MAGNETIC DETECTION DEVICE AND ELECTRIC PRODUCT

    公开(公告)号:EP2159587A4

    公开(公告)日:2017-11-15

    申请号:EP08765348

    申请日:2008-06-09

    IPC分类号: G01R33/09

    CPC分类号: G01R33/093 B82Y25/00

    摘要: A magnetic detection device is capable of switching among plural output modes, and is installed in an electrical product. An integrated circuit 22 is provided with two output terminals 40, 41 and a mode switch circuit 50 including a pair of switch terminals 58, 59. The mode switch circuit 50 is allowed to switch the output mode between the 1-output mode for outputting the (+) magnetic field detection signal and the (-) magnetic field detection signal from the output terminal 40, and the 2-output mode for outputting the (+) magnetic field signal from the output terminal 40 as one of the output terminals, and the (-) magnetic field detection signal from the output terminal 41 as the other output terminal in accordance with the shortcircuit state or the non-shortcircuit state between the switch terminals 58 and 59. The switch terminals 58, 59 are exposed on the surface of the device, and the shortcircuit state and the non-shortcircuit state may be externally adjusted.

    APPARATUS AND METHOD FOR SEQUENTIALLY RESETTING ELEMENTS OF A MAGNETIC SENSOR ARRAY
    14.
    发明公开
    APPARATUS AND METHOD FOR SEQUENTIALLY RESETTING ELEMENTS OF A MAGNETIC SENSOR ARRAY 审中-公开
    VORRICHTUNG UND VERFAHREN ZUM SEQUENTIELLENZURÜCKSETZENVON ELEMENTEN EINES MAGNETSENSORARRAYS

    公开(公告)号:EP2678703A4

    公开(公告)日:2017-09-20

    申请号:EP12750118

    申请日:2012-02-21

    IPC分类号: G01R33/02

    摘要: A semiconductor process and apparatus provide a high-performance magnetic field sensor with three differential sensor configurations which require only two distinct pinning axes, where each differential sensor is formed from a Wheatstone bridge structure with four unshielded magnetic tunnel junction sensor arrays, each of which includes a magnetic field pulse generator for selectively applying a field pulse to stabilize or restore the easy axis magnetization of the sense layers to orient the magnetization in the correct configuration prior to measurements of small magnetic fields. The field pulse is sequentially applied to groups of the sense layers of the Wheatstone bridge structures, thereby allowing for a higher current pulse or larger sensor array size for maximal signal to noise ratio.

    摘要翻译: 半导体工艺和装置提供具有三种差分传感器配置的高性能磁场传感器,其仅需要两个不同的钉扎轴,其中每个差分传感器由具有四个未屏蔽磁性隧道结传感器阵列的惠斯通电桥结构形成,每个传感器阵列包括 磁场脉冲发生器,用于选择性地施加场脉冲以稳定或恢复感测层的易磁化轴磁化,以在测量小磁场之前将磁化定向为正确配置。 场脉冲被顺序施加到惠斯登电桥结构的感测层组,从而允许更高的电流脉冲或更大的传感器阵列尺寸以获得最大的信噪比。

    PUSH-PULL BRIDGE-TYPE MAGNETIC SENSOR FOR HIGH-INTENSITY MAGNETIC FIELDS
    16.
    发明公开
    PUSH-PULL BRIDGE-TYPE MAGNETIC SENSOR FOR HIGH-INTENSITY MAGNETIC FIELDS 审中-公开
    磁性传感器MIT PUSH-PULL-BRÜCKEFÜRSEHR STARKE MAGNETFELDER

    公开(公告)号:EP3062119A4

    公开(公告)日:2017-06-21

    申请号:EP14855005

    申请日:2014-10-13

    发明人: DEAK JAMES GEZA

    IPC分类号: G01R33/09

    摘要: The present invention provides a push-pull bridge-type magnetic sensor for high-intensity magnetic fields. The sensor comprises two substrates (20, 21), magnetoresistive sensing elements (22, 42), push arm attenuators (23), and pull arm attenuators (41). Magnetization directions (100) of pinning layers of the magnetoresistive sensing elements (22, 42) located on a same substrate (20, 21) are parallel, and magnetization directions (101) of pinning layers of the magnetoresistive sensing elements (22, 42) on different substrates (20, 21) are anti-parallel, wherein the magnetoresistive sensing elements (22) on one substrate (20) are electrically connected to one another to form push arms of a push-pull bridge, and the magnetoresistive sensing elements (42) on the other substrate (21) are electrically connected to one another to form pull arms of the push-pull bridge. The magnetoresistive sensing elements (22, 42) in the push arms and the pull arms are arranged in columns above or below the push arm attenuators (23) and the pull arm attenuators (41). The sensor can be implemented in quasi-bridge, half-bridge, or full-bridge structures, and it has the following advantages: low power consumption, small offset, good linearity, wide operation range, the capability to operate in high-intensity magnetic fields, and twice the maximum sensitivity of a single-chip referenced bridge magnetic sensor.

    摘要翻译: 本发明提供了一种用于高强度磁场的推拉桥式磁传感器。 传感器包括两个基板(20,21),磁阻传感元件(22,42),推臂衰减器(23)和拉臂衰减器(41)。 位于同一衬底(20,21)上的磁阻传感元件(22,42)的钉扎层的磁化方向(100)是平行的,并且磁阻传感元件(22,42)的钉扎层的磁化方向(101) 在不同的基板(20,21)上是反平行的,其中一个基板(20)上的磁阻传感元件(22)彼此电连接以形成推挽桥的推臂,并且所述磁阻传感元件 在另一个基板(21)上彼此电连接以形成推挽桥的拉臂。 推臂和拉臂中的磁阻传感元件(22,42)在推臂衰减器(23)和拉臂衰减器(41)的上方或下方排列成列。 该传感器可以采用准桥式,半桥式或全桥式结构,具有低功耗,小偏移,线性度好,工作范围宽,能够在高强度磁场下工作的优点 场,是单芯片参考桥式磁传感器的最大灵敏度的两倍。

    MAGNETIC SENSOR, METHOD FOR MANUFACTURING MAGNETIC SENSOR, AND CURRENT SENSOR
    18.
    发明公开
    MAGNETIC SENSOR, METHOD FOR MANUFACTURING MAGNETIC SENSOR, AND CURRENT SENSOR 审中-公开
    MAGNETSENSOR,VERFAHREN ZUR HERSTELLUNG EINES MAGNETSENSORS UND STROMSENSOR

    公开(公告)号:EP3125319A1

    公开(公告)日:2017-02-01

    申请号:EP15768683.3

    申请日:2015-03-11

    摘要: A magnetic sensor (1) is provided which includes: a magnetoresistive effect element (11) in which a fixed magnetic layer (21) and a free magnetic layer (23) are laminated to each other with a nonmagnetic material layer (23) provided therebetween; at a side of the free magnetic layer opposite to the side thereof facing the nonmagnetic material layer, an antiferromagnetic layer (24) which generates an exchange coupling bias with the free magnetic layer and which aligns the magnetization direction of the free magnetic layer in a predetermined direction in a magnetization changeable state; and at a side of the antiferromagnetic layer opposite to the side thereof facing the free magnetic layer, a ferromagnetic layer (25) which generates an exchange coupling bias with the antiferromagnetic layer and which aligns the magnetization direction thereof in a predetermined direction in a magnetization changeable state. The magnetization direction based on the exchange coupling bias generated in the free magnetic layer is the same direction as the magnetization direction based on the exchange coupling bias generated in the ferromagnetic layer, and the ferromagnetic layer is able to impart a reflux magnetic field having a component in a direction along a sensitivity axis (D2) to the free magnetic layer.

    摘要翻译: 提供了一种磁传感器(1),其包括:磁阻效应元件(11),其中固定磁性层(21)和自由磁性层(23)彼此层叠,其间设置有非磁性材料层(23) ; 在与其面向非磁性材料层的一侧相反的自由磁性层的一侧,反铁磁层(24),其产生与自由磁性层的交换耦合偏置,并将自由磁性层的磁化方向对准预定的 方向在磁化可变状态; 并且在反铁磁层的与其面向自由磁性层的一侧相反的一侧,形成铁磁层(25),其与反铁磁层产生交换耦合偏置,并且使其磁化方向在磁化可变化的方向上沿预定方向 州。 基于在自由磁层中产生的交换耦合偏置的磁化方向与基于在铁磁层中产生的交换耦合偏置的磁化方向相同的方向,并且铁磁层能够赋予具有组分 沿着与自由磁性层的灵敏度轴(D2)的方向。

    MAGNETIC SENSOR
    19.
    发明公开
    MAGNETIC SENSOR 有权
    MAGNETISCHER传感器

    公开(公告)号:EP3098616A1

    公开(公告)日:2016-11-30

    申请号:EP16170663.5

    申请日:2016-05-20

    IPC分类号: G01R33/09

    摘要: A magnetic sensor includes: a first magnetic detection element group G11 and a second magnetic detection element group G12 each of which including a plurality of self-pinned magnetoresistive effect elements; and a first control unit and a second control unit configured to respectively process detection signals detected from a magnetic field by the magnetoresistive effect elements M of the first magnetic detection element group G11 and the second magnetic detection element group G12, in which pinned magnetization directions (D1, D2, D3, and D4) of at least two magnetoresistive effect elements M in the first magnetic detection element group G11 and the second magnetic detection element group G12 are different from each other, and the plurality of magnetoresistive effect elements M of the first magnetic detection element group G11 and the plurality of magnetoresistive effect elements M of the second magnetic detection element group G12 are arranged so that the magnetization directions (D1, D2, D3, and D4) thereof are symmetrical.

    摘要翻译: 磁传感器包括:第一磁检测元件组G11和第二磁检测元件组G12,每个包括多个自固位磁阻效应元件; 以及第一控制单元和第二控制单元,被配置为分别处理由第一磁性检测元件组G11和第二磁性检测元件组G12的磁阻效应元件M从磁场检测的检测信号,其中固定磁化方向 第一磁检测元件组G11和第二磁检测元件组G12中的至少两个磁阻效应元件M的D1,D2,D3和D4彼此不同,并且第一磁阻效应元件M的多个磁阻效应元件M 磁性检测元件组G11和第二磁性检测元件组G12的多个磁阻效应元件M被布置成使得其磁化方向(D1,D2,D3和D4)对称。