公开(公告)号：EP1205584B1

公开(公告)日：2004-09-29

申请号：EP01126620.2

申请日：2001-11-07

申请人： Denso Corporation

发明人： Hara, Kazukuni ,  Nagakubo, Masao ,  Onda, Shoichi

IPC分类号： C30B25/00 ,  C30B29/36

CPC分类号： C30B25/00 ,  C30B29/36 ,  Y10T117/1004

摘要： A crucible 30 has first member 31 and second cylindrical body 36, and is disposed in a lower chamber 2. The fist member 31 is disposed in the second cylindrical body 36 so as to define a gas flow path formed therebetween as a gap. A pedestal 33 is disposed inside the first member 31. A seed crystal 34 is fixed to the pedestal 33. SiC single crystals are formed on the pedestal 33 by introducing a mixture gas through an inlet conduit 50. During growth of the SiC single crystals, conductance in introduction of the mixture gas into the crucible 30 is larger than that in exhaust of the mixture gas, so that pressure of the mixture gas in the crucible 30 is larger than that of the mixture gas after exhausted from the crucible 30.

公开(公告)号：EP1119653B1

公开(公告)日：2004-03-31

申请号：EP99954798.7

申请日：1999-10-08

申请人： CREE, INC.

发明人： HUNTER, Charles, Eric

IPC分类号： C30B29/36 ,  C30B29/38 ,  C30B23/00 ,  C30B29/40 ,  C30B25/00

CPC分类号： C30B23/00 ,  C30B25/00 ,  C30B29/36 ,  C30B29/38 ,  C30B29/403

摘要： Simulated diamond gemstones are produced by faceting and polishing bulk single crystals of colorless synthetic aluminum nitride or aluminum nitride:silicon carbide alloys.

公开(公告)号：EP1375431A2

公开(公告)日：2004-01-02

申请号：EP03251320.2

申请日：2003-03-05

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Min, Yo-sep ,  Bae, Eun-ju ,  Choi, Won-bong ,  Cho, Young-jin ,  Lee, Jung-hyun

IPC分类号： C01G55/00 ,  C30B29/60 ,  C30B25/02

CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/08 ,  C01G55/00 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/13 ,  C01P2004/64 ,  C30B25/00 ,  C30B29/605 ,  Y10S977/893

摘要： A method of manufacturing an inorganic nanotube using a carbon nanotube (CNT) as a template is provided. The method includes preparing a template on which a CNT or a CNT array is formed; forming an inorganic thin film on the CNT by depositing an inorganic material on the template using atomic layer deposition (ALD); and removing the CNT to obtain an inorganic nanotube or an inorganic nanotube array.

摘要翻译： 提供了使用碳纳米管（CNT）作为模板来制造无机纳米管的方法。 该方法包括制备其上形成有CNT或CNT阵列的模板; 通过使用原子层沉积（ALD）在模板上沉积无机材料在CNT上形成无机薄膜; 并除去CNT以获得无机纳米管或无机纳米管阵列。

公开(公告)号：EP1144737B1

公开(公告)日：2003-01-15

申请号：EP99961511.5

申请日：1999-10-08

申请人： CREE, INC.

发明人： HUNTER, Charles, Eric

IPC分类号： C30B29/36 ,  C30B29/38 ,  C30B23/00

CPC分类号： C30B25/00 ,  C30B23/00 ,  C30B29/36 ,  C30B29/38

摘要： Low defect density, low impurity bulk single crystals of AlN, SiC and AlN:SiC alloy are produced by depositing appropriate vapor species of Al, Si, N, C on multiple nucleation sites that are preferentially cooled to a temperature less than the surrounding surfaces in the crystal growth enclosure. The vapor species may be provided by subliming solid source material, vaporizing liquid Al, Si or Al-Si or injecting source gases. The multiple nucleation sites may be unseeded or seeded with a seed crystal such as 4 H or 6 H SiC.

公开(公告)号：EP1249521A1

公开(公告)日：2002-10-16

申请号：EP00956968.2

申请日：2000-09-06

申请人： Sixon Inc. ,  THE KANSAI ELECTRIC POWER CO., INC. ,  MITSUBISHI CORPORATION ,  Sumitomo Electric Industries, Ltd.

发明人： SHIOMI, Hiromu ,  KIMOTO, Tsunenobu ,  MATSUNAMI, Hiroyuki

IPC分类号： C30B29/36 ,  H01L21/205

CPC分类号： C30B23/005 ,  C30B23/00 ,  C30B25/00 ,  C30B29/36

摘要： A method of growing an SiC single crystal, characterized in that an SiC single crystal 40 is grown on a seed crystal 30 comprised of an SiC single crystal in which a plane 30u, shifted with respect to the {0001} plane through an angle α (20° orientation, is within 15°, is exposed.

摘要翻译： 碳化硅单晶的生长包括在包含SiC单晶的晶种上生长SiC单晶，其角度α（α小于小于60度的20°）到{0001}表面，并且在 通过将法向量投影到{0001}表面和（11-20）方向上而获得的矢量的角度β= 15°。 对于通过该方法生长的碳化硅单晶，还包括独立权利要求。

公开(公告)号：EP1129238A2

公开(公告)日：2001-09-05

申请号：EP99954808.4

申请日：1999-10-08

申请人： CREE, INC.

发明人： HUNTER, Charles, Eric

IPC分类号： C30B1/00

CPC分类号： C30B23/00 ,  C30B25/00 ,  C30B29/36

摘要： Bulk, low impurity silicon carbide single crystals are grown by deposition of vapor species containing silicon and vapor species containing carbon on a crystal growth interface. The silicon source vapor is provided by vaporizing liquid silicon and transporting the silicon vapor to a crystal growth crucible. The carbon vapor species are provided by either a carbon containing source gas (for example, CN) or by flowing the silicon source vapor over or through a solid carbon source, for example flowing the silicon vapor through porous graphite or a bed of graphite particles.

公开(公告)号：EP1119653A2

公开(公告)日：2001-08-01

申请号：EP99954798.7

申请日：1999-10-08

申请人： CREE RESEARCH, INC.

发明人： HUNTER, Charles, Eric

IPC分类号： C30B29/36 ,  C30B29/38 ,  C30B23/00 ,  C30B29/40 ,  C30B25/00

CPC分类号： C30B23/00 ,  C30B25/00 ,  C30B29/36 ,  C30B29/38 ,  C30B29/403

摘要： Simulated diamond gemstones are produced by faceting and polishing bulk single crystals of colorless synthetic aluminum nitride or aluminum nitride:silicon carbide alloys.

公开(公告)号：EP0826800B1

公开(公告)日：2001-07-04

申请号：EP97306116.1

申请日：1997-08-12

申请人： Sumitomo Electric Industries, Ltd.

发明人： Hirota, Ryu ,  Fujiwara, Shinsuke

IPC分类号： C30B33/00 ,  C30B29/48 ,  C30B25/00

CPC分类号： C30B25/00 ,  C30B29/48 ,  C30B33/00 ,  C30B33/02 ,  Y10T117/1016

摘要： An object of the present invention is to provide a method for the heat-treatment of ZnSe crystal whereby a deterioration in crystallinity can be prevented and a crystal having a low resistivity, without the occurrence of precipitates, can be produced. The feature of the present invention comprises a method for the heat-treatment of a ZnSe crystal comprising subjecting a ZnSe crystal grown by a chemical vapor transport method, using iodine as a transport agent, to a heat-treatment in a Zn vapor atmosphere and controlling the cooling rate after the heat-treatment to in the range of from 10 to 200 DEG C/min.

公开(公告)号：EP1069206A2

公开(公告)日：2001-01-17

申请号：EP00305578.7

申请日：2000-07-03

申请人： LUCENT TECHNOLOGIES INC.

发明人： Moon Choi, Kyung ,  Jin, Sungho

IPC分类号： C23C16/26 ,  C23C16/00 ,  H01L23/49

CPC分类号： H01L24/10 ,  B82Y10/00 ,  B82Y30/00 ,  C30B25/00 ,  C30B29/605 ,  H01L21/288 ,  H01L21/76838 ,  H01L23/52 ,  H01L24/13 ,  H01L24/45 ,  H01L24/85 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/14 ,  Y10S977/72 ,  Y10S977/742 ,  Y10S977/745 ,  Y10S977/762 ,  Y10S977/843 ,  Y10S977/932 ,  H01L2224/48 ,  H01L2924/00

摘要： Nanoscale connectors particularly useful for connecting microscale devices comprise free-standing nanoscale conductors. The nanoscale conductors are conveniently fabricated in sets of controlled, preferably equal length by providing a removable substrate, growing conductive nanotubes or nanowires on the substrate, equalizing the length of the nanoscale conductors, and removing the substrate. Preferably the removable substrate is soluble, leaving a collection of free standing nanoscale connectors in suspension or solution.

摘要翻译： 特别适用于连接微型器件的纳米级连接器包括自立式纳米级导体。 通过提供可移除衬底，在衬底上生长导电纳米管或纳米线，均衡纳米导体的长度以及去除衬底，纳米级导体便利地以一组受控的，优选等长的方式制造。 优选地，可去除的基材是可溶的，留下独立的纳米级连接器在悬浮液或溶液中的集合。

公开(公告)号：EP0644277B1

公开(公告)日：1999-11-03

申请号：EP93910426.1

申请日：1993-06-01

申请人： Sumitomo Chemical Company, Limited

发明人： MOHRI, Masahide 277-4, Shimoyokoba ,  UCHIDA, Yoshio Katsuragi Ryou 204 ,  SAWABE, Yoshinari 550, Kitaohta ,  WATANABE, Hisashi Katsuragi Ryou 410

IPC分类号： C30B29/20 ,  C01F7/44 ,  C01F7/32

CPC分类号： C01F7/442 ,  C01F7/02 ,  C01P2004/03 ,  C01P2004/30 ,  C01P2004/40 ,  C01P2004/42 ,  C01P2004/52 ,  C01P2004/54 ,  C01P2004/60 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/80 ,  C30B25/00 ,  C30B29/20

摘要： A powdery alpha -alumina comprising single-crystal alpha -alumina grains which are homogeneous and free from any crystal seed inside, form an at least eight-sided polyhedron, and have a D to H ratio of 0.5 to 3.0 (wherein D is the maximum grain diameter in parallel with the hexagonal lattice plane of the alpha -alumina having a hexagonal closest lattice structure and H is the grain diameter perpendicular to the hexagonal lattice plane thereof), a number-average grain diameter of 0.1 to 5 mu m and a narrow grain size distribution. The powdery alpha -alumina of the invention comprises single-crystal alpha -alumina grains which are nearly spherical, fine and structurally homogeneous and have a narrow grain size distribution, and is suitable as the raw materials of abrasive, sinter, plasma spraying material, filler, single crystal, catalyst support, phosphor, sealing material and ceramic filter, in particular, as the raw materials of precision abrasive, sinter and ceramic filter, thus being remarkably useful from the industrial viewpoint.