公开(公告)号：EP0429160A2

公开(公告)日：1991-05-29

申请号：EP90302340.6

申请日：1990-03-06

Applicant: SNK CORPORATION

Inventor： Hasegawa, Yoshihiko

IPC: G11C5/06 ,  G11C5/00 ,  A63F9/22

CPC classification number: A63F13/95 ,  A63F13/02 ,  A63F2300/206 ,  B82Y20/00 ,  G11C5/00 ,  G11C5/066 ,  G11C7/005 ,  G11C11/42 ,  G11C13/041 ,  H01L31/035236

Abstract: A memory cartridge for use with a TV game machine. It has a plurality of memories containing picture images such as game characters, messages and letters, a memory containing a sound program and a memory for synthesizing sound. The memories containing picture images have their data buses connected to a pin connector through a parallel-­serial converter circuit to reduce the number of pins forming the pin connector.

Abstract translation: 一种用于电视游戏机的存储盒。 它具有多个存储器，它们包含诸如游戏角色，消息和字母的图像，包含声音节目的存储器和用于合成声音的存储器。 包含图像的存储器的数据总线通过并行 - 串行转换器电路连接到引脚连接器，以减少形成引脚连接器的引脚数量。

公开(公告)号：EP0345494A2

公开(公告)日：1989-12-13

申请号：EP89108862.7

申请日：1989-05-17

Applicant: THE BOEING COMPANY

Inventor： Falk, Aaron R.

IPC: G11C7/00 ,  G11C13/04 ,  H01L31/0352 ,  G11C11/42

CPC classification number: G11C11/42 ,  G11C7/005 ,  H03K3/42

Abstract: A fully optical random access memory device is disclosed having an opto-electronic substrate. A write beam, having a wavelength within the absorption band of the opto-electronic substrate, and a read beam, having a wavelength outside the absorption band of the opto-­electronic substrate, are used to read and write information to the fully optical random access memory (26). The noninvasive optical reading of information provides a device capable of sub-nanosecond access times.

Abstract translation: 公开了具有光电子基板的全光学随机存取存储器件。 使用具有光电衬底的吸收带内的波长的写入光束和具有波长在光电子衬底的吸收带之外的波长的读取光束，以将信息读取和写入全光学随机存取 记忆（26）。 信息的无创光学读取提供了能够进行亚纳秒访问时间的设备。

公开(公告)号：EP0123435A2

公开(公告)日：1984-10-31

申请号：EP84301981.1

申请日：1984-03-23

Applicant: QMC Industrial Research Limited

Inventor： Wilson, Edward Guy ,  Bloor, David

IPC: G11C11/42

CPC classification number: G11C13/0014 ,  B82Y10/00 ,  B82Y30/00 ,  G11C11/42

Abstract: A memory comprises a multilayer film (1) in which each layer (2) is capable of carrying a charge, built up by successive deposition of a plurality of monomolecular layers (2), at least one of which has been deposited by a process of chemisorption and a photo-injector layer(D) is located on one side of the film for introducing charges into the film in a time sequence which corresponds to the information to be carried. Means (6) are provided for applying a voltage between the faces of the film to cause the charge carried by any layer to be transferred to the adjacent layer. The sequence of charges carried by the film may be read out by a photon-emitting electron arrival detector (F) on the opposite side ofthefilm, or by a method of current differentiation. The film (1) is preferably formed of a polydiacetylene.

Abstract translation: 存储器包括多层膜（1），其中每个层（2）能够承载电荷，通过连续沉积多个单分子层（2）建立，其中至少一个单分子层已经通过 化学吸附和光注入层（D）位于薄膜的一侧，用于按照与要传送的信息相对应的时间顺序将电荷引入薄膜。 提供手段（6）用于在膜的面之间施加电压，以使得由任何层携带的电荷被转移到相邻层。 薄膜携带的电荷序列可以通过薄膜另一侧的光子发射电子到达检测器（F）或通过电流分化方法读出。 膜（1）优选由聚二乙炔形成。

公开(公告)号：EP0435779A3

公开(公告)日：1991-10-30

申请号：EP90403809.8

申请日：1990-12-28

Applicant: FUJITSU LIMITED

Inventor： Muto, Shunichi

IPC: G11C13/04 ,  G11C7/00 ,  G11C11/42 ,  H01L31/0352 ,  G11B7/24

CPC classification number: B82Y20/00 ,  G11B7/0045 ,  G11B7/24 ,  G11C7/005 ,  G11C11/42 ,  G11C13/041 ,  H01L31/035236

Abstract: A semiconductor optical memory device comprises a semiconductor layer (11) formed with a plurality of elemental recording areas (201 - 20n) each having a size generally equal to a wavelength of the optical beam, and a plurality of quantized regions (11c, 11e) formed in each elemental recording area of the semiconductor layer, wherein each of the quantized regions has a quantized energy level and absorbing an optical radiation of which wavelength is pertinent to the quantized energy level of that quantized region by forming first type carriers having a first polarity and second type carriers having a second, opposing polarity. Each of the quantized regions comprises a semiconductor material confined in at least two mutually perpendicular directions to form said quantized energy level and has the optical absorption wavelength that is different from that of other quantized regions included in each elemental recording area.

公开(公告)号：EP0429160A3

公开(公告)日：1991-09-04

申请号：EP90302340.6

申请日：1990-03-06

Applicant: SNK CORPORATION

Inventor： Hasegawa, Yoshihiko

IPC: G11C5/06 ,  G11C5/00 ,  A63F9/22

CPC classification number: A63F13/95 ,  A63F13/02 ,  A63F2300/206 ,  B82Y20/00 ,  G11C5/00 ,  G11C5/066 ,  G11C7/005 ,  G11C11/42 ,  G11C13/041 ,  H01L31/035236

Abstract: A memory cartridge for use with a TV game machine. It has a plurality of memories containing picture images such as game characters, messages and letters, a memory containing a sound program and a memory for synthesizing sound. The memories containing picture images have their data buses connected to a pin connector through a parallel-­serial converter circuit to reduce the number of pins forming the pin connector.

公开(公告)号：EP0062235A3

公开(公告)日：1983-06-29

申请号：EP82102442

申请日：1982-03-24

Applicant: ASEA AB

Inventor： BROGARDH, TORGNY ,  OVREN, CHRISTER, DR. ING. ,  ADOLFSSON, MORGAN, DIPL.-ING.

IPC: G09G3/36 ,  G02F1/133 ,  G11C11/42

CPC classification number: G11C11/42

Abstract: Die Erfindung betrifft eine Anordnung zur Umwandlung von Informationen aus der elektrischen Form in die optische Form (und umgekehrt), wobei die optische Informationsform eine in einer, zwei oder drei Richtungen zeitlich variierende Lichtintensität ist und wobei die Umwandlung der Informa tion aus der elektrischen in die optische Form durch opti sche Modulatoren, z. B. Flüssigkristalle, erfolgt und die Um wandlung aus der optischen Form in die elektrische Form durch Fotodetektoren erfolgt. Die optischen Modulatoren und die Fotodetektoren werden zeitlich von einem oder mehreren elektrooptisch rückgekoppelten Kreisen ge steuert oder abgetastet, in denen sich mindestens ein opti scher Modulator 2 im Strahlengang zwischen mindestens einer Lichtquelle 3, z. B. einer Leuchtdiode oder Laserdiode, und mindestens einem Fotodetektor 4, z. B. einem Fotowi derstand oder einer Fotodiode, befindet. Der Fotodetektor 4 ist in mindestens einen elektrischen Kreis 4, 5, 6 einge schaltet, an welchen der optische Modulator 2 derart ange schlossen ist, daß man über einen Rückkopplungskreis, dessen Verhalten - in Kreisrichtung gesehen - bestimmt wird durch die Lichttransmission des optischen Modulators 2, die elektrische Eigenschaft des Fotodetektors und das elektrische Eingangssignal des optischen Modulators 2, eine positive und negative Rückkopplung erhält. Die elek trooptisch rückgekoppelten Kreise können auch mehr als einen optischen Modulator und Fotodetektor enthalten, aus denen eine elektooptisch rückgekoppelte Kreuzschaltung aufgebaut wird.

公开(公告)号：EP0024436A4

公开(公告)日：1982-04-22

申请号：EP80900438

申请日：1980-09-10

Applicant: KUZE YOSHIKAZU

Inventor： KUZE YOSHIKAZU

IPC: G11C17/00 ,  G05B19/05 ,  G05B19/12 ,  G11C11/42 ,  G11C16/02 ,  G11C16/10 ,  G11C7/00 ,  G06K19/00

CPC classification number: G11C11/42 ,  G05B19/124 ,  G11C16/102

公开(公告)号：EP3786658B1

公开(公告)日：2024-10-02

申请号：EP20189904.4

申请日：2020-08-06

IPC: G01R33/09 ,  G01R33/00 ,  G11B5/39 ,  G11C11/16 ,  H01F10/193 ,  H01F10/32

CPC classification number: G01R33/093 ,  G01R33/0052 ,  G01R33/1253 ,  H01F10/1936 ,  H01F10/325 ,  G11C11/18 ,  G11C11/1675 ,  G11C11/1659 ,  G11C19/0833 ,  G11C19/0841 ,  G11C11/161 ,  G11C11/42 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85

公开(公告)号：EP0658795A1

公开(公告)日：1995-06-21

申请号：EP94308904.5

申请日：1994-12-01

Applicant: AT&T Corp.

Inventor： Fatehi, Mohammad T. ,  Giles, Clinton Randy

IPC: G02F3/02 ,  G11C11/42 ,  H01S3/083

CPC classification number: G02F3/026 ,  G11C11/42 ,  H01S3/06754 ,  H01S3/083 ,  H01S5/32

Abstract: An all-optical flip-flop device is achieved by employing two optical amplifiers (150,160) arranged so that they together operate in only one of two stable states at a given time. In a first stable state of operation, the first optical amplifier (150) behaves as a laser having a first predetermined characteristic wavelength. The arrangement is switched to a second stable state of operation in which the second optical amplifier (160) behaves as a laser having a second characteristic wavelength, where the first and second characteristic wavelengths are at least nominally different, when an optical signal pulse is received at the input (SET) of the first optical amplifier. The arrangement is switched back to the first stable state when an optical signal pulse is received at the input (RESET) of the second optical amplifier.

Abstract translation: 全光学触发器装置通过采用两个光放大器（150,160）来实现，这两个光放大器（150,160）被布置成使得它们在给定时间内仅在两个稳定状态中的一个中工作。 在第一稳定状态下，第一光放大器（150）表现为具有第一预定特征波长的激光器。 当接收光信号脉冲时，该布置被切换到第二稳定运行状态，其中第二光放大器（160）表现为具有第二特征波长的激光，其中第一和第二特征波长至少在名义上不同 在第一光放大器的输入（SET）处。 当在第二光放大器的输入（RESET）处接收到光信号脉冲时，该布置被切换回第一稳定状态。

公开(公告)号：EP0435779A2

公开(公告)日：1991-07-03

申请号：EP90403809.8

申请日：1990-12-28

Applicant: FUJITSU LIMITED

Inventor： Muto, Shunichi

IPC: G11C13/04 ,  G11C7/00 ,  G11C11/42 ,  H01L31/0352 ,  G11B7/24

CPC classification number: B82Y20/00 ,  G11B7/0045 ,  G11B7/24 ,  G11C7/005 ,  G11C11/42 ,  G11C13/041 ,  H01L31/035236

Abstract: A semiconductor optical memory device comprises a semiconductor layer (11) formed with a plurality of elemental recording areas (201 - 20n) each having a size generally equal to a wavelength of the optical beam, and a plurality of quantized regions (11c, 11e) formed in each elemental recording area of the semiconductor layer, wherein each of the quantized regions has a quantized energy level and absorbing an optical radiation of which wavelength is pertinent to the quantized energy level of that quantized region by forming first type carriers having a first polarity and second type carriers having a second, opposing polarity. Each of the quantized regions comprises a semiconductor material confined in at least two mutually perpendicular directions to form said quantized energy level and has the optical absorption wavelength that is different from that of other quantized regions included in each elemental recording area.

Abstract translation: 半导体光学存储器件包括形成有多个元素记录区域（201〜20n）的半导体层（11），每个元件记录区域具有大致等于光束波长的尺寸，以及多个量化区域（11c，11e） 形成在所述半导体层的每个元素记录区域中，其中每个所述量化区域具有量化能级，并且通过形成具有第一极性的第一类型载流子吸收波长与所述量化区域的量化能级相关的光辐射 和具有第二相反极性的第二类型载体。 每个量化区域包括限制在至少两个相互垂直的方向上的半导体材料，以形成所述量化的能级，并且具有与包括在每个元素记录区域中的其它量化区域的光吸收波长不同的光吸收波长。