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公开(公告)号:EP0132822B1
公开(公告)日:1989-03-01
申请号:EP84108673.9
申请日:1984-07-23
申请人: HITACHI, LTD.
IPC分类号: H03K19/094
CPC分类号: H03K19/09448 , H03K19/017
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公开(公告)号:EP0086462B1
公开(公告)日:1987-09-02
申请号:EP83101281.0
申请日:1983-02-10
申请人: Hitachi, Ltd.
IPC分类号: G01L9/06
CPC分类号: G01L9/065
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公开(公告)号:EP0034807A1
公开(公告)日:1981-09-02
申请号:EP81101182.4
申请日:1981-02-19
申请人: Hitachi, Ltd.
CPC分类号: G01L9/0054 , G01L9/065
摘要: The invention relates to a semiconductor strain gauge comprising four piezoresistive elements (10,12,14,16) which include a low impurity concentration diffused portion and a heavily-doped diffused portion.
The resistance values of the two low impurity concentration diffused portions opposite to one another are greater than the resistance values of the other two low impurity concentration portions. The resistances of the heavily-doped diffused portions are so selected that the resistances of the piezoresistive elements (10,12,14,16) are equal.摘要翻译: 本发明涉及包括四个压阻元件(10,12,14,16)的半导体应变计,其包括低杂质浓度扩散部分和重掺杂扩散部分。 ...彼此相反的两个低杂质浓度扩散部分的电阻值大于其它两个低杂质浓度部分的电阻值。 选择重掺杂扩散部分的电阻使得压阻元件(10,12,14,16)的电阻相等。
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公开(公告)号:EP0300808A3
公开(公告)日:1990-08-01
申请号:EP88306747.2
申请日:1988-07-22
发明人: Tanaka, Akira , Shimada, Satoshi , Nakagawa, Yusaku , Yamada, Kazuji , Nishihara, Motohisa , Miyoshi, Tadahiko , Kagohara, Hiromi , Baba, Noboru , Inamura, Ichiro
IPC分类号: H01J35/10
CPC分类号: H01J35/108 , H01J2235/084
摘要: A method for generating X-rays in an X-ray tube (10), comprises the steps of rotating an X-ray target (17) of a rotating anode (16), the X-ray target having a metal coated layer (23) thereon, of applying electron beams (18) emitted from a cathode (15) onto the metal coated layer (23) of the X-ray target, and of offsetting thermal deformation of the X-ray target (17) due to the application of said electron beams by deformation of the X-ray target (17) due to centrifugal force, thereby maintaining a position of the X-ray target (17) in a direction of the application of the electron beams, at a room temperature of the X-ray target, thus generating the X-rays.
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公开(公告)号:EP0080186B1
公开(公告)日:1987-06-16
申请号:EP82110712.5
申请日:1982-11-19
申请人: Hitachi, Ltd.
CPC分类号: G01L19/148 , G01L9/0054 , G01L9/0073 , G01L13/025 , G01L19/0038 , G01L19/0061 , G01L19/0645 , H01L29/84
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公开(公告)号:EP0154962A2
公开(公告)日:1985-09-18
申请号:EP85102744.1
申请日:1985-03-11
申请人: HITACHI, LTD.
CPC分类号: H04N1/0316 , G02B6/1245 , H01L27/14623 , H01L27/14625 , H01L27/14643 , H04N1/0311 , H04N5/2253
摘要: An image sensor comprises a transparent substrate (56; 57; 80; 81), an optical lens (58; 70; 98; 96) formed integrally in one major surface of the transparent substrate, and a photosensor (50; 90) provided on the side of the other major surface of the transparent substrate and having output electrodes, wherein light incident on the optical lens is focused by the lens onto the photosensor through the transparent substrate.
摘要翻译: 本发明公开了一种图像传感器,其包括透明基板(56; 57; 80; 81),整体形成在透明基板的一个主表面中的光学透镜(58; 70; 98; 96) 透明基板的另一主表面的一侧并具有输出电极,其中入射到光学透镜上的光通过透镜聚焦到透过基板的光传感器上。
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公开(公告)号:EP0007596B1
公开(公告)日:1984-02-22
申请号:EP79102576.0
申请日:1979-07-20
申请人: Hitachi, Ltd.
CPC分类号: G01L13/025 , G01L9/0042 , G01L9/0072 , G01L9/0073
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公开(公告)号:EP0010204B1
公开(公告)日:1983-07-13
申请号:EP79103666.8
申请日:1979-09-27
申请人: Hitachi, Ltd.
发明人: Yamada, Kazuji , Suzuki, Seiko , Nishihara, Motohisa , Kawakami, Kanji , Sato, Hideo , Kobori, Shigeyuki , Kanzawa, Ryosaku , Takahashi, Minoru , Minorikawa, Hitoshi
CPC分类号: G01L9/0042 , G01L9/0054
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公开(公告)号:EP0300808B1
公开(公告)日:1995-01-11
申请号:EP88306747.2
申请日:1988-07-22
发明人: Tanaka, Akira , Shimada, Satoshi , Nakagawa, Yusaku , Yamada, Kazuji , Nishihara, Motohisa , Miyoshi, Tadahiko , Kagohara, Hiromi , Baba, Noboru , Inamura, Ichiro
IPC分类号: H01J35/10
CPC分类号: H01J35/108 , H01J2235/084
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公开(公告)号:EP0154962B1
公开(公告)日:1991-04-17
申请号:EP85102744.1
申请日:1985-03-11
申请人: HITACHI, LTD.
CPC分类号: H04N1/0316 , G02B6/1245 , H01L27/14623 , H01L27/14625 , H01L27/14643 , H04N1/0311 , H04N5/2253
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