摘要:
A mini lead screw pump (2) monitors the rotation of a lead screw (22) by using a magnetoresistive sensor (28) and an MCU (50), and uses feedback to control the rotation direction and speed of the lead screw (22) through a motor controller (48) so as to control the speed of infusion to a patient. Furthermore, this mini lead screw pump (2) can control the infusion speed of insulin according to the patient's blood sugar concentration monitored by CGM (45). This mini lead screw pump (2) has several advantages, comprising high sensitivity, high reliability, low power consumption, low cost, and ease of use.
摘要:
A magnetic detection device is capable of switching among plural output modes, and is installed in an electrical product. An integrated circuit 22 is provided with two output terminals 40, 41 and a mode switch circuit 50 including a pair of switch terminals 58, 59. The mode switch circuit 50 is allowed to switch the output mode between the 1-output mode for outputting the (+) magnetic field detection signal and the (-) magnetic field detection signal from the output terminal 40, and the 2-output mode for outputting the (+) magnetic field signal from the output terminal 40 as one of the output terminals, and the (-) magnetic field detection signal from the output terminal 41 as the other output terminal in accordance with the shortcircuit state or the non-shortcircuit state between the switch terminals 58 and 59. The switch terminals 58, 59 are exposed on the surface of the device, and the shortcircuit state and the non-shortcircuit state may be externally adjusted.
摘要:
A semiconductor process and apparatus provide a high-performance magnetic field sensor with three differential sensor configurations which require only two distinct pinning axes, where each differential sensor is formed from a Wheatstone bridge structure with four unshielded magnetic tunnel junction sensor arrays, each of which includes a magnetic field pulse generator for selectively applying a field pulse to stabilize or restore the easy axis magnetization of the sense layers to orient the magnetization in the correct configuration prior to measurements of small magnetic fields. The field pulse is sequentially applied to groups of the sense layers of the Wheatstone bridge structures, thereby allowing for a higher current pulse or larger sensor array size for maximal signal to noise ratio.
摘要:
The present invention provides a push-pull bridge-type magnetic sensor for high-intensity magnetic fields. The sensor comprises two substrates (20, 21), magnetoresistive sensing elements (22, 42), push arm attenuators (23), and pull arm attenuators (41). Magnetization directions (100) of pinning layers of the magnetoresistive sensing elements (22, 42) located on a same substrate (20, 21) are parallel, and magnetization directions (101) of pinning layers of the magnetoresistive sensing elements (22, 42) on different substrates (20, 21) are anti-parallel, wherein the magnetoresistive sensing elements (22) on one substrate (20) are electrically connected to one another to form push arms of a push-pull bridge, and the magnetoresistive sensing elements (42) on the other substrate (21) are electrically connected to one another to form pull arms of the push-pull bridge. The magnetoresistive sensing elements (22, 42) in the push arms and the pull arms are arranged in columns above or below the push arm attenuators (23) and the pull arm attenuators (41). The sensor can be implemented in quasi-bridge, half-bridge, or full-bridge structures, and it has the following advantages: low power consumption, small offset, good linearity, wide operation range, the capability to operate in high-intensity magnetic fields, and twice the maximum sensitivity of a single-chip referenced bridge magnetic sensor.
摘要:
A magnetic sensor (1) is provided which includes: a magnetoresistive effect element (11) in which a fixed magnetic layer (21) and a free magnetic layer (23) are laminated to each other with a nonmagnetic material layer (23) provided therebetween; at a side of the free magnetic layer opposite to the side thereof facing the nonmagnetic material layer, an antiferromagnetic layer (24) which generates an exchange coupling bias with the free magnetic layer and which aligns the magnetization direction of the free magnetic layer in a predetermined direction in a magnetization changeable state; and at a side of the antiferromagnetic layer opposite to the side thereof facing the free magnetic layer, a ferromagnetic layer (25) which generates an exchange coupling bias with the antiferromagnetic layer and which aligns the magnetization direction thereof in a predetermined direction in a magnetization changeable state. The magnetization direction based on the exchange coupling bias generated in the free magnetic layer is the same direction as the magnetization direction based on the exchange coupling bias generated in the ferromagnetic layer, and the ferromagnetic layer is able to impart a reflux magnetic field having a component in a direction along a sensitivity axis (D2) to the free magnetic layer.
摘要:
A magnetic sensor includes: a first magnetic detection element group G11 and a second magnetic detection element group G12 each of which including a plurality of self-pinned magnetoresistive effect elements; and a first control unit and a second control unit configured to respectively process detection signals detected from a magnetic field by the magnetoresistive effect elements M of the first magnetic detection element group G11 and the second magnetic detection element group G12, in which pinned magnetization directions (D1, D2, D3, and D4) of at least two magnetoresistive effect elements M in the first magnetic detection element group G11 and the second magnetic detection element group G12 are different from each other, and the plurality of magnetoresistive effect elements M of the first magnetic detection element group G11 and the plurality of magnetoresistive effect elements M of the second magnetic detection element group G12 are arranged so that the magnetization directions (D1, D2, D3, and D4) thereof are symmetrical.