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56 条记录 (耗时 0.053 秒)

    Capacitive type pressure sensor
    21.
    发明公开
    Capacitive type pressure sensor 有权
    卡普塔特

    公开(公告)号：EP0947816A2

    公开(公告)日：1999-10-06

    申请号：EP99105163.2

    申请日：1999-03-30

    申请人： Hitachi, Ltd. ,  Hitachi Car Engineering Co., Ltd.

    发明人： Horie, Junichi ,  Onose, Yasuo ,  Ichikawa, Norio ,  Kuryu, Seiji ,  Shimada, Satoshi ,  Saito, Akihiko ,  Hanzawa, Keiji ,  Matsumoto, Masahiro ,  Moriya, Hiroshi ,  Yasukawa, Akio ,  Miyazaki, Atsushi

    IPC分类号： G01L9/12

    CPC分类号： G01L9/0073

    摘要： By sealing a diaphragm (150) with less processes and lower cost and reducing deformation due to remaining stress, a stable and highly reliable pressure sensor construction is proposed. The pressure sensor is low in measurement error and small in floating capacitance and leakage current and good in characteristic. As a means to attain the above object, a polycrystalline silicon diaphragm (150) is sealed with a silicon oxide film (160) deposited through a LPCVD method and then completely covered. The diaphragm (150) is placed on a surface of a semiconductor substrate (110) with a nearly constant gap of 0.15 to 1.3 µm, and has difference-in-grade constructions (40) of a deformation reducing means due to remaining stress.

    摘要翻译： 通过以较少的工艺和较低的成本密封隔膜（150）并减少由于剩余应力引起的变形，提出了稳定和高度可靠的压力传感器结构。 压力传感器测量误差小，浮动电容和漏电流小，特性好。 作为实现上述目的的手段，用通过LPCVD方法沉积的氧化硅膜（160）密封多晶硅隔膜（150），然后完全覆盖。 隔膜（150）以0.15-1.3μm的几乎恒定的间隙放置在半导体衬底（110）的表面上，并且由于剩余应力而具有变形减小装置的不同级别的构造（40）。

    Capacitive pressure sensor
    28.
    发明公开
    Capacitive pressure sensor 失效
    卡普塔特

    公开(公告)号：EP0059488A1

    公开(公告)日：1982-09-08

    申请号：EP82103121.8

    申请日：1979-07-20

    申请人： Hitachi, Ltd.

    发明人： Kawakami, Kanji ,  Shimada, Satoshi ,  Nishihara, Motohisa

    IPC分类号： G01L9/12

    CPC分类号： G01L13/025 ,  G01L9/0042 ,  G01L9/0072 ,  G01L9/0073

    摘要： A capacitive pressure sensor includes at least one stationary substrate (300a, 300b) and a diaphragm (250) having a portion movable with respect to the substrate, a pressure chamber (205a, 205b) being defined between the diaphragm and the at least one substrate and filled with a fluid exposed to the pressure to be detected. The diaphragm (250) is formed of silicon as an electrically conductive material, thus serving as one electrode of the capacitive sensor.
    The substrate or substrates are formed of silicon, thus themselves forming the opposite electrode or electrodes of the capacitive sensor. Spacers of insulating material such as borosilicate glass, quartz, soft glass or sapphire, are bonded between the diaphragm and the substrate or substrates by an anodic bonding process.

    摘要翻译： 电容式压力传感器包括至少一个固定基板（300a，300b）和具有可相对于基板移动的部分的隔膜（250），压力室（205a，205b）限定在隔膜和至少一个基板 并充满暴露于待检测压力的流体。 隔膜（250）由硅作为导电材料形成，因此用作电容式传感器的一个电极。 衬底或衬底由硅形成，因此本身形成电容传感器的相对电极或电极。 绝缘材料如硼硅酸盐玻璃，石英，软玻璃或蓝宝石的隔板通过阳极接合工艺结合在隔膜与基板或基板之间。