公开(公告)号：EP1476877A1

公开(公告)日：2004-11-17

申请号：EP03742713.5

申请日：2003-02-10

申请人： MICRON TECHNOLOGY, INC.

发明人： CASPER, Stephen, L. ,  DUESMAN, Kevin, G. ,  HUSH, Glen

IPC分类号： G11C11/34 ,  H01L45/00

CPC分类号： G11C13/0069 ,  G11C13/0004 ,  G11C13/0011 ,  G11C13/004 ,  G11C2013/0042 ,  G11C2013/0054 ,  G11C2013/009 ,  G11C2213/79

摘要： A sense circuit for reading a resistance level of a programmable conductor random access memory (PCRAM) cell is provided. A voltage potential difference is introduced across a PCRAM cell by activating an access transistor from a raised rowline voltage. Both a digit line and a digit complement reference line are precharged to a first predetermined voltage. The cell being sensed has the precharged voltage discharged through the resistance of the programmable conductor memory element of the PCRAM cell. A comparison is made of the voltage read at the digit line and at the reference conductor. If the voltage at the digit line is greater than the reference voltage, the cell is read as a high resistance value (e.g., logic HIGH); however, if the voltage measured at the digit line is lower than that of the reference voltage, the cell is read as a low resistance value (e.g., logic LOW).

公开(公告)号：EP1454325A2

公开(公告)日：2004-09-08

申请号：EP02789771.9

申请日：2002-11-20

申请人： MICRON TECHNOLOGY, INC.

发明人： HUSH, Glen ,  BAKER, Jake

IPC分类号： G11C11/34

CPC分类号： G11C13/0011 ,  G11C7/062 ,  G11C11/16 ,  G11C13/004 ,  G11C2013/0042 ,  G11C2213/79

摘要： A method and apparatus is disclosed for sensing the resistance state of a Programmable Conductor Random Access Memory (PCRAM) element using complementary PCRAM elements, one holding the resistance state being sensed and the other holding a complementary resistance state. A sense amplifier detects voltages discharging through the high and low resistance elements to determine the resistance state of an element being read.