Semiconductor strain gauge
    3.
    发明公开
    Semiconductor strain gauge 失效
    Halbleiter-Dehnungsmesser。

    公开(公告)号:EP0034807A1

    公开(公告)日:1981-09-02

    申请号:EP81101182.4

    申请日:1981-02-19

    申请人: Hitachi, Ltd.

    IPC分类号: G01L1/18 G01L9/06 H01L29/84

    CPC分类号: G01L9/0054 G01L9/065

    摘要: The invention relates to a semiconductor strain gauge comprising four piezoresistive elements (10,12,14,16) which include a low impurity concentration diffused portion and a heavily-doped diffused portion.
    The resistance values of the two low impurity concentration diffused portions opposite to one another are greater than the resistance values of the other two low impurity concentration portions. The resistances of the heavily-doped diffused portions are so selected that the resistances of the piezoresistive elements (10,12,14,16) are equal.

    摘要翻译: 本发明涉及包括四个压阻元件(10,12,14,16)的半导体应变计,其包括低杂质浓度扩散部分和重掺杂扩散部分。 ...彼此相反的两个低杂质浓度扩散部分的电阻值大于其它两个低杂质浓度部分的电阻值。 选择重掺杂扩散部分的电阻使得压阻元件(10,12,14,16)的电阻相等。

    Image sensor
    6.
    发明公开
    Image sensor 失效
    图像传感器

    公开(公告)号:EP0154962A2

    公开(公告)日:1985-09-18

    申请号:EP85102744.1

    申请日:1985-03-11

    申请人: HITACHI, LTD.

    IPC分类号: H01L31/02 H04N1/028 H01L27/14

    摘要: An image sensor comprises a transparent substrate (56; 57; 80; 81), an optical lens (58; 70; 98; 96) formed integrally in one major surface of the transparent substrate, and a photosensor (50; 90) provided on the side of the other major surface of the transparent substrate and having output electrodes, wherein light incident on the optical lens is focused by the lens onto the photosensor through the transparent substrate.

    摘要翻译: 本发明公开了一种图像传感器,其包括透明基板(56; 57; 80; 81),整体形成在透明基板的一个主表面中的光学透镜(58; 70; 98; 96) 透明基板的另一主表面的一侧并具有输出电极,其中入射到光学透镜上的光通过透镜聚焦到透过基板的光传感器上。