摘要:
An optical recording medium (1, 50) includes: a substrate (2, 22, 52) on which information is recorded as phase pits, and a polarization state varying (3, 23, 53) layer for rotating a polarization state of a light beam irradiated thereon in accordance with a temperature distribution caused by irradiation of the light beam. A device (10, 10A, 10B, 10C) for reproducing information recorded on the optical recording medium includes: light irradiation unit (11) for irradiating a read-out light beam to produce a light spot on the optical recording medium so that a light intensity of the light beam at a first portion of the light spot is higher than a predetermined level, separation unit (12) for separating a component of light beam having a predetermined polarization state from a light beam reflected by the optical recording medium, light receiving unit (17a, 17b, 17c) for receiving the light beam separated by said separation unit and generating read-out signal, and reproducing unit (18, 18a, 18b) for reproducing information recorded on the optical recording medium on the basis of the read-out signal.
摘要:
A magneto-optical recording medium has a recording layer whereon information is magneto-optically recorded. A readout layer is provided on the recording layer. The readout layer has a compensating temperature that is located between room temperature and the Curie temperature. In the readout layer, upon an application of a light beam, the in-plane magnetization occurs at room temperature and a transition from the in-plane magnetization to vertical magnetization occurs as the temperature of the irradiated area of the readout layer rises above a predetermined temperature. By employing this magneto-optical recording medium, with an application of a light beam that is intensity modulated into two levels, only a spot having a temperature not less than a predetermined temperature is involved in the reproduction; therefore, a recorded bit with a size smaller than the diameter of the light beam can be reproduced, thereby greatly increasing the recording density. Further, the level of the reproduced signals is increased, and crosstalk from the adjoining tracks is reduced; thus, information recording and overwriting can be conducted more easily.
摘要:
Verfahren zur Herstellung einer dünnen röntgenamorphen Aluminiumnitrid- oder Aluminiumsiliciumnitrid-Schicht auf einer Oberfläche durch reaktive Kathodenzerstäubung oder reaktive Magnetronkathodenzerstäubung von Aluminium oder von Aluminium und Silicium im Vakuum in einer Edelgas und Stickstoff enthaltenden Prozeßgasatmosphäre und durch Abscheiden der betreffenden Nitridschicht aus der Gasphase, bei welchem man (a) als Edelgas Xenon, Neon oder Krypton oder alternativ (b) ein Gemisch von Xenon mit Neon und/oder Krypton oder von Neon mit Krypton verwendet, wobei (c) das Volumenverhältnis des Edelgases (a) oder des Edelgasgemischs (b) zu Stickstoff bei 2:1 bis 10:1 liegt.
摘要:
Verfahren zur Herstellung einer dünnen röntgenamorphen Aluminiumnitrid- oder Aluminiumsiliciumnitridschicht auf einer Oberfläche durch reaktive Kathodenzerstäubung oder reaktive Magnetronkathodenzerstäubung von Aluminium oder von Aluminium und Silicium im Vakuum in einer Edelgas und Stickstoff enthaltenden Prozeßgasatmosphäre und durch Abscheiden der betreffenden Nitridschicht aus der Gasphase, bei welchem man (a) als Edelgas ein Gemisch aus Argon und einem oder mehreren der Edelgase Neon, Krypton oder Xenon verwendet, wobei (b) das Volumenverhältnis von Argon zu den anderen Edelgasen bei 2:1 bis 100:1 liegt und wobei (c) das Volumenverhältnis des Edelgasgemischs (a) zu Stickstoff bei 2:1 bis 10:1 liegt.
摘要:
Verfahren zur Herstellung einer dünnen röntgenamorphen Aluminiumnitrid- oder Aluminiumsiliciumnitrid-Schicht auf einer Oberfläche durch reaktive Kathodenzerstäubung oder reaktive Magnetronkathodenzerstäubung von Aluminium oder von Aluminium und Silicium im Vakuum in einer Edelgas und Stickstoff enthaltenden Prozeßgasatmosphäre und durch Abscheiden der betreffenden Nitridschicht aus der Gasphase, bei welchem man
(a) als Edelgas Xenon, Neon oder Krypton oder alternativ (b) ein Gemisch von Xenon mit Neon und/oder Krypton oder von Neon mit Krypton verwendet, wobei (c) das Volumenverhältnis des Edelgases (a) oder des Edelgasgemischs (b) zu Stickstoff bei 2:1 bis 10:1 liegt.
摘要:
A magneto-optic memory element includes a magneto-optic memory layer (16) mounted on a substrate (10) and sandwiched between a pair of transparent AlN dielectric layers (12, 14) which protect the memory layer (16) from oxygen and moisture. An alloy reflection film (18) is formed on one of the pair of transparent AlN dielectric layers in order to increase the apparent Kerr rotation angle produced by the magneto-optic memory element. The reflection film comprises aluminium and contains an element for preventing the formation of turbidity in the reflection layer, this element being palladium, platinum, or nickel.
摘要:
A magneto-optic memory element inctades a transparent substrate, a first transparent nitride film, a GdTbFe recording layer, a second transparent nitride film, and a reflection film formed in this order. The first transparent nitride film has an index of refraction higher than that of the second transparent nitride film. In a preferred form, the first transparent nitride film is a SiN film having the index of refraction of about 2.0, and the second transparent nitride film is an AIN film having the index of refraction of about 1.8 to 1.9.
摘要:
A magneto-optic memory element includes a GdTbFe recording layer (16) sandwiched between a pair of transparent AIN dielectric layers (12, 14). At least one of the pair of transparent AIN dielectric layers is extended to have a size larger than the GdTbFe recording layer so as to cover the periphery edge of the GdTbFe recording layer, thereby protecting the GdTbFe recording layer from the oxygen and moisture. An Al-Ni alloy reflection film (18) is formed on one of the pair of transparent AIN dielectric layers in order to increase the apparent Kerr rotation angle produced by the magneto-optic memory element.
摘要:
A magneto-optic memory element inctades a transparent substrate, a first transparent nitride film, a GdTbFe recording layer, a second transparent nitride film, and a reflection film formed in this order. The first transparent nitride film has an index of refraction higher than that of the second transparent nitride film. In a preferred form, the first transparent nitride film is a SiN film having the index of refraction of about 2.0, and the second transparent nitride film is an AIN film having the index of refraction of about 1.8 to 1.9.