公开(公告)号：EP0283699B1

公开(公告)日：1994-06-15

申请号：EP88101954.1

申请日：1988-02-10

申请人： HITACHI, LTD. ,  NIPPON HOSO KYOKAI

发明人： Takasaki, Yukio ,  Tsuji, Kazutaka ,  Makishima, Tatsuo ,  Hirai, Tadaaki ,  Ishioka, Sachio ,  Kawamura, Tatsuro ,  Shidara, Keiichi ,  Hiruma, Eikyu ,  Tanioka, Kenkichi ,  Yamazaki, Junichi ,  Sameshima, Kenji ,  Matsubara, Hirokazu Sanhaitsu Musashino A-107 ,  Taketoshi, Kazuhisa

IPC分类号： H01L31/08 ,  H01L31/02 ,  H01L31/10

CPC分类号： H01L31/095 ,  H01L31/03765 ,  H01L31/107 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

公开(公告)号：EP0276683A3

公开(公告)日：1989-10-25

申请号：EP88100331.3

申请日：1988-01-12

申请人： HITACHI, LTD. ,  NIPPON HOSO KYOKAI

发明人： Ishioka, Sachio ,  Takasaki, Yukio ,  Hirai, Tadaaki ,  Tsuji, Kazutaka ,  Makishima, Tatsuo ,  Nonaka, Yasuhiko ,  Kawamura, Tatsuro ,  Yamashita, Takashi ,  Taketoshi, Kazuhisa ,  Shidara, Keiichi ,  Ando, Fumihiko ,  Tanioka, Kenkichi

IPC分类号： H01L31/08 ,  H01L31/02 ,  H01L27/14

CPC分类号： H01L31/095 ,  H01L31/0272

摘要： Disclosed is a photoelectric conversion device which comprises: a photoconductive layer (34, 44, 57, 67) made of amorphous semiconductor material which shows charge multiplication and which converts photo signals (37, 47, 50, 60) into electric signals; and a substrate (31, 41, 51, 61) having electric circuits or the like (32, 42, 56, 66) (for example switching elements) for reading the electric signals. The amorphous semiconduc­tor material used according to the invention shows the charge multiplication action under predetermined intensity of electric field so that a high sensitive photoelectric conversion device having a gain which is not smaller than 1 is realized.

摘要翻译： 本发明公开了一种光电转换装置，其包括：由非晶半导体材料制成的光电导层（34,44,57,67），其显示电荷倍增并且将光信号（37,47,50,60）转换为电信号; 和具有用于读取电信号的电路等（32,42,56,66）（例如开关元件）的基板（31,41,51,61）。 根据本发明使用的非晶半导体材料在预定的电场强度下显示电荷倍增作用，从而实现具有不小于1的增益的高灵敏度光电转换器件。

公开(公告)号：EP0458179B1

公开(公告)日：1996-09-18

申请号：EP91107859.0

申请日：1991-05-15

申请人： HITACHI, LTD. ,  NIPPON HOSO KYOKAI

发明人： Sameshima, Kenji, of Hitachi Owadaryo ,  Makishima, Tatsuo ,  Hirai, Tadaaki ,  Takasaki, Yukio ,  Kubota, Misao ,  Tanioka, Kenkichi ,  Shidara, Keiichi

IPC分类号： H01J31/38

CPC分类号： H01J31/38 ,  H01J29/45

公开(公告)号：EP0406869A1

公开(公告)日：1991-01-09

申请号：EP90112872.8

申请日：1990-07-05

申请人： HITACHI, LTD. ,  NIPPON HOSO KYOKAI

发明人： Kikawa, Takeshi, Hitachi Daiyon Kyoshinryo ,  Tsuji, Kazutaka ,  Sameshima, Kenji ,  Hirai, Tadaaki ,  Yamazaki, Junichi, Gurin Puraza Hazumi ,  Kubota, Misao ,  Shidara, Keiichi

IPC分类号： H01J29/45 ,  H01L27/14

CPC分类号： H01L31/0392 ,  H01J29/45 ,  H01L31/024 ,  H01L31/0272 ,  H01L31/09 ,  Y02E10/50

摘要： Disclosure is given for a photoconductive device comprising a trans­parent substrate (11), a transparent conductive film (12), a photoconductive film (13) and a layer (22) of an insulator provided on at least part of the substrate and of high thermal conductivity, and a method of operating the photoconductive device. Thus, especially, the temperature of a photoconductive film of an imaging device typical of an image pick-up tube or the photo­conductive device which may be a one- or two-dimensional image sensor or a photocell can be controlled precisely and efficiently.

摘要翻译： 对于包括透明基板（11），透明导电膜（12），光电导膜（13）和设置在基板的至少一部分上的绝缘体层（22）和高热 导电性，以及操作感光体的方法。 因此，特别地，可以精确且有效地控制成像装置的典型的成像装置的感光膜或可以是一维或二维图像传感器或光电池的光电导装置的温度。

公开(公告)号：EP0163468B1

公开(公告)日：1989-12-27

申请号：EP85303520.2

申请日：1985-05-20

申请人： HITACHI, LTD. ,  NIPPON HOSO KYOKAI

发明人： Tanioka, Kenkichi ,  Shidara, Keiichi ,  Kuriyama, Takao ,  Takasaki, Yukio ,  Hirai, Tadaaki ,  Nonaka, Yasuhiko ,  Inoue, Eisuke

IPC分类号： H01J29/45

CPC分类号： H01J29/456

公开(公告)号：EP0255246A3

公开(公告)日：1989-04-26

申请号：EP87305906.7

申请日：1987-07-03

申请人： HITACHI, LTD. ,  NIPPON HOSO KYOKAI

发明人： Tanioka, Kenkichi ,  Shidara, Keiichi ,  Kawamura, Tatsuro ,  Yamazaki, Junichi ,  Hiruma, Eikyuu ,  Taketoshi, Kazuhisa ,  Suzuki, Shiro ,  Yamashita, Takashi ,  Kosugi, Mitsuo ,  Ikeda, Yochizumi ,  Aiba, Masaaki Honkomagome Nichome Danchi 108 ,  Hirai, Tadaaki ,  Takasaki, Yukio ,  Ishioka, Sachio ,  Makishima, Tatsuo ,  Sameshima, Kenji Hitachi Owadaryo 48-18 ,  Uda, Tsuyoshi ,  Goto, Naohiro ,  Nonaka, Yasuhiko

IPC分类号： H01J29/45 ,  H01L31/08 ,  H01L27/14

CPC分类号： H01J29/456

摘要： A photoconductive device having a photoconduc­tive layer which includes an amorphous semiconductor layer (24) capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconduc­tive device while maintaining low lag property.

公开(公告)号：EP0283699A2

公开(公告)日：1988-09-28

申请号：EP88101954.1

申请日：1988-02-10

申请人： HITACHI, LTD. ,  NIPPON HOSO KYOKAI

发明人： Takasaki, Yukio ,  Tsuji, Kazutaka ,  Makishima, Tatsuo ,  Hirai, Tadaaki ,  Ishioka, Sachio ,  Kawamura, Tatsuro ,  Shidara, Keiichi ,  Hiruma, Eikyu ,  Tanioka, Kenkichi ,  Yamazaki, Junichi ,  Sameshima, Kenji ,  Matsubara, Hirokazu Sanhaitsu Musashino A-107 ,  Taketoshi, Kazuhisa

IPC分类号： H01L31/08 ,  H01L31/02 ,  H01L31/10

CPC分类号： H01L31/095 ,  H01L31/03765 ,  H01L31/107 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoelectric conversion device using an amorphous material composed mainly of tetrahedral elements including at least an element of hydrogen and halogens as semiconductor material is disclosed. When a strong electric field is applied to a layer formed by using this amorphous semiconductor, a charge multiplication effect is produced mainly in the interior of the amorphous semiconductor and thus it is possible to obtain a thermally stable photoelectric conversion device having a high sensitivity while keeping a good photoresponse.

摘要翻译： 公开了一种使用主要由至少包含氢和卤素元素的四面体元素作为半导体材料的非晶材料的光电转换装置。 当通过使用该非晶半导体形成的层施加强电场时，主要在非晶半导体的内部产生电荷倍增效应，因此可以获得具有高灵敏度的热稳定型光电转换装置，同时保持 良好的光响应。

公开(公告)号：EP0276683A2

公开(公告)日：1988-08-03

申请号：EP88100331.3

申请日：1988-01-12

申请人： HITACHI, LTD. ,  NIPPON HOSO KYOKAI

发明人： Ishioka, Sachio ,  Takasaki, Yukio ,  Hirai, Tadaaki ,  Tsuji, Kazutaka ,  Makishima, Tatsuo ,  Nonaka, Yasuhiko ,  Kawamura, Tatsuro ,  Yamashita, Takashi ,  Taketoshi, Kazuhisa ,  Shidara, Keiichi ,  Ando, Fumihiko ,  Tanioka, Kenkichi

IPC分类号： H01L31/08 ,  H01L31/02 ,  H01L27/14

CPC分类号： H01L31/095 ,  H01L31/0272

摘要： Disclosed is a photoelectric conversion device which comprises: a photoconductive layer (34, 44, 57, 67) made of amorphous semiconductor material which shows charge multiplication and which converts photo signals (37, 47, 50, 60) into electric signals; and a substrate (31, 41, 51, 61) having electric circuits or the like (32, 42, 56, 66) (for example switching elements) for reading the electric signals. The amorphous semiconduc­tor material used according to the invention shows the charge multiplication action under predetermined intensity of electric field so that a high sensitive photoelectric conversion device having a gain which is not smaller than 1 is realized.

摘要翻译： 公开了一种光电转换装置，其包括：由非晶半导体材料制成的光电导层（34,44,67,67），其显示电荷倍增，并将光信号（37,47,50,60）转换为电信号; 以及具有用于读取电信号的电路等（32,42,56,66）（例如开关元件）的基板（31,41,51,61）。 根据本发明使用的非晶半导体材料在预定的电场强度下显示充电倍增动作，从而实现具有不小于1的增益的高灵敏度光电转换装置。

公开(公告)号：EP0406869B1

公开(公告)日：1994-10-26

申请号：EP90112872.8

申请日：1990-07-05

申请人： HITACHI, LTD. ,  NIPPON HOSO KYOKAI

发明人： Kikawa, Takeshi, Hitachi Daiyon Kyoshinryo ,  Tsuji, Kazutaka ,  Sameshima, Kenji ,  Hirai, Tadaaki ,  Yamazaki, Junichi, Gurin Puraza Hazumi ,  Kubota, Misao ,  Shidara, Keiichi

IPC分类号： H01J29/45 ,  H01L27/14

CPC分类号： H01L31/0392 ,  H01J29/45 ,  H01L31/024 ,  H01L31/0272 ,  H01L31/09 ,  Y02E10/50

公开(公告)号：EP0248426B1

公开(公告)日：1994-09-07

申请号：EP87108095.8

申请日：1987-06-04

申请人： HITACHI, LTD. ,  NIPPON HOSO KYOKAI

发明人： Takasaki, Yukio ,  Hirai, Tadaaki ,  Maruyama, Masanori ,  Nonaka, Yasuhiko ,  Inoue, Eisuke ,  Kato, Shinichi ,  Shidara, Keiichi ,  Kurashige, Mitsuhiro ,  Tanioka, Kenkichi ,  Okazaki, Saburo ,  Yamazaki, Junichi ,  Egami, Norifumi

IPC分类号： H01J29/45 ,  H01J31/38 ,  H01J29/56

CPC分类号： H01J31/38 ,  H01J29/45