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公开(公告)号：EP2800129A1
公开(公告)日：2014-11-05
申请号：EP12862148.9
申请日：2012-12-26
CPC分类号： H01L24/05 , B23K35/0261 , B23K35/0272 , B23K35/22 , B23K35/264 , B23K35/302 , H01L23/488 , H01L23/492 , H01L23/49513 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/04026 , H01L2224/04042 , H01L2224/05611 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/2712 , H01L2224/27334 , H01L2224/29083 , H01L2224/29111 , H01L2224/29139 , H01L2224/29147 , H01L2224/32245 , H01L2224/32503 , H01L2224/32507 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83065 , H01L2224/83101 , H01L2224/83192 , H01L2224/83201 , H01L2224/83411 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83455 , H01L2224/8381 , H01L2224/83986 , H01L2924/00014 , H01L2924/01322 , H01L2924/01327 , H01L2924/12042 , H01L2924/203 , H01L2924/3025 , H01L2924/351 , H01L2924/3512 , H01L2924/35121 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2924/01083 , H01L2224/8321 , H01L2924/0002
摘要： A mounted structure includes an electrode of a substrate, an electrode of a semiconductor element, and a mounted layers for bonding the electrode of the substrate and the electrode of the semiconductor element, and the mounted layers includes: a first intermetallic compound layer containing a CuSn-based intermetallic compound; a Bi layer; a second intermetallic compound layer containing a CuSn-based intermetallic compound; a Cu layer; and a third intermetallic compound layer containing a CuSn-based intermetallic compound, and the above layers are sequentially arranged from the electrode of the substrate toward the electrode of the semiconductor element to configure the mounted layers.
摘要翻译： 安装结构包括基板的电极，半导体元件的电极和用于接合基板的电极和半导体元件的电极的安装层，并且安装的层包括：含有CuSn的第一金属间化合物层 基金属间化合物; 铋层 包含CuSn基金属间化合物的第二金属间化合物层; 铜层; 以及含有CuSn系金属间化合物的第三金属间化合物层，并且从基板的电极朝向半导体元件的电极依次配置上述层，以构成安装层。
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12.发明公开
公开(公告)号：EP2761650A2
公开(公告)日：2014-08-06
申请号：EP12774969.5
申请日：2012-09-20
申请人： Robert Bosch GmbH
IPC分类号： H01L23/367 , H01L23/373 , H01L23/488 , H01L21/60
CPC分类号： H01L24/29 , B23K35/0238 , B23K35/30 , H01L21/6836 , H01L23/3735 , H01L23/49513 , H01L24/27 , H01L24/83 , H01L2221/68354 , H01L2224/27003 , H01L2224/271 , H01L2224/2712 , H01L2224/2731 , H01L2224/27318 , H01L2224/2732 , H01L2224/27436 , H01L2224/27505 , H01L2224/27848 , H01L2224/2908 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29164 , H01L2224/29169 , H01L2224/2918 , H01L2224/29224 , H01L2224/29387 , H01L2224/83101 , H01L2224/83192 , H01L2224/832 , H01L2224/83201 , H01L2224/83203 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83464 , H01L2224/83469 , H01L2224/8384 , H01L2924/01029 , H01L2924/15747 , H01L2924/15787 , H01L2924/351 , H01L2924/01023 , H01L2924/01015 , H01L2924/01042 , H01L2924/04642 , H01L2924/0461 , H01L2924/00 , H01L2924/3512
摘要： The present invention relates to a layer composite (10), more particularly for connecting electronic components (11, 12) comprising at least one compensation layer (40), at least two linking layers (30) and at least two connection layers (20), wherein the compensation layer (40) is formed from aluminium or molybdenum, an aluminium or molybdenum alloy, from a metal-matrix material composed of aluminium and silicon carbide or composed of aluminium and copper-carbon, or from a copper-molybdenum alloy, wherein a linking layer (30) composed of silver is in each case applied on at least two opposite sides of the compensation layer (40), and wherein a connection layer (20) is in each case applied on the linking layers (30), wherein the connection layers (20) are formed from sinterable and/or sintered metal powder. The invention furthermore relates to a method for forming a layer composite (10) according to the invention, and to a circuit arrangement (100) containing a layer composite (10) according to the invention.
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