公开(公告)号：EP2390903B1

公开(公告)日：2016-11-02

申请号：EP10733350.2

申请日：2010-01-20

申请人： Nichia Corporation

发明人： KURAMOTO, Masafumi ,  OGAWA, Satoru ,  NIWA, Miki

IPC分类号： H01L21/58 ,  H01L21/60 ,  H01L33/40 ,  H01L33/48 ,  H01L33/62 ,  H01S5/022

CPC分类号： H01L33/44 ,  H01L23/08 ,  H01L23/293 ,  H01L23/49579 ,  H01L23/49582 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/2712 ,  H01L2224/2745 ,  H01L2224/275 ,  H01L2224/29023 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73265 ,  H01L2224/83048 ,  H01L2224/83055 ,  H01L2224/83075 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83207 ,  H01L2224/83439 ,  H01L2224/83487 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/83894 ,  H01L2224/83895 ,  H01L2224/83896 ,  H01L2224/83907 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0541 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/201 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/3025 ,  H01L2933/0066 ,  H01S5/0226 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2224/05599

公开(公告)号：EP2390903A4

公开(公告)日：2012-10-17

申请号：EP10733350

申请日：2010-01-20

申请人： NICHIA CORP

发明人： KURAMOTO MASAFUMI ,  OGAWA SATORU ,  NIWA MIKI

IPC分类号： H01L21/58 ,  H01L21/60 ,  H01L33/40 ,  H01L33/48 ,  H01L33/62 ,  H01S5/022

CPC分类号： H01L33/44 ,  H01L23/08 ,  H01L23/293 ,  H01L23/49579 ,  H01L23/49582 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/2712 ,  H01L2224/2745 ,  H01L2224/275 ,  H01L2224/29023 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73265 ,  H01L2224/83048 ,  H01L2224/83055 ,  H01L2224/83075 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83207 ,  H01L2224/83439 ,  H01L2224/83487 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/83894 ,  H01L2224/83895 ,  H01L2224/83896 ,  H01L2224/83907 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0541 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/201 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/3025 ,  H01L2933/0066 ,  H01S5/0226 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2224/05599

公开(公告)号：EP2390903A1

公开(公告)日：2011-11-30

申请号：EP10733350.2

申请日：2010-01-20

申请人： Nichia Corporation

发明人： KURAMOTO, Masafumi ,  OGAWA, Satoru ,  NIWA, Miki

IPC分类号： H01L21/52 ,  H01L33/62

CPC分类号： H01L33/44 ,  H01L23/08 ,  H01L23/293 ,  H01L23/49579 ,  H01L23/49582 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/2712 ,  H01L2224/2745 ,  H01L2224/275 ,  H01L2224/29023 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73265 ,  H01L2224/83048 ,  H01L2224/83055 ,  H01L2224/83075 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83207 ,  H01L2224/83439 ,  H01L2224/83487 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/83894 ,  H01L2224/83895 ,  H01L2224/83896 ,  H01L2224/83907 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0541 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/201 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/3025 ,  H01L2933/0066 ,  H01S5/0226 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2224/05599

摘要： An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, temporarily bonding the semiconductor element and the base by applying a pressure or an ultrasonic vibration to the semiconductor element or the base, and permanently bonding the semiconductor element and the base by applying heat having a temperature of 150 to 900°C to the semiconductor device and the base.

摘要翻译： 本发明的一个目的是提供一种用于生产具有低电阻的导电性构件的方法，所述导电构件是用一种低成本的稳定的导电材料组合物并不含有获得，在粘接剂。 一种用于制造在其中的银或提供提供了一种半导体元件的一个表面上接合基座和银或氧化银的表面上的氧化银的半导体装置，方法包括：在基本搜索做银排列的半导体元件的步骤 或设置在半导体元件的表面上的氧化银与银或氧化银接触的方式设置的基体的表面上，所述半导体元件和通过施加压力或超声波振动将半导体元件或基极的基极临时粘结 和永久地结合所述半导体元件和通过施加具有温度150〜900℃的半导体装置和基底热基底。

公开(公告)号：EP3163602A3

公开(公告)日：2017-08-09

申请号：EP16002297.6

申请日：2010-01-20

申请人： Nichia Corporation

发明人： Kuramoto, Masafumi ,  Ogawa, Satoru ,  Niwa, Miki

IPC分类号： H01L21/58 ,  H01L21/60 ,  H01L33/40 ,  H01L33/48 ,  H01L33/62 ,  H01S5/022

CPC分类号： H01L33/44 ,  H01L23/08 ,  H01L23/293 ,  H01L23/49579 ,  H01L23/49582 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/2712 ,  H01L2224/2745 ,  H01L2224/275 ,  H01L2224/29023 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73265 ,  H01L2224/83048 ,  H01L2224/83055 ,  H01L2224/83075 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83207 ,  H01L2224/83439 ,  H01L2224/83487 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/83894 ,  H01L2224/83895 ,  H01L2224/83896 ,  H01L2224/83907 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0541 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/201 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/3025 ,  H01L2933/0066 ,  H01S5/0226 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2224/05599

摘要： An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. Disclosed is a method for producing a semiconductor device in which silver (520, 620, 720) formed by silver sputtering, silver vapour deposition or silver plating and provided on a surface of a base (500, 600, 700) and silver (140, 240, 340) formed by silver sputtering, silver vapour deposition or silver plating and provided on a surface of a semiconductor element (100, 200, 300) are bonded, the method comprising the steps of arranging the semiconductor element (100, 200, 300) on the base (500, 600, 700) such that said silver (140, 240, 340) provided on a surface of the semiconductor element (100, 200, 300) is in contact with said silver (520, 620, 720) provided on a surface of the base (500, 600, 700), temporarily bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying a pressure or an ultrasonic vibration to the semiconductor element (100, 200, 300) or the base (500, 600, 700), and permanently bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying heat having a temperature of 150 to 900°C to the semiconductor element (100, 200, 300) and the base (500, 600, 700) in air or in an oxygen environment. The step of temporarily bonding and the step of permanently bonding may be performed simultaneously. The semiconductor element (100, 200, 300) and the base (500, 600, 700) may be heated in advance at 150 to 900°C before the step of temporarily bonding. A pressure of 5 to 50 MPa may be applied before the step of temporarily bonding. The semiconductor element (100, 200, 300) may be a light emitting semiconductor element.

摘要翻译： 本发明的目的是提供一种制造具有低电阻的导电构件的方法，并且使用不含粘合剂的低成本稳定导电材料组合物获得导电构件。 本发明公开了一种用于制造半导体器件的方法，其中通过银溅射，银气相沉积或镀银形成并设置在基底（500,600,700）和银（140,160）的表面上的银（520,620,720） （100,200,300）的表面上通过银溅射，银气相沉积或镀银形成的半导体元件（100,200,300）的方法包括以下步骤：将半导体元件（100,200,300） ）设置在所述基座（500,600,700）上，使得设置在所述半导体元件（100,200,300）的表面上的所述银（140,240,340）与所述银（520,620,720）接触， 设置在所述基座（500,600,700）的表面上，通过对所述半导体元件（500,600,700）施加压力或超声波振动来暂时接合所述半导体元件（100,200,300）和所述基座（500,600,700） （100,200,300）或所述基座（500,600,700）之间，并且永久地将所述半导体元件（100,200,300）和所述半导体元件 通过在空气中或在氧气环境中向半导体元件（100,200,300）和基座（500,600,700）施加具有150至900℃的温度的热量，从而在基座（500,600,700）上形成基座（500,600,700）。 暂时键合的步骤和永久键合的步骤可以同时进行。 在临时键合步骤之前，半导体元件（100,200,300）和基座（500,600,700）可预先在150至900℃加热。 临时粘合步骤之前可施加5至50MPa的压力。 半导体元件（100,200,300）可以是发光半导体元件。

公开(公告)号：EP3151268A3

公开(公告)日：2017-08-09

申请号：EP16002295.0

申请日：2010-01-20

申请人： Nichia Corporation

发明人： Kuramoto, Masafumi ,  Ogawa, Satoru ,  Niwa, Miki

IPC分类号： H01L21/58 ,  H01L21/60 ,  H01L33/40 ,  H01L33/48 ,  H01L33/62 ,  H01S5/022

CPC分类号： H01L33/44 ,  H01L23/08 ,  H01L23/293 ,  H01L23/49579 ,  H01L23/49582 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/2712 ,  H01L2224/2745 ,  H01L2224/275 ,  H01L2224/29023 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73265 ,  H01L2224/83048 ,  H01L2224/83055 ,  H01L2224/83075 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83207 ,  H01L2224/83439 ,  H01L2224/83487 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/83894 ,  H01L2224/83895 ,  H01L2224/83896 ,  H01L2224/83907 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0541 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/201 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/3025 ,  H01L2933/0066 ,  H01S5/0226 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2224/05599

摘要： An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. Disclosed is a method for producing a semiconductor device in which silver or silver oxide (520, 620, 720) provided on a surface of a base (500, 600, 700) and silver oxide (140, 240, 340) provided on a surface of a semiconductor element (100, 200, 300) are bonded, the method including the steps of arranging a semiconductor element (100, 200, 300) on a base (500, 600, 700) such that silver oxide (140, 240, 340) provided on a surface of the semiconductor element (100, 200, 300) is in contact with silver or silver oxide (520, 620, 720) provided on a surface of the base (500, 600, 700), temporarily bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying a pressure or an ultrasonic vibration to the semiconductor element (100, 200, 300) or the base (500, 600, 700), and permanently bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying heat having a temperature of 150 to 900°C to the semiconductor element (100, 200, 300) and the base (500, 600, 700). The step of temporarily bonding and the step of permanently bonding may be performed simultaneously. The step of permanently bonding may be performed in air or in an oxygen environment, or in a nitrogen environment. The semiconductor element (100, 200, 300) and the base (500, 600, 700) may be heated in advance at 150 to 900°C before the step of temporarily bonding. A pressure of 5 to 50 MPa may be applied before the step of temporarily bonding. The semiconductor element (100, 200, 300) may be a light emitting semiconductor element.

摘要翻译： 本发明的目的是提供一种制造具有低电阻的导电构件的方法，并且使用不含粘合剂的低成本稳定导电材料组合物获得导电构件。 公开了一种用于制造半导体器件的方法，其中在基体（500,600,700）的表面上提供的银或氧化银（520,620,720）和在表面上提供的氧化银（140,240,340） 的半导体元件（100,200,300）接合，所述方法包括以下步骤：在基座（500,600,700）上布置半导体元件（100,200,300），使得氧化银（140,240,340） 设置在半导体元件（100,200,300）的表面上的银或氧化银（520,620,720）与设置在基部（500,600,700）的表面上的银或氧化银（520,620,720）接触， 通过对所述半导体元件（100,200,300）或所述基座（500,600,700）施加压力或超声波振动来对所述半导体元件（100,200,300）和所述基座（500,600,700）进行加热，以及 通过向半导体元件（100,200,300）施加温度为150至900℃的热量来永久地结合半导体元件（100,200,300）和基座（500,600,700） 和底座（500,600,700）。 暂时键合的步骤和永久键合的步骤可以同时进行。 永久结合的步骤可以在空气中或氧气环境中或在氮气环境中进行。 在临时键合步骤之前，半导体元件（100,200,300）和基座（500,600,700）可预先在150至900℃加热。 临时粘合步骤之前可施加5至50MPa的压力。 半导体元件（100,200,300）可以是发光半导体元件。

公开(公告)号：EP3163601A2

公开(公告)日：2017-05-03

申请号：EP16002296

申请日：2010-01-20

申请人： NICHIA CORP

发明人： KURAMOTO MASAFUMI ,  OGAWA SATORU ,  NIWA MIKI

IPC分类号： H01L21/58 ,  H01L21/60 ,  H01L33/40 ,  H01L33/48 ,  H01L33/62 ,  H01S5/022

CPC分类号： H01L33/44 ,  H01L23/08 ,  H01L23/293 ,  H01L23/49579 ,  H01L23/49582 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/2712 ,  H01L2224/2745 ,  H01L2224/275 ,  H01L2224/29023 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73265 ,  H01L2224/83048 ,  H01L2224/83055 ,  H01L2224/83075 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83207 ,  H01L2224/83439 ,  H01L2224/83487 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/83894 ,  H01L2224/83895 ,  H01L2224/83896 ,  H01L2224/83907 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0541 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/201 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/3025 ,  H01L2933/0066 ,  H01S5/0226 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2224/05599

摘要： An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. Disclosed is a method for producing a semiconductor device in which silver oxide (520, 620, 720) provided on a surface of a base (500, 600, 700) and silver or silver oxide (140, 240, 340) provided on a surface of a semiconductor element (100, 200, 300) are bonded, the method including the steps of arranging a semiconductor element (100, 200, 300) on a base (500, 600, 700) such that silver or silver oxide (140, 240, 340) provided on a surface of the semiconductor element (100, 200, 300) is in contact with silver oxide (520, 620, 720) provided on a surface of the base (500, 600, 700), temporarily bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying a pressure or an ultrasonic vibration to the semiconductor element (100, 200, 300) or the base (500, 600, 700), and permanently bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying heat having a temperature of 150 to 900°C to the semiconductor element (100, 200, 300) and the base (500, 600, 700). The step of temporarily bonding and the step of permanently bonding may be performed simultaneously. The step of permanently bonding may be performed in air or in an oxygen environment, or in a nitrogen environment. The semiconductor element (100, 200, 300) and the base (500, 600, 700) may be heated in advance at 150 to 900°C before the step of temporarily bonding. A pressure of 5 to 50 MPa may be applied in the step of temporarily bonding. The semiconductor element (100, 200, 300) may be a light emitting semiconductor element.

摘要翻译： 本发明的一个目的是提供一种用于生产具有低电阻的导电性构件的方法，所述导电构件是用一种低成本的稳定的导电材料组合物并不含有获得，在粘接剂。 是（340 140，240）的表面上设置用于在其中氧化银（520，620，720）的半导体器件提供了一种基站（500，600，700），并且银或氧化银的表面上的方法公开 的半导体元件（100，200，300）键合的，该方法包括在基体上布置的半导体元件（100，200，300）的步骤（500，600，700）检测没有银或氧化银（140， 设置在半导体元件（100，200,300）的表面上的240，340）与设置在基座（500，600，700的表面上的氧化银（520，620，720）接触），暂时接合 半导体元件（100，200，300）和基部（500，600，700）通过施加到所述半导体元件（100，200，300）或所述基部（500，600,700）的压力或超声波振动，和 半导体元件（100，200，300）和基部（500，600，700）通过施加具有150至900℃的温度下对半导体元件的热永久地结合（100，200，300） 和所述基部（500，600，700）。 的暂时接合步骤和永久地结合的步骤可以同时进行。 永久接合的步骤可以在空气中或在氧气中进行，以环境，或在氮气环境中。 半导体元件（100，200，300）和基部（500，600，700）可以预先在150的临时粘结步骤之前被加热到900℃。 5至50MPa的压力可以以临时粘结的步骤中施加。 半导体元件（100，200，300）可以是半导体发光元件。

公开(公告)号：EP3018711A8

公开(公告)日：2016-08-10

申请号：EP15192887.6

申请日：2015-11-04

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： KADOGUCHI, Takuya

IPC分类号： H01L23/495

CPC分类号： H01L24/27 ,  H01L23/051 ,  H01L23/3107 ,  H01L23/49537 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L2224/2711 ,  H01L2224/2712 ,  H01L2224/27848 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/32507 ,  H01L2224/3303 ,  H01L2224/33181 ,  H01L2224/33505 ,  H01L2224/33517 ,  H01L2224/73215 ,  H01L2224/83455 ,  H01L2224/8381 ,  H01L2224/83815 ,  H01L2924/014 ,  H01L2924/00014

摘要： A semiconductor device (2) includes first and second semiconductor elements (3, 5) and first and second conductive members (10, 29). A first electrode (3a) on the first semiconductor element is bonded to a first stack part (12) of the first conductive member by a first bonding layer (8a). A second electrode (5b) on the second semiconductor element is bonded to a second stack part (25) of the second conductive member by a second bonding layer (8f). A first joint part (13) of the first conductive member is bonded to a second joint part (26) of the second conductive member by an intermediate bonding layer (8g). A first surface of the first joint part facing the second joint part, a side surface of the first joint part continuous from the first surface, a second surface of the second joint part facing the first joint part, and a side surface of the second joint part continuous from the second surface are covered by nickel layers (19a, 19b).

摘要翻译： 半导体器件（2）包括第一和第二半导体元件（3,5）以及第一和第二导电构件（10,29）。 第一半导体元件上的第一电极（3a）通过第一结合层（8a）结合到第一导电构件的第一堆叠部分（12）。 第二半导体元件上的第二电极（5b）通过第二结合层（8f）结合到第二导电构件的第二堆叠部分（25）。 第一导电构件的第一接合部分（13）通过中间接合层（8g）接合到第二导电构件的第二接合部分（26）。 所述第一接合部的与所述第二接合部对置的第一面，与所述第一面连续的所述第一接合部的侧面，所述第二接合部的与所述第一接合部对置的第二面及所述第二接合部的侧面 从第二表面连续的部分被镍层（19a，19b）覆盖。

公开(公告)号：EP3163602A2

公开(公告)日：2017-05-03

申请号：EP16002297

申请日：2010-01-20

申请人： NICHIA CORP

发明人： KURAMOTO MASAFUMI ,  OGAWA SATORU ,  NIWA MIKI

IPC分类号： H01L21/58 ,  H01L21/60 ,  H01L33/40 ,  H01L33/48 ,  H01L33/62 ,  H01S5/022

CPC分类号： H01L33/44 ,  H01L23/08 ,  H01L23/293 ,  H01L23/49579 ,  H01L23/49582 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/2712 ,  H01L2224/2745 ,  H01L2224/275 ,  H01L2224/29023 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73265 ,  H01L2224/83048 ,  H01L2224/83055 ,  H01L2224/83075 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83207 ,  H01L2224/83439 ,  H01L2224/83487 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/83894 ,  H01L2224/83895 ,  H01L2224/83896 ,  H01L2224/83907 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0541 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/201 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/3025 ,  H01L2933/0066 ,  H01S5/0226 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2224/05599

摘要： An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. Disclosed is a method for producing a semiconductor device in which silver (520, 620, 720) formed by silver sputtering, silver vapour deposition or silver plating and provided on a surface of a base (500, 600, 700) and silver (140, 240, 340) formed by silver sputtering, silver vapour deposition or silver plating and provided on a surface of a semiconductor element (100, 200, 300) are bonded, the method comprising the steps of arranging the semiconductor element (100, 200, 300) on the base (500, 600, 700) such that said silver (140, 240, 340) provided on a surface of the semiconductor element (100, 200, 300) is in contact with said silver (520, 620, 720) provided on a surface of the base (500, 600, 700), temporarily bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying a pressure or an ultrasonic vibration to the semiconductor element (100, 200, 300) or the base (500, 600, 700), and permanently bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying heat having a temperature of 150 to 900°C to the semiconductor element (100, 200, 300) and the base (500, 600, 700) in air or in an oxygen environment. The step of temporarily bonding and the step of permanently bonding may be performed simultaneously. The semiconductor element (100, 200, 300) and the base (500, 600, 700) may be heated in advance at 150 to 900°C before the step of temporarily bonding. A pressure of 5 to 50 MPa may be applied before the step of temporarily bonding. The semiconductor element (100, 200, 300) may be a light emitting semiconductor element.

摘要翻译： 本发明的一个目的是提供一种用于生产具有低电阻的导电性构件的方法，所述导电构件是用一种低成本的稳定的导电材料组合物并不含有获得，在粘接剂。 公开了一种用于生产，其中银以银溅射，银蒸镀或银电镀形成，并且设置在基座（500，600，700）和银的表面上的半导体器件（520，620，720）的方法（140， 240，340）所形成由银溅射，银蒸镀或电镀银并提供了一种半导体元件（100，200,300）的表面上的键合，该方法包括配置半导体元件（100，200的步骤，300 ）基体（500,600，700），检查这就是说，340设置在半导体元件（100，200,300）的表面上的银（140，240）是与所述银（520，620，720接触）上 设置在基座（500，600，700），通过施加压力或超声波振动到半导体元件暂时的半导体元件（100，200，300）和基部（500，600，700）接合（的表面上 100，200，300）或所述基部（500，600,700），和永久地接合半导体元件（100，200,300）和第 E型灯头（500，600，700）通过施加具有150〜900℃的半导体元件（100，200，300），并在空气中或在氧气环境中的基站（500,600，700）的热。 的暂时接合步骤和永久地结合的步骤可以同时进行。 半导体元件（100，200，300）和基部（500，600，700）可以预先在150的临时粘结步骤之前被加热到900℃。 5至50MPa的压力可能暂时结合步骤之前施加。 半导体元件（100，200，300）可以是半导体发光元件。

公开(公告)号：EP3018711A1

公开(公告)日：2016-05-11

申请号：EP15192887.6

申请日：2015-11-04

申请人： Toyota Jidosha Kabushiki Kaisha

发明人： KADOGUCHI, Takuya

IPC分类号： H01L23/495

CPC分类号： H01L24/27 ,  H01L23/051 ,  H01L23/3107 ,  H01L23/49537 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L2224/2711 ,  H01L2224/2712 ,  H01L2224/27848 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/32507 ,  H01L2224/3303 ,  H01L2224/33181 ,  H01L2224/33505 ,  H01L2224/33517 ,  H01L2224/73215 ,  H01L2224/83455 ,  H01L2224/8381 ,  H01L2224/83815 ,  H01L2924/014 ,  H01L2924/00014

摘要： A semiconductor device (2) includes first and second semiconductor elements (3, 5) and first and second conductive members (10, 29). A first electrode (3a) on the first semiconductor element is bonded to a first stack part (12) of the first conductive member by a first bonding layer (8a). A second electrode (5b) on the second semiconductor element is bonded to a second stack part (25) of the second conductive member by a second bonding layer (8f). A first joint part (13) of the first conductive member is bonded to a second joint part (26) of the second conductive member by an intermediate bonding layer (8g). A first surface of the first joint part facing the second joint part, a side surface of the first joint part continuous from the first surface, a second surface of the second joint part facing the first joint part, and a side surface of the second joint part continuous from the second surface are covered by nickel layers (19a, 19b).

摘要翻译： 半导体器件（2）包括第一和第二半导体元件（3,5）以及第一和第二导电元件（10,29）。 第一半导体元件上的第一电极（3a）通过第一接合层（8a）接合到第一导电部件的第一堆叠部分（12）。 第二半导体元件上的第二电极（5b）通过第二接合层（8f）接合到第二导电部件的第二堆叠部分（25）。 第一导电构件的第一接合部分（13）通过中间接合层（8g）接合到第二导电构件的第二接合部分（26）。 所述第一接合部的面向所述第二接合部的第一面，所述第一接合部的从所述第一面连续的侧面，所述第二接合部的与所述第一接合部相对的第二面和所述第二接头的侧面 从第二表面连续的部分被镍层（19a，19b）覆盖。

公开(公告)号：EP2800129A4

公开(公告)日：2015-07-08

申请号：EP12862148

申请日：2012-12-26

申请人： PANASONIC IP MAN CO LTD

发明人： NAKAMURA TAICHI ,  KITAURA HIDETOSHI

IPC分类号： H01L23/488 ,  H01L21/60

CPC分类号： H01L24/05 ,  B23K35/0261 ,  B23K35/0272 ,  B23K35/22 ,  B23K35/264 ,  B23K35/302 ,  H01L23/488 ,  H01L23/492 ,  H01L23/49513 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/2712 ,  H01L2224/27334 ,  H01L2224/29083 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/32507 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83065 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2224/83201 ,  H01L2224/83411 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/8381 ,  H01L2224/83986 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/12042 ,  H01L2924/203 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/35121 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/01083 ,  H01L2224/8321 ,  H01L2924/0002