公开(公告)号：EP2471111A1

公开(公告)日：2012-07-04

申请号：EP10762742.4

申请日：2010-08-23

申请人： Ecole Polytechnique ,  Centre National de la Recherche Scientifique

发明人： ROCA I CABARROCAS, Pere ,  MORENO, Mario

IPC分类号： H01L31/18 ,  C30B33/12 ,  C30B29/06

CPC分类号： C30B33/12 ,  C30B29/06 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： The invention relates to a method for cleaning the surface of a silicon substrate, said surface being covered by a layer of silicon oxide. According to the invention, the method includes: a step of a) exposing said surface to a radiofrequency plasma, generated from a fluorinated gas, for stripping the silicon oxide layer and for inducing the adsorption of fluorinated elements on the surface of the silicon substrate, said exposure being performed for a duration of 60 to 900 seconds, the power density generated using the plasma being 10 mW/cm
2 to 350 mW/cm
2 , the fluorinated gas pressure being 10 mTorrs to 200 mTorrs, and the silicon substrate temperature being lower than or equal to 300°C; and a step b) of exposing said surface including the fluorinated elements to a hydrogen radiofrequency plasma, in order to remove said fluorinated elements from the substrate surface, said exposure being performed for a duration of 5 to 120 seconds, the power density generated using the plasma being 10 mW/cm
2 to 350 mW/cm
2 , the hydrogen pressure being 10 mTorrs to 1 Torr, and the silicon substrate temperature being lower than or equal to 300°C.

公开(公告)号：EP2087502A1

公开(公告)日：2009-08-12

申请号：EP07819350.5

申请日：2007-10-26

申请人： Dow Corning Corporation ,  Ecole Polytechnique

发明人： ROCA I CABARROCAS, Pere ,  BULKIN, Pavel ,  DAINEKA, Dmitri ,  LEEMPOEL, Patrick ,  DESCAMPS, Pierre ,  KERVYN DE MEERENDRE, Thibault

IPC分类号： H01J37/32

CPC分类号： H01J37/32678 ,  C23C16/24 ,  C23C16/511 ,  H01J37/32192 ,  H05H1/46

摘要： An apparatus is described for depositing a film on a substrate from a plasma. The apparatus comprises an enclosure, a plurality of plasma generator elements disposed within the enclosure, and means, also within the enclosure, for supporting the substrate. Each plasma generator element comprises a microwave antenna having an end from which microwaves are emitted, a magnet disposed in the region of the said antenna end and defining therewith an electron cyclotron resonance region in which a plasma can be generated, and a gas entry element having an outlet for a film precursor gas or a plasma gas. The outlet is arranged to direct gas towards a film deposition area situated beyond the magnet, as considered from the microwave antenna, the outlet being located in, or above, the hot electron confinement envelope.

公开(公告)号：EP2080216A1

公开(公告)日：2009-07-22

申请号：EP07819352.1

申请日：2007-10-26

申请人： Dow Corning Corporation ,  Ecole Polytechnique

发明人： ROCA I CABARROCAS, Pere ,  BULKIN, Pavel ,  DAINEKA, Dmitri ,  LEEMPOEL, Patrick ,  DESCAMPS, Pierre ,  KERVYN DE MEERENDRE, Thibault

IPC分类号： H01J37/32

CPC分类号： C23C16/45523 ,  C23C16/24 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32678 ,  H01L31/03762 ,  H01L31/065 ,  H01L31/076 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A method is described of forming a film of an amorphous material on a substrate by deposition from a plasma. The substrate is placed in an enclosure, a film precursor gas is introduced into the enclosure, and unreacted and dissociated gas is extracted from the enclosure so as to provide a low pressure therein. Microwave energy is introduced into the gas within the enclosure to produce a plasma therein by distributed electron cyclotron resonance (DECR) and cause material to be deposited from the plasma on the substrate. The said flow rate of the film precursor gas is altered during the course of deposition of material, so as to cause the bandgap to vary over the thickness of the deposited material.

公开(公告)号：EP1774605A1

公开(公告)日：2007-04-18

申请号：EP05792198.3

申请日：2005-07-21

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ,  ECOLE POLYTECHNIQUE ,  Centre National de la Recherche Scientifique

发明人： FIRON, Muriel ,  DREVILLON, Bernard ,  FONCTCUBERTA I MORRAL, Anna ,  PALACIN, Serge ,  ROCA I CABARROCAS, Pere

IPC分类号： H01L51/00

CPC分类号： H01L51/4213 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/002 ,  H01L51/0036 ,  H01L51/0048 ,  H01L51/4266 ,  H01L2251/308 ,  Y02E10/549

摘要： The invention relates to a photoactive nanocomposite (3) comprising at least one pair of donor-acceptor semiconductor elements, wherein an element consists of a nanowires (7) doped with an sp3 structure and another element in embodied in the form of an organic compound (8). Said elements are carried by the substrate (1) of a device. A production method is also disclosed and consists, in a first embodiment, in picking, fonctionalising and solubilizing the grown nanowires in the organic element (8) and in depositing the mixture by coating on the device substrate. In the second embodiment, the nanowires (7) are formed on a growth substrate (5) which is embodied in the form of the device substrate. The organic element (8) is associated with the nanowires (7) in such a way that an active layer (3) is formed. The inventive photoactive nanocomposite makes it possible to produce a photovoltaic cell.