公开(公告)号：EP1020900A3

公开(公告)日：2000-09-20

申请号：EP00100592.5

申请日：2000-01-12

申请人： Matsushita Electric Industrial Co., Ltd.

发明人： Yuki, Koichiro ,  Saitoh, Tohru ,  Kubo, Minoru ,  Ohnaka, Kiyoshi ,  Asai, Akira ,  Katayama, Koji

IPC分类号： H01L29/165 ,  H01L29/167 ,  H01L21/04 ,  H01L21/265

CPC分类号： H01L21/26506 ,  H01L21/2658 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/167

摘要： An Si 1-y Ge y layer (where 0 1-y Ge y layers. Since C is contained in the Si layer, movement, diffusion and segregation of Ge atoms in the Si 1-y Ge y layer can be suppressed. As a result, the Si/Si 1-y Ge y interface can have its structural disorder eased and can be kept definite and planar. Thus, the mobility of carriers moving along the interface in the channel can be increased. That is to say, the thermal budget of the semiconductor device during annealing can be improved. Also, by grading the concentration profile of C, the diffusion of C into the gate insulating film can be suppressed and decline in reliability can be prevented.

摘要翻译： 在半导体衬底上依次形成Si 1-yGey层（其中0

公开(公告)号：EP0926260A2

公开(公告)日：1999-06-30

申请号：EP98123279.6

申请日：1998-12-07

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人： Morita, Kiyoyuki ,  Morimoto, Kiyoshi ,  Araki, Kiyoshi ,  Yuki, Koichiro ,  Adachi, Kazuyasu ,  Endo, Masayuki ,  Yamashita, Ichiro

IPC分类号： C23C18/00 ,  H01L21/28 ,  H01L21/288

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C11/5664 ,  G11C11/5671 ,  G11C13/0019 ,  G11C2216/08 ,  H01L21/28273 ,  H01L21/288 ,  H01L21/768 ,  H01L29/7883 ,  Y10S438/962

摘要： A Rat IgG antibody film, formed on a p-type Si substrate, is selectively irradiated with ultraviolet rays, thereby leaving part of the Rat IgG antibody film, except for a region deactivated with the ultraviolet rays. Next, when the p-type Si substrate is immersed in a solution containing Au fine particles that have been combined with a Rat IgG antigen, the Rat IgG antigen is selectively combined with the Rat IgG antibody film. As a result, Au fine particles, combined with the Rat IgG antigen, are fixed on the Rat IgG antibody film. Thereafter, the p-type Si substrate is placed within oxygen plasma for 20 minutes, thereby removing the Rat IgG antibody film, the deactivated Rat IgG antibody film and the Rat IgG antigen. Consequently, dot elements can be formed at desired positions on the p-type Si substrate. If these dot elements are used for the floating gate of a semiconductor memory device, then the device has a structure suitable for miniaturization.

摘要翻译： 在p型Si衬底上形成的大鼠IgG抗体膜被紫外线选择性照射，除了用紫外线去活化的区域外，还剩下部分大鼠IgG抗体膜。 接下来，当将p型Si衬底浸入含有与大鼠IgG抗原组合的Au微粒的溶液中时，将大鼠IgG抗原与大鼠IgG抗体膜选择性组合。 结果，与大鼠IgG抗原组合的Au微粒固定在大鼠IgG抗体膜上。 此后，将p型Si衬底置于氧等离子体中20分钟，从而除去大鼠IgG抗体膜，失活的大鼠IgG抗体膜和大鼠IgG抗原。 因此，可以在p型Si衬底上的期望位置形成点元素。 如果这些点元件用于半导体存储器件的浮动栅极，则该器件具有适于小型化的结构。

公开(公告)号：EP0709895B1

公开(公告)日：1997-11-05

申请号：EP95119854.8

申请日：1993-07-02

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人： Okada, Kenji ,  Morimoto, Kiyoshi ,  Udagawa, Masaharu ,  Yuki, Koichiro ,  Niwa, Masaaki ,  Hirai, Yoshihiko ,  Yasui, Juro

IPC分类号： H01L29/775 ,  H01L21/334

CPC分类号： B82Y10/00 ,  B82Y30/00 ,  H01L29/1037 ,  H01L29/66931 ,  H01L29/772 ,  H01L29/882 ,  Y10S438/911 ,  Y10S438/962

公开(公告)号：EP0709895A3

公开(公告)日：1996-07-31

申请号：EP95119854.8

申请日：1993-07-02

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人： Okada, Kenji ,  Morimoto, Kiyoshi ,  Udagawa, Masaharu ,  Yuki, Koichiro ,  Niwa, Masaaki ,  Hirai, Yoshihiko ,  Yasui, Juro

IPC分类号： H01L29/73 ,  H01L29/76

CPC分类号： B82Y10/00 ,  B82Y30/00 ,  H01L29/1037 ,  H01L29/66931 ,  H01L29/772 ,  H01L29/882 ,  Y10S438/911 ,  Y10S438/962

摘要： A quantum effect device including a plate-like conductor part having a necking portion is disclosed. Such a quantum device comprises: a conductor substrate having a main face; and a plate-like conductor part having two side faces, said side faces being perpendicular to said main face of said conductor substrate, said side faces being parallel to each other, wherein said plate-like conductor part includes a necking portion having a width smaller than a distance between said two side faces, and energy states of electrons in said necking portion are quantized in a direction perpendicular to said two side faces.

公开(公告)号：EP0598230A2

公开(公告)日：1994-05-25

申请号：EP93116812.4

申请日：1993-10-18

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人： Udagawa, Masaharu ,  Yasui, Juro ,  Niwa, Massaaki ,  Hirai, Yoshihiko ,  Okada, Kenji ,  Moimoto, Kiyoshi ,  Yuki, Koichiro

IPC分类号： H01L21/306

CPC分类号： H01L21/02046

摘要： For removing an unnecessary substance on a silicon substrate surface, a temperature of the unnecessary substance on the silicon substrate surface is not less than 750°C when the unnecessary substance is exposed to a gas including ozone.

摘要翻译： 为了除去硅衬底表面上的不需要的物质，当不需要的物质暴露于包括臭氧的气体时，硅衬底表面上的不必要物质的温度不低于750℃。

公开(公告)号：EP0577137A1

公开(公告)日：1994-01-05

申请号：EP93110609.0

申请日：1993-07-02

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人： Okada, Kenji ,  Morimoto, Kiyoshi ,  Udagawa, Masaharu ,  Yuki, Koichiro ,  Niwa, Masaaki ,  Hirai, Yoshihiko ,  Yasui, Juro

IPC分类号： H01L21/334

CPC分类号： B82Y10/00 ,  B82Y30/00 ,  H01L29/1037 ,  H01L29/66931 ,  H01L29/772 ,  H01L29/882 ,  Y10S438/911 ,  Y10S438/962

摘要： A quantum device including a plate-like conductor part having a necking portion and a method of producing the same are disclosed. The method includes the steps of forming a first mask layer having a first strip portion on a conductor substrate; forming a second mask layer having a second strip portion on the conductor substrate; etching a region of the conductor substrate which is not covered with the first and second mask layers, by using the first and second mask layers as an etching mask, to form a plurality of first recess portions on a surface of the conductor substrate; selectively covering side faces of the plurality of first recess portions, and side faces of the first and second mask layers with a side wall film; selectively removing only the second mask layer, the first mask layer and the side wall film being left unremoved; etching another region of the conductor substrate which is not covered with the first mask layer and the side wall film, by using the first mask layer and the side wall film as an etching mask, to form a plurality of second recess portions on the surface of the conductor substrate; selectively removing part of another region of the surface of the conductor substrate which is not covered with the first mask layer and the side wall film; and removing the first mask layer and the side wall film, to form the plate-like conductor part having the necking portion at the conductor substrate.

摘要翻译： 公开了一种包括具有颈缩部的板状导体部的量子装置及其制造方法。 该方法包括以下步骤：在导体衬底上形成具有第一条带部分的第一掩模层; 在所述导体基板上形成具有第二带状部分的第二掩模层; 通过使用第一和第二掩模层作为蚀刻掩模蚀刻未被第一和第二掩模层覆盖的导体基板的区域，以在导体基板的表面上形成多个第一凹部; 选择性地覆盖多个第一凹部的侧面以及第一和第二掩模层的侧面，并具有侧壁膜; 仅选择性地除去第二掩模层，第一掩模层和侧壁膜不被除去; 通过使用第一掩模层和侧壁膜作为蚀刻掩模蚀刻未被第一掩模层和侧壁膜覆盖的导体基板的另一区域，以在第二掩模层和侧壁膜的表面上形成多个第二凹部 导体衬底; 选择性地去除未被第一掩模层和侧壁膜覆盖的导体基板的表面的另一区域的一部分; 并且去除第一掩模层和侧壁膜，以在导体基板上形成具有颈缩部分的板状导体部分。