Apparatus and method for optical assay imaging
    21.
    发明公开
    Apparatus and method for optical assay imaging 失效
    用于光学测量成像的装置和方法

    公开(公告)号:EP0217619A3

    公开(公告)日:1989-01-25

    申请号:EP86307299.7

    申请日:1986-09-23

    摘要: Apparatus and methods for optically assaying an analyte borne on a support use a light source (24) to irradiate a sample of analyte (26), a light from which is received by a group of memory cells in a dynamic RAM (28) over a given exposure time. The exposure may be repeated over different exposure times. The characteristic of the analyte to be determined is assayed by measurement of the states of the memory cells after such exposure(s).

    摘要翻译: 用于光学测定载体上载体的分析物的装置和方法使用光源(24)来照射被分析物样品(26),该分析物的样品被动态RAM(28)中的一组存储器单元接收, 给定曝光时间。 可能会在不同的曝光时间重复曝光。 待测定的分析物的特征是通过测量这种暴露后的记忆细胞的状态来测定的。

    Information holding device
    22.
    发明公开
    Information holding device 失效
    Informationshalteschaltung。

    公开(公告)号:EP0117535A2

    公开(公告)日:1984-09-05

    申请号:EP84101914.4

    申请日:1984-02-23

    申请人: HITACHI, LTD.

    IPC分类号: G11C11/24 G11C11/42

    CPC分类号: G11C13/047 G11C11/22

    摘要: An information holding device comprising a pair of substrates (26, 27) whose opposing surfaces are formed with one electrode (29) and the other electrode (30) so that they may oppose, a dielectric (31) which is held between said pair of substrates (26, 27), means (21) to change a capacitance of the dielectric (31) in the opposing part between said one electrode (29) and said other electrode (30), means (20) to apply a voltage varying with time to the dielectric of said opposing part, and means (23) to detect principally a displacement current flowing through the dielectric of said opposing part.

    Device for converting information from an electrical to an optical shape and vice versa
    23.
    发明公开
    Device for converting information from an electrical to an optical shape and vice versa 失效
    将电子信息转换为光学形状和VERSA的设备

    公开(公告)号:EP0062235A3

    公开(公告)日:1983-06-29

    申请号:EP82102442

    申请日:1982-03-24

    申请人: ASEA AB

    IPC分类号: G09G3/36 G02F1/133 G11C11/42

    CPC分类号: G11C11/42

    摘要: Die Erfindung betrifft eine Anordnung zur Umwandlung von Informationen aus der elektrischen Form in die optische Form (und umgekehrt), wobei die optische Informationsform eine in einer, zwei oder drei Richtungen zeitlich variierende Lichtintensität ist und wobei die Umwandlung der Informa tion aus der elektrischen in die optische Form durch opti sche Modulatoren, z. B. Flüssigkristalle, erfolgt und die Um wandlung aus der optischen Form in die elektrische Form durch Fotodetektoren erfolgt. Die optischen Modulatoren und die Fotodetektoren werden zeitlich von einem oder mehreren elektrooptisch rückgekoppelten Kreisen ge steuert oder abgetastet, in denen sich mindestens ein opti scher Modulator 2 im Strahlengang zwischen mindestens einer Lichtquelle 3, z. B. einer Leuchtdiode oder Laserdiode, und mindestens einem Fotodetektor 4, z. B. einem Fotowi derstand oder einer Fotodiode, befindet. Der Fotodetektor 4 ist in mindestens einen elektrischen Kreis 4, 5, 6 einge schaltet, an welchen der optische Modulator 2 derart ange schlossen ist, daß man über einen Rückkopplungskreis, dessen Verhalten - in Kreisrichtung gesehen - bestimmt wird durch die Lichttransmission des optischen Modulators 2, die elektrische Eigenschaft des Fotodetektors und das elektrische Eingangssignal des optischen Modulators 2, eine positive und negative Rückkopplung erhält. Die elek trooptisch rückgekoppelten Kreise können auch mehr als einen optischen Modulator und Fotodetektor enthalten, aus denen eine elektooptisch rückgekoppelte Kreuzschaltung aufgebaut wird.

    STORAGE DEVICE AND METHOD OF PRODUCING THE SAME

    公开(公告)号:EP4113520A1

    公开(公告)日:2023-01-04

    申请号:EP21183406.4

    申请日:2021-07-02

    申请人: NXP B.V.

    摘要: In accordance with a first aspect of the present disclosure, a storage device is provided, comprising: a capacitor configured to be charged; a charge circuit configured to charge said capacitor; a pass device coupled between the charge circuit and the capacitor; a control circuit configured to control said pass device; a photosensitive diode coupled between the control circuit and the pass device, such that an input voltage provided by the control circuit to the pass device is reduced if the storage device is exposed to light. In accordance with a second aspect of the present disclosure, a corresponding method of producing a storage device is conceived.

    EP0786137A4 -
    27.
    发明公开
    EP0786137A4 - 失效
    EP0786137A4 - Google专利

    公开(公告)号:EP0786137A4

    公开(公告)日:1997-07-30

    申请号:EP95926115

    申请日:1995-06-30

    摘要: An optical memory (100) in which data is stored in an optical data layer (190) capable of selectively altering light such as by changeable transmissivity. Data is organized into a plurality of regions or patches (called pages) in which each page contains a field of data spots storing binary data as the presence or absence of a hole. The data is illuminated by controllable light sources (150) and an array of single element diffractive imaging lenslets (210), one for each data page, projects the image onto a common array of light sensors (270).

    摘要翻译: 一种光学存储器(100),其中数据存储在光学数据层(190)中,光学数据层(190)能够选择性地改变光线,例如通过可改变的透射率。 数据被组织成多个区域或补丁(称为页面),其中每个页面包含存储二进制数据的数据点字段作为有无空洞。 数据由可控光源(150)和单个元件衍射成像小透镜(210)的阵列照射,每个数据页面一个,将图像投影到光传感器(270)的公共阵列上。

    All-optical flip-flop
    28.
    发明公开
    All-optical flip-flop 失效
    VollständigOptisches Flip-Flop。

    公开(公告)号:EP0658795A1

    公开(公告)日:1995-06-21

    申请号:EP94308904.5

    申请日:1994-12-01

    申请人: AT&T Corp.

    IPC分类号: G02F3/02 G11C11/42 H01S3/083

    摘要: An all-optical flip-flop device is achieved by employing two optical amplifiers (150,160) arranged so that they together operate in only one of two stable states at a given time. In a first stable state of operation, the first optical amplifier (150) behaves as a laser having a first predetermined characteristic wavelength. The arrangement is switched to a second stable state of operation in which the second optical amplifier (160) behaves as a laser having a second characteristic wavelength, where the first and second characteristic wavelengths are at least nominally different, when an optical signal pulse is received at the input (SET) of the first optical amplifier. The arrangement is switched back to the first stable state when an optical signal pulse is received at the input (RESET) of the second optical amplifier.

    摘要翻译: 全光学触发器装置通过采用两个光放大器(150,160)来实现,这两个光放大器(150,160)被布置成使得它们在给定时间内仅在两个稳定状态中的一个中工作。 在第一稳定状态下,第一光放大器(150)表现为具有第一预定特征波长的激光器。 当接收光信号脉冲时,该布置被切换到第二稳定运行状态,其中第二光放大器(160)表现为具有第二特征波长的激光,其中第一和第二特征波长至少在名义上不同 在第一光放大器的输入(SET)处。 当在第二光放大器的输入(RESET)处接收到光信号脉冲时,该布置被切换回第一稳定状态。

    Semiconductor optical memory device for optical storage of information with increased recording density
    29.
    发明公开
    Semiconductor optical memory device for optical storage of information with increased recording density 失效
    Optische Halbleiterspeicheranordnungfüroptische Datenspeicherung miterhöhterSpeicherdichte。

    公开(公告)号:EP0435779A2

    公开(公告)日:1991-07-03

    申请号:EP90403809.8

    申请日:1990-12-28

    申请人: FUJITSU LIMITED

    发明人: Muto, Shunichi

    摘要: A semiconductor optical memory device comprises a semiconductor layer (11) formed with a plurality of elemental recording areas (201 - 20n) each having a size generally equal to a wavelength of the optical beam, and a plurality of quantized regions (11c, 11e) formed in each elemental recording area of the semiconductor layer, wherein each of the quantized regions has a quantized energy level and absorbing an optical radiation of which wavelength is pertinent to the quantized energy level of that quantized region by forming first type carriers having a first polarity and second type carriers having a second, opposing polarity. Each of the quantized regions comprises a semiconductor material confined in at least two mutually perpendicular directions to form said quantized energy level and has the optical absorption wavelength that is different from that of other quantized regions included in each elemental recording area.

    摘要翻译: 半导体光学存储器件包括形成有多个元素记录区域(201〜20n)的半导体层(11),每个元件记录区域具有大致等于光束波长的尺寸,以及多个量化区域(11c,11e) 形成在所述半导体层的每个元素记录区域中,其中每个所述量化区域具有量化能级,并且通过形成具有第一极性的第一类型载流子吸收波长与所述量化区域的量化能级相关的光辐射 和具有第二相反极性的第二类型载体。 每个量化区域包括限制在至少两个相互垂直的方向上的半导体材料,以形成所述量化的能级,并且具有与包括在每个元素记录区域中的其它量化区域的光吸收波长不同的光吸收波长。