METHOD OF FORMING LOW-DIELECTRIC-CONSTANT FILM, AND SEMICONDUCTOR SUBSTRATE WITH LOW-DIELECTRIC-CONSTANT FILM
    11.
    发明公开
    METHOD OF FORMING LOW-DIELECTRIC-CONSTANT FILM, AND SEMICONDUCTOR SUBSTRATE WITH LOW-DIELECTRIC-CONSTANT FILM 有权
    方法制造具有低介电常数和半导体器件的介电膜SO一部电影

    公开(公告)号:EP1197999A4

    公开(公告)日:2006-04-12

    申请号:EP00981780

    申请日:2000-12-15

    IPC分类号: H01L21/314 H01L21/316

    CPC分类号: H01L21/316

    摘要: A method of forming silica film of low dielectric constant on a semiconductor substrate comprises (a) applying a silica solution of low dielectric constant for film deposition on a semiconductor substrate; (b) heat-treating the resulting film at 50 to 350 degrees C; and (c) baking the film at 350 to 450 degrees C in an inactive gas atmosphere containing 500 to 15,000 ppm of oxygen by volume. Preferably, the heat-treating (b) is carried out at 150 to 350 degrees C for 1 to 3 minutes in the air. Preferably, the baking (c) is carried out with the semiconductor substrate held on a hot plate maintained at 350 to 450 degrees C. According to such a method, a semiconductor substrate provided with silica film of low dielectric constant has a dielectric constant of less than 3, low moisture adsorption, and high film strength, while being free of damage to the metalized wiring on the semiconductor substrate.

    PHOTOELECTRIC CELL
    12.
    发明公开
    PHOTOELECTRIC CELL 有权
    PHOTOELEKTRISCHE ZELLE

    公开(公告)号:EP1119068A4

    公开(公告)日:2006-04-12

    申请号:EP00940898

    申请日:2000-06-30

    摘要: A photoelectric cell comprising a substrate having an electrode layer (21) on the surface thereof and a semiconductor film (22) to which a photosensitizing material is adsorbed and which is formed on the electrode layer surface, and another substrate having on the surface thereof an electrode layer (23), the both substrates being disposed with an electrolyte layer (24) therebetween, at least one substrate and one electrode layer having a transparency, wherein the cell is provided with any one of the following features 1 to 4, and has excellent characteristics, such as a quick electron mobility, an excellent extended stability of an electrolyte layer, and a high photoelectric conversion efficiency. 1. The electrolyte layer consists of an electrolyte and a liquid crystal. 2. Spacer particles (27) are interposed between the semiconductor film (22) and the electrode layer (21). 3. The spacer particles are buried in the semiconductor film, with part of them exposed from the semiconductor film and in contact with the electrode layer (23). 4. The semiconductor film contains metal oxide semiconductor particles having a specific core-shell structure.

    摘要翻译: 一种光电元件,其特征在于,具有在表面具有电极层(21)的基板和吸附光敏材料的半导体膜(22),该半导体膜(22)形成在电极层表面上,另一基板在其表面具有 所述两个基板在其间设置有电解质层(24),至少一个基板和具有透明性的一个电极层,其中所述电池设置有以下特征1至4中的任一个,并且具有电极层 诸如快速电子迁移率,电解质层的优异的扩展稳定性以及高光电转换效率的优良特性。 1.电解质层由电解质和液晶组成。 2.在半导体膜(22)和电极层(21)之间插入间隔粒子(27)。 3.间隔粒子埋入半导体膜中,其中一部分从半导体膜中暴露出来并与电极层(23)接触。 4.半导体膜包含具有特定核 - 壳结构的金属氧化物半导体粒子。

    METHOD OF MANUFACTURING INTEGRATED CIRCUIT, AND SUBSTRATE WITH INTEGRATED CIRCUIT FORMED BY THE METHOD OF MANUFACTURING INTEGRATED CIRCUIT
    13.
    发明公开
    METHOD OF MANUFACTURING INTEGRATED CIRCUIT, AND SUBSTRATE WITH INTEGRATED CIRCUIT FORMED BY THE METHOD OF MANUFACTURING INTEGRATED CIRCUIT 有权
    用于生产集成电路和衬底,通过制定的处理集成电路集成电路受过训练

    公开(公告)号:EP1280193A4

    公开(公告)日:2006-01-04

    申请号:EP01921998

    申请日:2001-04-23

    CPC分类号: H01L21/76877 H01L21/288

    摘要: A method of manufacturing an integrated circuit capable of accumulating conductive fine particles efficiently and densely in micro wiring grooves and connection holes, forming a circuit with less wiring resistance and high density, and allowing high integration to be formed so as to provide excellent profitability, comprising the step of applying an integrated circuit formation coating liquid containing conductive fine particles on a substrate having wiring grooves formed therein, characterized in that the integrated circuit formation coating liquid is applied to the wiring grooves while ultrasonic wave is radiated on the coating liquid.

    摘要翻译: 提供了一种处理在集成电路制造,不仅可以worin导电性微粒可以以分钟布线通道有效且致密地沉积和连接孔但如此低布线电阻和高密度的电路可被形成​​并被worin高度 整合由此可以实现带来的经济优势。 特别地,提供了一种用于在集成电路的制造方法,包括涂布设置有布线通道与涂液用于集成电路形成含有导电性微粒的基片,从而在基板上形成集成电路的,worin涂布液用于集成 电路形成同时暴露于超声波施加到布线通道。

    COATING FLUID FOR FORMING HARD COATING AND SUBSTRATES COVERED WITH HARD COATING
    15.
    发明公开
    COATING FLUID FOR FORMING HARD COATING AND SUBSTRATES COVERED WITH HARD COATING 有权
    液体涂料组合物用于硬质涂层,具有同等涂基材的形成

    公开(公告)号:EP1041123A4

    公开(公告)日:2003-05-28

    申请号:EP98959192

    申请日:1998-12-14

    摘要: A coating liquid for forming on a substrate surface a hard coat film which exhibits a high refractive index, being excellent in resistance to hot water, weather resistance, scuffing resistance, attrition resistance and dye affinity, and which does not exhibit photochromism, is provided. A coating liquid for forming a hard coat film, comprises a matrix-forming component and composite metal oxide particles of 1 to 100 nm average particle size, composed either of an iron oxide component and a titanium oxide component used at a specified ratio or an iron oxide component, a titanium oxide component and a silica component used at a specified ratio. A substrate coated with a hard coat film is formed by applying the above coating liquid to the substrate surface and effecting drying.

    摘要翻译: 用于形成在基板的涂布液表面的硬涂层膜表现出高折射率,具有极好的耐热水性,耐候性,耐擦伤性,耐磨耗性和染料亲和力性,并且不表现出光致变色,提供。 用于形成硬质涂层膜,电影,A涂布液包含基质形成成分和1至100nm的平均粒径的复合金属氧化物微粒的,不是由以指定的比率或以铁使用的氧化铁成分和钛氧化物组分的 氧化物成分,氧化钛成分和以指定的比率所使用的二氧化硅成分。 涂有硬涂层A底膜是通过将上述涂布液涂布在基材表面及其影响干燥而形成。

    COATING FLUID FOR LOW-PERMITTIVITY SILICA COATING AND SUBSTRATE PROVIDED WITH LOW-PERMITTIVITY COATING
    16.
    发明公开
    COATING FLUID FOR LOW-PERMITTIVITY SILICA COATING AND SUBSTRATE PROVIDED WITH LOW-PERMITTIVITY COATING 失效
    液体涂料组合物用于低渗透涂布基材二氧化硅涂层

    公开(公告)号:EP0890623A4

    公开(公告)日:1999-09-08

    申请号:EP97907422

    申请日:1997-03-21

    CPC分类号: C09D183/02 C09D183/04

    摘要: A coating fluid for low-permittivity silica coating which can form an insulating film having a low relative permittivity of 3 or less and is excellent in the adhesion to a surface to be coated, mechanical strengths, chemical resistances such as alkali resistance, and a cracking resistance, and can remarkably level irregularities of the surface to be coated; and a substrate having a low-permittivity silica coating formed thereon. The coating fluid contains fine particles of silica, an alkoxysilane represented by the following general formula and/or a silane halide represented by the following general formula and/or a silane halide represented by the following general formula or a product of a reaction with a hydrolyzate thereof: XnSi(OR)4-n or XnSiX'4-n (wherein X represents H, F, 1-8 C alkyl, aryl, or vinyl; R represents H, 1-8 C alkyl, aryl, or vinyl; X' represents a halogen atom; and n is an integer of 0 to 3).

    METHOD AND APPARATUS FOR HYDROGENATING HEAVY OIL.
    19.
    发明公开
    METHOD AND APPARATUS FOR HYDROGENATING HEAVY OIL. 失效
    方法和装置加氢重油。

    公开(公告)号:EP0665282A4

    公开(公告)日:1996-01-10

    申请号:EP94924380

    申请日:1994-08-17

    IPC分类号: C10G45/02 C10G45/16 C10G65/04

    CPC分类号: C10G65/04

    摘要: A heavy oil hydrogenating method which comprises (a) a step of introducing heavy oil into a fixed bed type reaction column packed with a hydrogenation catalyst and conducting heavy oil hydrogenation, and (b) a step of introducing the heavy oil hydrogenated in the step (a) into a suspension type reaction column packed with a hydrogenation catalyst and conducting the hydrogenation. A hydrogenation apparatus which comprises (a') a fixed bed type reaction column packed with a heavy-oil hydrogenation catalyst and (b') a suspension type reaction column packed with a heavy-oil hydrogenation catalyst for hydrogenating the heavy oil hydrogenated in the fixed bed type reaction column. The present invention can prolong the operation time of the heavy oil hydrogenation.