公开(公告)号：EP1813655A4

公开(公告)日：2010-05-26

申请号：EP05793074

申请日：2005-10-11

申请人： CATALYSTS & CHEM IND CO

发明人： ARAO HIROKI ,  EGAMI MIKI ,  NAKASHIMA AKIRA ,  KOMATSU MICHIO

IPC分类号： C09D183/04 ,  B05D7/24 ,  C01B33/12 ,  C08L83/08 ,  C09D5/25 ,  C09D7/80 ,  C09D183/02 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768

CPC分类号： C09D183/04 ,  C08L83/08 ,  C09C1/30 ,  C09C1/3081 ,  C09D183/02 ,  C23C18/1212 ,  C23C18/1295 ,  C23C18/14 ,  H01L21/316 ,  C08L2666/02

公开(公告)号：EP1564798A4

公开(公告)日：2006-01-18

申请号：EP03758926

申请日：2003-10-27

申请人： CATALYSTS & CHEM IND CO ,  FUJITSU LTD

发明人： NAKASHIMA AKIRA ,  EGAMI MIKI ,  KOMATSU MICHIO ,  NAKATA YOSHIHIRO ,  YANO EI ,  SUZUKI KATSUMI

IPC分类号： C08G77/08 ,  H01L21/316 ,  H01L21/312 ,  C09D183/02 ,  C09D183/04

CPC分类号： C09D183/02 ,  C08G77/08 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/316 ,  H01L21/31695

摘要： A low-dielectric-constant amorphous silica coating whose relative dielectric constant is as low as 2.5 or below and whose Young's modulus of elasticity is 6.0 GPa or higher, which low-dielectric-constant amorphous silica coating excels in hydrophobicity; and a method of forming the low-dielectric-constant amorphous silica coating. A tetraalkyl orthosilicate (TAOS) and specified alkoxysilane (AS) are hydrolyzed in the presence of a tetraalkylammonium hydroxide (TAAOH), thereby obtaining a liquid composition containing a silicon compound. Thereafter, the liquid composition is applied onto a substrate and subjected to heating and firing treatments, thereby obtaining a coating. The thus obtained coating has smooth surface and has specified pores thereinside.

摘要翻译： 本发明涉及到在无定形二氧化硅 - 基于涂膜具有2.5或以下的低介电常数和6.0 10GPa以上的杨氏模量并且具有优异的疏水性，并形成相同的方法。 含有通过水解在氢氧化四烷基铵存在下的四烷基原硅酸盐（TAOS）和烷氧基硅烷的具体（AS）而获得的有机硅化合物的液体组合物（TAAOH）的制备。 然后将液体组合物涂布在底物，加热固化，得到涂料成膜。 的涂膜得到的如所描述的具有光滑的表面，因此具有特定微孔在其中。

公开(公告)号：EP0992556A4

公开(公告)日：2005-04-27

申请号：EP99913676

申请日：1999-04-15

申请人： CATALYSTS & CHEM IND CO

发明人： NAKASHIMA AKIRA ,  TONAI ATSUSHI ,  KOMATSU MICHIO

IPC分类号： C09D183/14 ,  G03F7/09 ,  C08G77/452 ,  C09D5/24 ,  C09D183/10 ,  C09D201/00 ,  H01L21/312

CPC分类号： G03F7/093 ,  C08K3/34 ,  C08K9/04 ,  C09D7/62 ,  C09D7/67 ,  C09D183/14 ,  Y10T428/249969 ,  Y10T428/24999 ,  Y10T428/2962 ,  Y10T428/31507 ,  Y10T428/31663 ,  C08L2666/54

摘要： The coating liquid for forming a silica-containing film with a low dielectric constant according to the present invention comprises: (i) fine particles of silica having a phenyl group thereon, and (ii') an oxidatively decomposable resin, the weight ratio of the fine particles of silica having a phenyl group to the oxidatively decomposable resin being in the range of 0.5 to 5. By virtue of the present invention, there can be formed a stable silica-containing film, which has a dielectric constant as low as 3 or less, which is excellent in microphotolithography workability, adherence to a substrate surface, chemical resistance such as alkali resistance and crack resistance, and which exhibits excellent planarizing performance.

公开(公告)号：EP1035183A4

公开(公告)日：2004-10-20

申请号：EP99933135

申请日：1999-07-28

申请人： CATALYSTS & CHEM IND CO

发明人： KOMATSU MICHIO ,  NAKASHIMA AKIRA ,  EGAMI MIKI

IPC分类号： C09D5/25 ,  C09D183/04 ,  H01L21/312 ,  H05K3/46

CPC分类号： H01L21/3122 ,  C09D183/04 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  Y10T428/31511 ,  Y10T428/31663 ,  Y10T428/31725 ,  Y10T428/31786 ,  Y10T428/31855 ,  C08L2666/02

摘要： A coating fluid capable of forming a silica-based coating film having a relative permittivity as low as 3 or below and a low density and excellent in resistance to oxygen plasma and suitability for other processings; and a substrate having a coating film having such properties. The coating fluid is characterized by comprising a polymer composition comprising (i) an alkoxysilane represented by the following general formula (I) and/or a hydrolyzate of at least one halogenated silane represented by the following general formula (II) and (ii) a readily decomposable resin. In the formulas (I): XnSi(OR)4-n and (II) XnSiX'4-n X represents hydrogen, fluorine, C1-8 alkyl, fluoroalkyl, aryl or vinyl; R represents hydrogen, C1-8 alkyl, aryl, or vinyl; X' represents halogeno; and n is an integer of 0 to 3.

摘要翻译： 本发明提供一种涂布液，其能够形成相对介电常数低至3以下且密度低且耐氧等离子体性优异且适合其他加工的二氧化硅系涂膜， 以及具有具有这种性质的涂膜的基材。 （i）由下述通式（I）表示的烷氧基硅烷和/或由下述通式（II）表示的至少一种卤代硅烷的水解产物和（ii）由式 易分解的树脂。 在式（I）中：XnSi（OR）4-n和（II）XnSiX'4-n X代表氢，氟，C1-8烷基，氟代烷基，芳基或乙烯基; R代表氢，C 1-8烷基，芳基或乙烯基; X'代表卤代; 并且n是0至3的整数。

公开(公告)号：EP0728531A4

公开(公告)日：1996-10-16

申请号：EP95928022

申请日：1995-08-11

申请人： CATALYSTS & CHEM IND CO

发明人： NAKASHIMA AKIRA ,  KOMATSU MICHIO ,  OHNO KENJI ,  TERAMOTO KUNIHARU ,  INOUE KAZUAKI

IPC分类号： B01J19/00 ,  B05D1/20 ,  G11B5/84 ,  G11B7/26 ,  H01L21/768

CPC分类号： B05D1/20 ,  Y10T428/24372 ,  Y10T428/24893

摘要： A method for forming a particle layer on a substrate comprising the steps of: developing a dispersion liquid (I) obtained by dispersing in a dispersion medium solid particles surface-treated with a compound capable of forming a binder, on a liquid (II) incompatible with the dispersion medium; removing the dispersion medium from the dispersion liquid (I) to form a particle layer in which the solid particles are arranged; and transferring the particle layer onto a substrate. The method provides a substrate with a particle layer having a high adhesion to the substrate. A method for flattening an irregular substrate surface comprises the steps of: transferring the particle layer formed by the first method to an irregular surface of a substrate; and removing portions of the particle layer formed on protuberances of the substrate. A particle-layered substrate comprises a particle layer obtained by the above methods on the substrate.

公开(公告)号：EP1814150A4

公开(公告)日：2010-05-26

申请号：EP05793832

申请日：2005-10-11

申请人： CATALYSTS & CHEM IND CO

发明人： EGAMI MIKI ,  ARAO HIROKI ,  NAKASHIMA AKIRA ,  KOMATSU MICHIO

IPC分类号： H01L21/312 ,  C08G77/04 ,  C09D183/02 ,  C09D183/04

CPC分类号： C09D183/04 ,  C09D183/02 ,  H01L21/3121 ,  Y10T428/249953

摘要： Disclosed is a coating liquid for forming a protective film having high film strength and a low specific dielectric constant for semiconductor processing, and a method for preparing the coating liquid. The coating liquid is a liquid composition comprising (a) silicon compound obtained by hydrolyzing tetraalkyl orthosilicate (TAOS) and alkoxysilane (AS) in the presence of tetraalkyl ammonium hydroxide (TAAOH) and water, or a silicon compound obtained by hydrolyzing or partially hydrolyzing tetraalkyl orthosilicate (TAOS) in the presence of tetraalkyl ammonium hydroxide (TAAOH) and water, mixing the hydrolyzed or partially hydrolyzed product with alkoxysilane (AS) or a hydrolyzed or partially hydrolyzed product thereof, and hydrolyzing all or a portion of the mixture, (b) an organic solvent, and (c) water. The coating liquid is characterized in that a quantity of water contained in the liquid composition is in the range from 35 to 65% by weight.

公开(公告)号：EP0951057A4

公开(公告)日：2000-04-05

申请号：EP97909715

申请日：1997-10-31

申请人： CATALYSTS & CHEM IND CO

发明人： MURAGUCHI RYO ,  NAKASHIMA AKIRA ,  TONAI ATSUSHI ,  KOMATSU MICHIO ,  MACHIDA KATSUYUKI ,  KYURAGI HAKARU ,  IMAI KAZUO

IPC分类号： H01L21/316 ,  B05D1/28 ,  G11B5/84 ,  B05D7/00 ,  B05D7/24 ,  C09D183/16 ,  G02F1/1333 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/3205 ,  H01L21/768 ,  H01L27/14

CPC分类号： B05D1/286 ,  G11B5/8404

摘要： A method of easily flattening an uneven surface of a substrate is provided. A fine spherical particle-containing film is formed on a smooth substrate surface, and the surface of the resultant film on the substrate and an uneven surface of a substrate are then brought into close contact with each other. Thus, the fine spherical particle-containing film is transferred to the uneven surface of the substrate, whereby the uneven surface is flattened.

摘要翻译： 本发明提供一种容易平坦化具有不平坦表面的基板的凹凸表面的方法。 该方法包括在平滑基材的表面上形成含有球状微粒的涂膜的步骤; 将具有含有球状微粒的涂膜的光滑基板的表面粘附到具有不平坦表面的基板的凹凸表面上; 将含有球状微粒的涂膜转印到基板的不平坦表面，使得凹凸表面平坦化。

公开(公告)号：EP1566416A4

公开(公告)日：2007-02-28

申请号：EP03758925

申请日：2003-10-27

申请人： CATALYSTS & CHEM IND CO ,  FUJITSU LTD

发明人： NAKASHIMA AKIRA ,  EGAMI MIKI ,  KOMATSU MICHIO ,  NAKATA YOSHIHIRO ,  YANO EI ,  SUZUKI KATSUMI

IPC分类号： C01B33/12 ,  C09D183/04 ,  C08G77/08 ,  C09D5/25 ,  C09D183/02 ,  H01L21/312 ,  H01L21/316

CPC分类号： H01L21/02126 ,  C08G77/08 ,  C09D183/04 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/316

摘要： The present invention relates to a coating liquid for forming an amorphous silica-based coating film with a low dielectric constant of 2.5 or below and the Young' s modulus of 6.0 GPa or more and having excellent hydrophobic property, and to a method of preparing the same. The coating liquid may contain a silicon compound obtained by hydrolyzing tetraalkyl ortho silicate (TAOS) and specific alkoxysilane (AS) in the presence of tetraalkyl ammonium hydroxide (TAAOH), or may contain a silicon compound obtained by hydrolyzing or partially hydrolyzing tetraalkyl ortho silicate (TAOS) in the presence of tetraalkyl ammonium hydroxide (TAAOH), mixing the reaction product with specific alkoxysilane or a hydrolysate or a partial hydrolysate thereof, and hydrolyzing all or a portion of the mixture according to the necessity. In addition, the coating liquid is prepared by mixing components described above at a specific ratio and under specific process conditions.

公开(公告)号：EP1197999A4

公开(公告)日：2006-04-12

申请号：EP00981780

申请日：2000-12-15

申请人： CATALYSTS & CHEM IND CO

发明人： KOMATSU MICHIO ,  NAKASHIMA AKIRA ,  EGAMI MIKI ,  MURAGUCHI RYO

IPC分类号： H01L21/314 ,  H01L21/316

CPC分类号： H01L21/316

摘要： A method of forming silica film of low dielectric constant on a semiconductor substrate comprises (a) applying a silica solution of low dielectric constant for film deposition on a semiconductor substrate; (b) heat-treating the resulting film at 50 to 350 degrees C; and (c) baking the film at 350 to 450 degrees C in an inactive gas atmosphere containing 500 to 15,000 ppm of oxygen by volume. Preferably, the heat-treating (b) is carried out at 150 to 350 degrees C for 1 to 3 minutes in the air. Preferably, the baking (c) is carried out with the semiconductor substrate held on a hot plate maintained at 350 to 450 degrees C. According to such a method, a semiconductor substrate provided with silica film of low dielectric constant has a dielectric constant of less than 3, low moisture adsorption, and high film strength, while being free of damage to the metalized wiring on the semiconductor substrate.

公开(公告)号：EP1026213A4

公开(公告)日：2004-10-20

申请号：EP99933134

申请日：1999-07-28

申请人： CATALYSTS & CHEM IND CO

发明人： NAKASHIMA AKIRA ,  KOMATSU MICHIO

IPC分类号： C09D5/25 ,  C09D183/04 ,  H01L21/3105 ,  H01L21/312 ,  H05K3/46

CPC分类号： H01L21/3122 ,  C09D183/04 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31058 ,  Y10S525/903 ,  Y10T428/31663 ,  C08L2666/14 ,  C08L2666/54 ,  C08L2666/04

摘要： A coating fluid capable of forming a silica-based coating film having a relative permittivity as low as 3 or below and a low density and excellent in resistance to oxygen plasma and suitability for other processings; and a substrate having a coating film having such properties. The coating fluid is characterized by comprising a polymer composition comprising (i) a polysiloxane which is a product of the reaction of fine silica particles with a hydrolyzate of at least one alkoxysilane represented by following general formula (I) and (ii) a readily decomposable resin; XnSi(OR)4-n (wherein X represents hydrogen, flourine, C1-8 alkyl, flouroalkyl, aryl, or vinyl; R represents hydrogen, C1-8 alkyl, aryl, or vinyl; and n is an integer of 0 to 3).