摘要:
A target of image pickup tube, which comprises a transparent substrate (1), a transparent conductive film (2), a p-type photoconductive film (3) made mainly from amorphous Se, an n-type conductive film capable of forming a rectifying contact at the interface with the p-type photoconductive film, using the rectifying contact as a backward bias, characterized in that the p-type photoconductive film (3) contains at least a region (b) containing over 35% to 60% by weight of Te in the film thickness direction and at least a region containing 0.005 to 5% by weight of at least a material capable of forming shallow levels in the amorphous Se in the film thickness direction, has good after-image characteristics even if operated at a high temperature (Fig. 2).
摘要:
A target of an image pickup tube is formed by laminating at least a transparent conductive film (2), an amorphous layer (4) consisting essentially of silicon containing hydrogen, and an amorphous layer (5) consisting essentially of selenium in the above order on a light-transmitting substrate (l). The selenium layer (5) prevents deterioration of the performance of the silicon layer (4) with time, while not affecting the useful properties of the silicon layer (4).
摘要:
A photoconductive film comprises a photoconductive layer (3) which is mainly made of selenium and has a region (b) in the thickness direction containing tellurium. At least one of (i) a portion in a direction of hole flow of said region (b) and (ii) a portion in the hole flow direction of another region (c) which is located adjacent to said region (b) is doped with at least one member selected from oxides, fluorides and elements which belong to groups II, III and VII, which are capable of forming negative space charge in selenium, at a concentration in a range of 10 ppm to 1% by weight on an average. Typical examples of such dopants include CuO, In 2 O 3 , Se0 2 , V 2 0 5 , MoO 3 , WOa, GaF 2 , InF 3 , Zn, Ga, In, Cl, I and Br. The "after image" characteristic ascribable to incident light of high intensity can be significantly improved.
摘要:
An image pickup tube is provided with the third electrode (6, 19) to control the potential of the region which is not scanned by an electron beam in the image pickup tube target section including a substrate (1), a target electrode (2) and a photo-conductive film (3). A method for operating this image pickup tube is also disclosed. Thus, undesired image phenomena which are generated when the image pickup tube is used with a relatively high target voltage, e.g., image distortion, shading, a waterfall phenomenon and image inversion phenomenon can be suppressed, thereby realizing a high sensitivity image pickup tube. The photo-conductive film (3) is covered by a porous thin film (4).
摘要:
A target of an image pickup tube is formed by laminating at least a transparent conductive film (2), an amorphous layer (4) consisting essentially of silicon containing hydrogen, and an amorphous layer (5) consisting essentially of selenium in the above order on a light-transmitting substrate (l). The selenium layer (5) prevents deterioration of the performance of the silicon layer (4) with time, while not affecting the useful properties of the silicon layer (4).
摘要:
The invention relates to a photo-conductive TV pick-up tube in which the capacity of the photo-conductive film (5) is 15 to 150 µF/m 2 , whereby it is possible to use a thin scanning electron beam and to markedly improve the resolution of the pick-up tube.
摘要:
The invention relates to a photo-conductive TV pick-up tube in which the capacity of the photo-conductive film (5) is 15 to 150 µF/m 2 , whereby it is possible to use a thin scanning electron beam and to markedly improve the resolution of the pick-up tube.
摘要翻译:本发明涉及一种导光电视拾取管,其中光导膜(5)的容量为15至150μF/ m 2,由此可以使用薄扫描电子束和 以显着提高拾取管的分辨率。