公开(公告)号：EP2332175B1

公开(公告)日：2015-08-26

申请号：EP09791983.1

申请日：2009-08-27

申请人： Vanguard Solar, Inc.

发明人： FLOOD, Dennis, J.

IPC分类号： H01L31/0352 ,  H01L31/0272 ,  H01L51/44 ,  H01L51/42 ,  B82Y15/00 ,  B82Y40/00 ,  H01L31/0264 ,  H01L31/0312

CPC分类号： H01L51/4266 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0312 ,  H01L31/0322 ,  H01L31/0352 ,  H01L31/03529 ,  Y02E10/541 ,  Y02E10/544 ,  Y02E10/549

公开(公告)号：EP2246917A2

公开(公告)日：2010-11-03

申请号：EP10160646.5

申请日：2010-04-21

申请人： Honeywell International Inc.

发明人： Zheng, Zhi ,  Tang, Huili ,  Wang, Marilyn ,  Zhao, Linan ,  Liu, Xuanbin

IPC分类号： H01L51/42

CPC分类号： H01L51/4266 ,  H01G9/2036 ,  H01L51/0036 ,  H01L51/4226 ,  H01L51/4233 ,  Y02E10/549

摘要： Photovoltaic cells (10) and methods for manufacturing photovoltaic cells (10). An example photovoltaic cell (10) may include an electron conductor (14), a hole conductor (22) and an active region (20) situated therebetween. The electron conductor (14) may include a nanowire array (16) and a sheath (18) disposed over the nanowire array (16). The nanowire array (16) may include a material having an electron mobility that is greater than the electron mobility of the sheath (18). The sheath (18) may have a density of states that is greater than the density of states of the nanowire array (16).

摘要翻译： 光伏电池（10）和制造太阳能电池的方法（10）。 示例性光伏电池（10）可以包括电子导体（14），空穴导体（22）和位于它们之间的有源区（20）。 电子导体（14）可以包括设置在纳米线阵列（16）上方的纳米线阵列（16）和护套（18）。 纳米线阵列（16）可以包括具有大于护套（18）的电子迁移率的电子迁移率的材料。 护套（18）可以具有大于纳米线阵列（16）的状态密度的状态密度。

公开(公告)号：EP2171763A2

公开(公告)日：2010-04-07

申请号：EP08781048.7

申请日：2008-06-26

申请人： Solarity, Inc.

发明人： FONASH, Stephen ,  NAM, Wook, Jun

IPC分类号： H01L31/04

CPC分类号： H01L31/0352 ,  B82Y20/00 ,  H01L31/022425 ,  H01L31/022433 ,  H01L31/1872 ,  H01L51/0037 ,  H01L51/4213 ,  H01L51/4266 ,  Y02E10/549 ,  Y02P70/521

摘要： Lateral collection photovoltaic (LCP) structures based on micro- and nano-collecting elements are used to collect photogenerated carriers, wherein the position of the collecting elements is determined by pattern transfer of an alternating depth trench pattern into a material to undergo solid phase crystallization: one depth corresponds to the elements of an electrode and the other depth corresponds to the elements of the counter-electrode. At least one of the metal electrode collecting elements can serve to enhance solid phase crystallization of the surrounding material in which the trenches were formed.

摘要翻译： 基于微米和纳米收集元件的横向收集光伏（LCP）结构被用于收集光生载流子，其中收集元件的位置通过将交替深度沟槽图案图案转移到进行固相结晶的材料中来确定： 一个深度对应于电极的元件，而另一个深度对应于对电极的元件。 至少一个金属电极收集元件可以用于增强其中形成沟槽的周围材料的固相结晶。

公开(公告)号：EP1805823A2

公开(公告)日：2007-07-11

申请号：EP05857948.3

申请日：2005-09-22

申请人： Nanosys, Inc.

发明人： PAN, Yaoling ,  LEON, Francisco, A. ,  STUMBO, David, P.

IPC分类号： H01L51/00

CPC分类号： H01L51/0545 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78681 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/0035 ,  H01L51/0037 ,  H01L51/0048 ,  H01L51/0049 ,  H01L51/0541 ,  H01L51/0566 ,  H01L51/4253 ,  H01L51/4266 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S977/762 ,  Y10S977/763 ,  Y10S977/764

摘要： The present invention is directed to thin film transistors using nanowires (or other nanostructures such as nanoribbons, nanotubes and the like) incorporated in and/or disposed proximal to conductive polymer layer(s), and production scalable methods to produce such transistors. In particular, a composite material comprising a conductive polymeric material such as polyaniline (PANI) or polypyrrole (PPY) and one or more nanowires incorporated therein is disclosed. Several nanowire-TFT fabrication methods are also provided which in one exemplary embodiment includes providing a device substrate; deposing a first conductive polymer material layer on the device substrate; defining one or more gate contact regions in the conductive polymer layer; deposing a plurality of nanowires over the conductive polymer layer at a sufficient density of nanowires to achieve an operational current level; deposing a second conductive polymer material layer on the plurality of nanowires; and forming source and drain contact regions in the second conductive polymer material layer to thereby provide electrical connectivity to the plurality of nanowires, whereby the nanowires form a channel having a length between respective ones on the source and drain regions.

公开(公告)号：EP2922891A1

公开(公告)日：2015-09-30

申请号：EP13808349.8

申请日：2013-11-26

申请人： Massachusetts Institute of Technology

发明人： PARK, Hyesung ,  CHANG, Sehoon ,  KONG, Jing ,  GRADECAK, Silvija

IPC分类号： C08G61/12 ,  H01L51/44 ,  H01L31/0224

CPC分类号： H01L31/022483 ,  B82Y10/00 ,  C08G61/126 ,  C08G2261/1412 ,  C08G2261/3223 ,  C08G2261/91 ,  H01L31/0296 ,  H01L31/0324 ,  H01L31/035218 ,  H01L31/035227 ,  H01L31/1884 ,  H01L33/40 ,  H01L51/0021 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0045 ,  H01L51/4233 ,  H01L51/4266 ,  H01L51/442 ,  H01L2031/0344 ,  H01L2251/305 ,  Y02E10/549 ,  Y02P70/521

摘要： A transparent electrode can include a graphene sheet on a substrate, a layer including a conductive polymer disposed over the graphene sheet, and a plurality of semiconducting nanowires, such as ZnO nanowires, disposed over the layer including the conductive polymer.

公开(公告)号：EP2441101B1

公开(公告)日：2015-09-09

申请号：EP10727791.5

申请日：2010-06-08

申请人： Isis Innovation Limited

发明人： SNAITH, Henry, J.

IPC分类号： H01L51/42

CPC分类号： H01L51/422 ,  H01L51/006 ,  H01L51/4266 ,  H01L2251/306 ,  Y02E10/549 ,  Y02P70/521

公开(公告)号：EP2227836B1

公开(公告)日：2013-09-18

申请号：EP07872075.2

申请日：2007-12-28

申请人： Université d'Aix-Marseille ,  Centre National de la Recherche Scientifique (CNRS)

发明人： ACKERMANN, Jörg ,  FAGES, Frédéric ,  MARTINI, Cyril

IPC分类号： H01L51/42 ,  H01L51/05

CPC分类号： H01L51/0068 ,  H01L51/0037 ,  H01L51/0076 ,  H01L51/0566 ,  H01L51/4233 ,  H01L51/4266 ,  H01L2251/308 ,  Y02E10/549

公开(公告)号：EP1897147A4

公开(公告)日：2010-08-18

申请号：EP06785060

申请日：2006-06-16

申请人： ILLUMINEX CORP

发明人： HABIB YOUSSEF ,  STEINBECK JOHN

IPC分类号： H01L31/0248

CPC分类号： H01L51/4213 ,  H01L27/301 ,  H01L27/304 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/4266 ,  H01L51/447 ,  Y02E10/549

公开(公告)号：EP2129463A2

公开(公告)日：2009-12-09

申请号：EP08710220.8

申请日：2008-02-20

申请人： Yissum Research Development Company of the Hebrew University of Jerusalem, Ltd.

发明人： BANIN, Uri ,  COSTI, Ronny

IPC分类号： B01J35/00 ,  H01L31/04 ,  C01B3/04 ,  H01G9/20

CPC分类号： H01G9/20 ,  B01J27/0573 ,  B01J35/004 ,  B82Y30/00 ,  C01B3/042 ,  C25B1/003 ,  H01B1/16 ,  H01L51/4266 ,  Y02E60/364 ,  Y02P20/135

摘要： The present invention discloses the development and use of hybrid metal-semiconductor nanoparticles for photocatalysis of a variety of chemical reactions such as redox reactions and water-splitting.

公开(公告)号：EP3319903A1

公开(公告)日：2018-05-16

申请号：EP16734571.9

申请日：2016-06-14

申请人： Technische Universität München

发明人： NILGES, Tom ,  PFISTER, Daniela ,  OTT, Claudia ,  SCHÄFER, Konrad ,  BAUMGARTNER, Maximilian ,  WEIHRICH, Richard

IPC分类号： C01B25/08 ,  C01G28/00 ,  C01G29/00 ,  C01G30/00

CPC分类号： C01G28/004 ,  B01J19/12 ,  B01J27/135 ,  B01J27/14 ,  B01J35/0013 ,  B01J35/004 ,  B01J37/04 ,  B01J2219/0892 ,  C01B25/08 ,  C01B25/088 ,  C01B25/10 ,  C01G28/002 ,  C01G29/006 ,  C01G30/002 ,  C01P2002/30 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2002/80 ,  C01P2002/82 ,  C01P2002/86 ,  C01P2002/88 ,  C01P2004/03 ,  C01P2004/16 ,  C01P2006/40 ,  H01L35/26 ,  H01L51/4266

摘要： Provided are compounds of the formula MA1-xMBxXA1-yXByQA1-zQBz, wherein MA and MB are selected from Si, Ge, Sn, and Pb, XA and XB are selected from F, Cl, Br and I, QA and QB are selected from P, As, Sb and Bi, and x, y and z are 0 to 0.5, as well as doped variants thereof, useful as semiconducting materials. Due a double helix structure formed by the constituting atoms, the compounds are particularly suitable to provide nano-materials, in particular nanowires, for diverse applications.