Abstract:
A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed:
In Chemical Formula 1, each substituent is the same as defined in the detailed description.
Abstract:
ABSTRACT Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer between the first electrode and the second electrode, wherein the photoelectric conversion layer includes a p-type semiconductor, an n-type semiconductor, and an n-type dopant represented by Chemical Formula 1, and an image sensor and an electronic device including the same.
Definitions of Chemical Formula 1 are the same as defined in the detailed description.
Abstract:
A photoelectric conversion device (100) includes a first electrode (10) and a second electrode (20) facing each other, a photoelectric conversion layer (30) between the first electrode (10) and the second electrode (20) and configured to absorb light in at least one part of a wavelength spectrum of light and to convert it into an electric signal, and an organic auxiliary layer (40) between the first electrode (10) and the photoelectric conversion layer (30) and having a higher charge mobility than a charge mobility of the photoelectric conversion layer (30). An organic sensor may include the photoelectric conversion device. An electronic device may include the organic sensor.
Abstract:
An OLED panel for implementing biometric recognition influencing an aperture ratio of an OLED light emitter i includes a substrate, an OLED on the substrate, and a driver on the substrate. The OLED may emit visible light, and the driver may drive the OLED. The driver may include a visible light sensor configured to detect the visible light emitted by the OLED, and the visible light sensor may overlap the OLED in a direction that is substantially perpendicular to an upper surface of the substrate. The OLED panel may include a near infrared ray OLED that is configured to emit near infrared rays, and the driver may include a near infrared ray sensor configured to detect near infrared rays emitted by the near infrared ray OLED. The near infrared ray sensor may overlap the OLED in a direction that is substantially perpendicular to an upper surface of the substrate.
Abstract:
An image sensor may include an organic photo-detector configured to selectively detect a near infrared wavelength spectrum of light and photoelectrically convert the detected near infrared wavelength spectrum of light, and a photo-detector array on the organic photo-detector, the photo-detector array including a photo-detector configured to detect a limited wavelength spectrum of visible light and photoelectrically convert the limited wavelength spectrum of visible light. The image sensor may discharge charges photoelectrically converted by the photo-detector to a first floating diffusion node, and the image sensor may discharge charges photoelectrically converted by the organic photo-detector to a second floating diffusion node. An area of the first floating diffusion node may be greater than an area of the second floating diffusion node.
Abstract:
A squarylium compound has high transmittance in a visible wavelength spectrum of light and is configured to selectively absorb light in an infrared/near infrared wavelength spectrum of light.
Abstract:
An image sensor includes at least one first pixel configured to sense light in a visible light wavelength spectrum and a second pixel configured to sense light in an infrared light wavelength spectrum. The second pixel includes a first photoelectric device defined in the second pixel. The first photoelectric device includes an infrared light absorption layer between a first electrode and a second electrode and configured to selectively absorb light in an infrared spectrum. The second pixel may be configured to compensate the luminance sensitivity of the image sensor. The first and second pixels may be included in a unit pixel group. The image sensor may include an array of multiple unit pixel groups arranged in one or more rows and one or more columns.
Abstract:
A compound for an organic photoelectric device is represented by Chemical Formula 1, and an organic photoelectric device, an image sensor and an electronic device include the same.
Abstract:
Provided is a compound represented by Chemical Formula 1 and having a reorganization energy of the compound of less than about 0.163 eV and a maximum absorption wavelength value calculated by density functional theory (DFT) of less than or equal to about 495 nm, and photoelectric devices, light absorption sensors, sensor-embedded display panels, and electronic devices including the same.
In Chemical Formula 1, the definition of each substituent is as described in the specification.
Abstract:
A sensor-embedded display panel includes a light emitting element and a sensor which include separate portions of a first common auxiliary layer including a hole transport material and a second common auxiliary layer including an electron transport material. The sensor includes first and second semiconductor layers proximate to the first and second common auxiliary layers, respectively, and including a p-type semiconductor and a non-fullerene n-type semiconductor having a LUMO energy level deeper than that of the electron transport material, respectively. An insertion layer between the second semiconductor layer and the second common auxiliary layer includes a metal, a metal compound, or any combination thereof. A work function of the metal or a LUMO energy level of the metal compound is deeper or shallower than the LUMO energy level of the non-fullerene n-type semiconductor and the LUMO energy level of the electron transport material within less than about 1.3 eV, respectively.