) is patterned on an N layer consist­ing of N-type Aℓ x Ga 1-x N (inclusive of x = 0) (31). Next, I-type Aℓ x Ga 1-x N (inclusive of x = 0) (33) is selectively grown and the portion on the N layer (31) grows into an I-layer (33) consisting an active layer of a light emitting diode, and that on the SiO₂ thin film (32) grows into a conductive layer (34). Electrodes (35,36) are formed on the I-layer (33) and conductive layer (34) to constitute the light emitting diode. Also, on the surface a ({11 2 0}) of a sapphire substrate (24), a buffer layer (30) consisting of aluminum nitride is formed, onto which a gallium nitride group semiconductor (31) is formed.

摘要翻译： 在由N型A 1 x Ga 1-x N（包括x = 0）（31）组成的N层上构图SiO 2（32）的薄膜。 接下来，选择性地生长I型A 1 x Ga 1-x N（包括x = 0）（33），并且N层（31）上的部分生长成I层（33），其包括发光的有源层 二极管，并且SiO 2薄膜（32）上的二极管生长成导电层（34）。 电极（35,36）形成在I层（33）和导电层（34）上以构成发光二极管。 此外，在蓝宝石衬底（24）的表面上形成由氮化铝构成的缓冲层（30），形成氮化镓族半导体（31）。