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47 条记录 (耗时 0.018 秒)

    Recording member
    23.
    发明公开
    Recording member 失效
    Aufzeichnungselement。

    公开(公告)号：EP0046412A1

    公开(公告)日：1982-02-24

    申请号：EP81303786.8

    申请日：1981-08-19

    申请人： Hitachi, Ltd.

    发明人： Terao, Motoyasu ,  Horigome, Shinkichi ,  Mitsuya, Munehisa ,  Ota, Sakae

    IPC分类号： G11B7/24 ,  B41M5/24

    CPC分类号： G11B7/243 ,  G11B2007/24314 ,  G11B2007/24316 ,  Y10S430/146 ,  Y10S430/165

    摘要： A recording member e.g. an optical video disc, comprises a substrate and a recording layer formed on the substrate. To achieve improved oxidation resistance and water resistance and stable characteristics, the recording layer contains Se and at least one of Te and Bi, the Se content in the vicinity of the outer surface of the recording layer and/or in the vicinity of the interface between the recording layer and the substrate being higher than the average selenium content in the remainder.

    摘要翻译： 记录部件 光学视频盘，包括形成在基板上的基板和记录层。 为了获得改善的抗氧化性和耐水性和稳定的特性，记录层包含Se和Te和Bi中的至少一种，Se含量在记录层的外表面附近和/或在界面附近 记录层和底物的平均硒含量高于其余部分。

    Electrophotographic plate and a process for preparation of such a plate
    24.
    发明公开
    Electrophotographic plate and a process for preparation of such a plate 失效
    Elektrophotographische Platte und Verfahren zur Herstellung einer solchen Platte。

    公开(公告)号：EP0021751A1

    公开(公告)日：1981-01-07

    申请号：EP80302002.3

    申请日：1980-06-13

    申请人： Hitachi, Ltd.

    发明人： Yamamoto, Hideaki ,  Taniguchi, Yoshio ,  Horigome, Shinkichi ,  Saito, Susumu ,  Mori, Yoshiaki ,  Maruyama, Eiichi

    IPC分类号： G03G5/04 ,  G03G5/082

    CPC分类号： G03G5/0436 ,  G03G5/0433

    摘要： An electrophotographic plate consists of a substrate (1) with a conductive surface and four successive layers (2,3,4 and 5) the third of which is optional. The first layer (2) is formed from Se and 3 to 10%by weight of As, and the second layer (3) is formed from Se, 40 to 47% by weight of Te and 3 to 10% by weight of As. The fourth layer (5) may be formed from an organic semiconductor Se only, or Se and up to 10% by weight of As. The conductive surface of the substrate (1) may be closest to the first layer (2) or to the fourth layer (5). This electrophotographic plate is sensitive to radiation with wavelengths longer than 700 nm and therefore permits the use of a semiconductor laser in an electrophotographic device. In making the plate, the substrate is maintained between 50°C and 80°C at least whilst the fourth layer (5) is formed, thereby to reduce the residual potential. All the layers are formed independently.

    摘要翻译： 电子照相平板由具有导电表面和四个连续层（2,3,4和5）的基底（1）组成，其中第三个是可选的。 第一层（2）由Se和3〜10重量％的As形成，第二层（3）由Se形成，40〜47重量％的Te和3〜10重量％的As。 第四层（5）可以仅由有机半导体Se或Se和至多10重量％的As形成。 衬底（1）的导电表面可以最靠近第一层（2）或第四层（5）。 该电子照相平板对波长长于700nm的辐射敏感，因此允许在电子照相装置中使用半导体激光器。 在制造板时，至少在形成第四层（5）的同时将基板保持在50℃至80℃之间，从而降低残余电位。 所有层均独立形成。

    Electrophotographic member and electrophotographic apparatus including the member
    30.
    发明公开
    Electrophotographic member and electrophotographic apparatus including the member 失效
    电子成像器和电子显示设备，包括会员

    公开(公告)号：EP0045204A3

    公开(公告)日：1982-02-24

    申请号：EP81303422

    申请日：1981-07-24

    申请人： Hitachi, Ltd.

    发明人： Ishioka, Sachio ,  Maruyama, Eiichi ,  Imamura, Yoshinori ,  Matsubara, Hirokazu ,  Horigome, Shinkichi

    IPC分类号： G03G05/082

    CPC分类号： G03G5/08235 ,  G03G5/144 ,  G03G5/14704

    摘要： An electrophotographic member has a support (1) and a photoconductor layer (2) on the support formed mainly of amorphous silicon. Improved characteristics of the layer (2) are obtained when the amorphous silicon contains on average at least 50 atomic-% silicon and at least 1 atomic-% hydrogen and a surface part (23, 25) at least 10 nm thick extending from a surface of the layer toward its interior has a hydrogen content of 1 to 40 atomic-% an optical forbidden band gap of 1.3 to 2.5 eV and an infrared absorption spectrum in which the intensity of at least one of the peaks centered approximately at wave numbers 2,200 cm -1 , 1,140 cm -1 , 1,040 cm -1 , 650 cm -1 , 860 cm- 1 and 800 cm -1 and attributed silicon-oxygen bonds does not exceed 20% of the intensity of the higher of the peaks centered at approximately wave numbers 2,000 cm-1 and 2,100 cm -1 and attributed silicon-hydrogen bonds. Dark decay characteristics are good, and a satisfactory surface potential can be achieved. In addition, the characteristics of the member are stable with time.